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IXFH4N100Q

IXFH4N100Q
Mfr. #:
IXFH4N100Q
Fabricante:
Littelfuse
Descripción:
MOSFET 4 Amps 1000V 2.8 Rds
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFH4N100Q Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFH4N100Q DatasheetIXFH4N100Q Datasheet (P4)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
1 kV
Id - Corriente de drenaje continua:
4 A
Rds On - Resistencia de la fuente de drenaje:
3 Ohms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
150 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
HyperFET
Embalaje:
Tubo
Altura:
21.46 mm
Longitud:
16.26 mm
Serie:
IXFH4N100
Tipo de transistor:
1 N-Channel
Ancho:
5.3 mm
Marca:
IXYS
Otoño:
18 ns
Tipo de producto:
MOSFET
Hora de levantarse:
15 ns
Cantidad de paquete de fábrica:
30
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
32 ns
Tiempo típico de retardo de encendido:
17 ns
Unidad de peso:
0.229281 oz
Tags
IXFH4N100Q, IXFH4N, IXFH4, IXFH, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
MOSFET N-CH 1000V 4A TO-247AD
***el Nordic
Contact for details
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Trans MOSFET N-CH 1.05KV 4A 3-Pin(3+Tab) TO-247 Tube
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Trans MOSFET N-CH 1.05KV 6A 3-Pin(3+Tab) TO-247 Tube
***icroelectronics SCT
Power MOSFETs, 1050V, 6A, TO-247, Tube
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N-channel 850 V, 0.2 Ohm typ., 19 A MDmesh K5 Power MOSFET in a TO-247 package
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***ure Electronics
N-Channel 850 V 0.275 Ohm Flange Mount Power Mosfet - TO-247
***emi
N-Channel Power MOSFET, SUPERFET® II, 800 V, 58 A, 60 mΩ, TO-247
***r Electronics
Power Field-Effect Transistor, 58A I(D), 800V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***el Electronic
Aluminum Electrolytic Capacitors 680μF Radial, Can - SMD ±20% Tape & Reel (TR) FT 0.413 10.50mm Surface Mount Automotive, High Temperature Reflow CAP ALUM 680UF 20% 35V SMD
***nell
MOSFET, N CHANNEL, 800V, 58A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 58A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.054ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4
***rchild Semiconductor
SuperFET®II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology istailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Parte # Mfg. Descripción Valores Precio
IXFH4N100Q
DISTI # IXFH4N100Q-ND		IXYS CorporationMOSFET N-CH 1000V 4A TO-247AD
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$5.7810
IXFH4N100Q
DISTI # 747-IXFH4N100Q		IXYS CorporationMOSFET 4 Amps 1000V 2.8 Rds
RoHS: Compliant		0
  • 30:$7.0500
  • 60:$6.9100
  • 120:$6.6500
  • 270:$5.6800
  • 510:$5.3800
  • 1020:$4.5400
IXFH4N100Q
DISTI # XSFT00000027581		IXYS CorporationSINGLE N-CHANNEL 1000 V 150 W 82 NC THROUGH HOLEPOWER MOSFET - TO-247
RoHS: Compliant		660 in Stock0 on Order
  • 30:$6.6800
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Disponibilidad
Valores:
Available
En orden:
5500
Ingrese la cantidad:
El precio actual de IXFH4N100Q es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
30
7,05 US$
211,50 US$
60
6,91 US$
414,60 US$
120
6,65 US$
798,00 US$
270
5,68 US$
1 533,60 US$
510
5,38 US$
2 743,80 US$
1020
4,54 US$
4 630,80 US$
2520
3,89 US$
9 802,80 US$
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