FQA170N06

FQA170N06
Mfr. #:
FQA170N06
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 60V N-Channel QFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FQA170N06 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-3PN-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
170 A
Rds On - Resistencia de la fuente de drenaje:
5.6 mOhms
Vgs - Voltaje puerta-fuente:
25 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
375 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
QFET
Embalaje:
Tubo
Altura:
20.1 mm
Longitud:
16.2 mm
Serie:
FQA170N06
Tipo de transistor:
1 N-Channel
Escribe:
MOSFET
Ancho:
5 mm
Marca:
ON Semiconductor / Fairchild
Transconductancia directa - Mín .:
85 S
Otoño:
430 ns
Tipo de producto:
MOSFET
Hora de levantarse:
700 ns
Cantidad de paquete de fábrica:
450
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
260 ns
Tiempo típico de retardo de encendido:
85 ns
Parte # Alias:
FQA170N06_NL
Unidad de peso:
0.225789 oz
Tags
FQA17, FQA1, FQA
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, QFET®, 60 V, 170 A, 5.6 mΩ, TO-3P
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:170A; On Resistance, Rds(on):0.0056ohm; Package/Case:D2-PAK; Power Dissipation, Pd:375W; Drain Source On Resistance @ 10V:0.0056ohm ;RoHS Compliant: No
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***ment14 APAC
MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:170A; Drain Source Voltage Vds:60V; On Resistance Rds(on):5.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:170A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:TO-3P; Power Dissipation Pd:375W; Power Dissipation Pd:375W; Power Dissipation Ptot Max:375W; Pulse Current Idm:680A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Parte # Mfg. Descripción Valores Precio
FQA170N06
DISTI # 33644134
ON SemiconductorTrans MOSFET N-CH 60V 170A 3-Pin(3+Tab) TO-3PN Rail1028
  • 4:$2.7994
FQA170N06
DISTI # FQA170N06-ND
ON SemiconductorMOSFET N-CH 60V 170A TO-3P
RoHS: Compliant
Min Qty: 1
Container: Tube
356In Stock
  • 2700:$3.3847
  • 900:$4.2245
  • 450:$4.7080
  • 25:$5.7260
  • 10:$6.0570
  • 1:$6.7400
FQA170N06
DISTI # V36:1790_06359808
ON SemiconductorTrans MOSFET N-CH 60V 170A 3-Pin(3+Tab) TO-3PN Rail0
  • 450000:$2.4550
  • 225000:$2.4610
  • 45000:$3.4390
  • 4500:$5.5620
  • 450:$5.9400
FQA170N06
DISTI # FQA170N06
ON SemiconductorTrans MOSFET N-CH 60V 170A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FQA170N06)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 4500:$5.3900
  • 2700:$5.4900
  • 1800:$5.5900
  • 450:$5.6900
  • 900:$5.6900
FQA170N06
DISTI # 58K8865
ON SemiconductorN CHANNEL MOSFET, 60V, 170A, TO-3PN,Transistor Polarity:N Channel,Continuous Drain Current Id:170A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0056ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes0
  • 5000:$3.7000
  • 2500:$4.0100
  • 1000:$4.1800
  • 500:$4.9400
  • 250:$5.4600
  • 100:$5.8900
  • 10:$7.2600
  • 1:$8.5000
FQA170N06
DISTI # 512-FQA170N06
ON SemiconductorMOSFET 60V N-Channel QFET
RoHS: Compliant
77
  • 1:$6.4100
  • 10:$5.4500
  • 100:$4.7200
  • 250:$4.4800
  • 500:$4.0200
  • 1000:$3.3900
FQA170N06
DISTI # 6714904P
ON SemiconductorMOSFET N-CHANNEL 60V 170A TO-3P(N), TU464
  • 10:£4.7600
FQA170N06
DISTI # XSKDRABV0037739
ON SEMICONDUCTOR 
RoHS: Compliant
360 in Stock0 on Order
  • 360:$3.9300
  • 119:$4.2100
FQA170N06
DISTI # 9845976
ON SemiconductorMOSFET, N, TO-3P0
  • 500:£3.1000
  • 250:£3.4500
  • 100:£3.6400
  • 10:£4.2000
  • 1:£5.4300
FQA170N06
DISTI # 9845976
ON SemiconductorMOSFET, N, TO-3P
RoHS: Compliant
0
  • 2500:$4.9500
  • 1000:$5.2200
  • 500:$6.1900
  • 250:$6.8900
  • 100:$7.2600
  • 10:$8.3800
  • 1:$9.8600
Imagen Parte # Descripción
860160672011

Mfr.#: 860160672011

OMO.#: OMO-860160672011-WURTH-ELECTRONICS

AL ELECTROLYTIC CAPACITORS 22UF 50V, PK
Disponibilidad
Valores:
77
En orden:
2060
Ingrese la cantidad:
El precio actual de FQA170N06 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
6,41 US$
6,41 US$
10
5,45 US$
54,50 US$
100
4,72 US$
472,00 US$
250
4,48 US$
1 120,00 US$
500
4,02 US$
2 010,00 US$
1000
3,39 US$
3 390,00 US$
2500
3,22 US$
8 050,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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