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S25FL128SDPBHB303

S25FL128SDPBHB303
Mfr. #:
S25FL128SDPBHB303
Fabricante:
Cypress Semiconductor
Descripción:
NOR Flash IC 128 Mb FLASH MEMORY
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
S25FL128SDPBHB303 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
S25FL128SDPBHB303 más información S25FL128SDPBHB303 Product Details
Atributo del producto
Valor de atributo
Fabricante:
Semiconductor de ciprés
Categoria de producto:
NOR Flash
RoHS:
Y
Estilo de montaje:
SMD / SMT
Paquete / Caja:
BGA-24
Serie:
S25FL128S
Tamaño de la memoria:
128 Mbit
Frecuencia máxima de reloj:
66 MHz
Tipo de interfaz:
SPI
Organización:
16 M x 8
Tipo de tiempo:
Asincrónico
Ancho del bus de datos:
8 bit
Voltaje de suministro - Min:
2.7 V
Voltaje de suministro - Máx:
3.6 V
Corriente de suministro - Máx .:
100 mA
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 105 C
Calificación:
AEC-Q100
Embalaje:
Carrete
Velocidad:
66 MHz
Marca:
Semiconductor de ciprés
Sensible a la humedad:
Yes
Tipo de producto:
NOR Flash
Cantidad de paquete de fábrica:
2500
Subcategoría:
Memoria y almacenamiento de datos
Nombre comercial:
MirrorBit
Tags
S25FL128SDPBHB, S25FL128SDPB, S25FL128SDP, S25FL128SD, S25FL128S, S25FL128, S25FL12, S25FL1, S25FL, S25F, S25
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IC 128 MB FLASH MEMORY
S25FL128S NOR Flash Memory Devices
Cypress S25FL128S FL-S NOR is a 2.7V - 3.6V / 1.65V - 3.6V VIO Volt Flash Non-volatile Memory Device using 65nm MirrorBit technology. Designed using the Eclipse architecture with a Page Programming Buffer, the 128-Mb S25FL128S FL-S NOR allows users to program up to 128 words (256 bytes) in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via a Serial Peripheral Interface (SPI) and supports traditional SPI single bit serial input and output (Single I/O or SIO), optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. As part of the FL-S family, S25FL128S FL-S NOR provides support for Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL128S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. Cypress S25FL128S FL-S NOR is ideal for code shadowing, XIP, and data storage.
S25FL MirroBit Flash Non-Volatile Memory
Cypress S25FL128S / S25FL256S MirroBit® Flash Non-Volatile Memory devices employ MirrorBit technology that stores two data bits in each memory array transistor. These Cypress devices feature 65nm process lithography as well as Eclipse architecture that dramatically improves program and erase performance. S25FL128S and S25FL256S Flash Non-Volatile Memory devices offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.
S25FLxS FL-S NOR Flash Memory Devices
Cypress S25FLxS FL-S NOR Flash Memory Devices are 2.7V-3.6V or 1.65V-3.6V VIO Volt Flash Non-volatile Memory Devices. The S25FLxS FL-S NOR Flash Memory Devices use 65nm MirrorBit® technology. Featuring the Eclipse™ architecture with a Page Programming Buffer, 256-Mb S25FLxS FL-S NOR allows users to program up to 256-words. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The devices connect to a host system via an SPI and support traditional SPI single bit serial input and output.The S25FLxS FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO. The S25FLxS FL-S NOR transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands. The S25FLxS NOR instruction read transfer rate can match a traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FLxS FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. S25FLxS FL-S NOR memory devices are ideal for code shadowing, XIP, and data storage.
Parte # Mfg. Descripción Valores Precio
S25FL128SDPBHB303
DISTI # S25FL128SDPBHB303-ND		Cypress SemiconductorIC 128 MB FLASH MEMORY
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$2.9730
S25FL128SDPBHB303
DISTI # 47AC6072		Cypress SemiconductorS25FL128SDPBHB3030
  • 30000:$2.4000
  • 18000:$2.4400
  • 12000:$2.5400
  • 6000:$2.7300
  • 3000:$2.9300
  • 1:$3.0700
S25FL128SDPBHB303
DISTI # 727-S25FL128SDPHB303		Cypress SemiconductorNOR Flash IC 128 Mb FLASH MEMORY
RoHS: Compliant		0
  • 2500:$2.5900
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 Nuevo y original
Disponibilidad
Valores:
Available
En orden:
4000
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El precio actual de S25FL128SDPBHB303 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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