HGTP15N40E1

HGTP15N40E1
Mfr. #:
HGTP15N40E1
Fabricante:
Rochester Electronics, LLC
Descripción:
Insulated Gate Bipolar Transistor, 15A I(C), 400V V(BR)CES, N-Channel, TO-220AB
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
HGTP15N40E1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
HGTP15, HGTP1, HGTP, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***or
15A, 400V, N-CHANNEL IGBT
Parte # Mfg. Descripción Valores Precio
HGTP15N40E1Harris SemiconductorInsulated Gate Bipolar Transistor, 15A I(C), 400V V(BR)CES, N-Channel, TO-220AB
RoHS: Not Compliant
488
  • 1000:$1.5100
  • 500:$1.5900
  • 100:$1.6600
  • 25:$1.7300
  • 1:$1.8600
Imagen Parte # Descripción
HGTP12N60C3D

Mfr.#: HGTP12N60C3D

OMO.#: OMO-HGTP12N60C3D

IGBT Transistors HGTP12N60C3D
HGTP12N60C3D

Mfr.#: HGTP12N60C3D

OMO.#: OMO-HGTP12N60C3D-ON-SEMICONDUCTOR

IGBT Transistors HGTP12N60C3D
HGTP10N40C1

Mfr.#: HGTP10N40C1

OMO.#: OMO-HGTP10N40C1-1190

Insulated Gate Bipolar Transistor, 10A I(C), 400V V(BR)CES, N-Channel, TO-220AB
HGTP10N40C1D

Mfr.#: HGTP10N40C1D

OMO.#: OMO-HGTP10N40C1D-1190

Insulated Gate Bipolar Transistor, 17.5A I(C), 400V V(BR)CES, N-Channel, TO-220AB
HGTP10N50E1

Mfr.#: HGTP10N50E1

OMO.#: OMO-HGTP10N50E1-1190

Insulated Gate Bipolar Transistor, 10A I(C), 500V V(BR)CES, N-Channel, TO-220AB
HGTP12N60A4

Mfr.#: HGTP12N60A4

OMO.#: OMO-HGTP12N60A4-ON-SEMICONDUCTOR

IGBT 600V 54A 167W TO220AB
HGTP12N60C3DR

Mfr.#: HGTP12N60C3DR

OMO.#: OMO-HGTP12N60C3DR-1190

Nuevo y original
HGTP15N50C1

Mfr.#: HGTP15N50C1

OMO.#: OMO-HGTP15N50C1-1190

Insulated Gate Bipolar Transistor, 15A I(C), 500V V(BR)CES, N-Channel, TO-220AB
HGTP1N120BND

Mfr.#: HGTP1N120BND

OMO.#: OMO-HGTP1N120BND-1190

Nuevo y original
HGTP1N120CN

Mfr.#: HGTP1N120CN

OMO.#: OMO-HGTP1N120CN-1190

Nuevo y original
Disponibilidad
Valores:
Available
En orden:
5000
Ingrese la cantidad:
El precio actual de HGTP15N40E1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,00 US$
0,00 US$
10
0,00 US$
0,00 US$
100
0,00 US$
0,00 US$
500
0,00 US$
0,00 US$
1000
0,00 US$
0,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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