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BGA7H1BN6E6327XTSA1

BGA7H1BN6E6327XTSA1
Mfr. #:
BGA7H1BN6E6327XTSA1
Fabricante:
Infineon Technologies
Descripción:
RF Amplifier RF SILICON MMIC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BGA7H1BN6E6327XTSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
BGA7H1BN6E6327XTSA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Amplificador de RF
RoHS:
Y
Embalaje:
Carrete
Marca:
Infineon Technologies
Tipo de producto:
Amplificador de RF
Cantidad de paquete de fábrica:
15000
Subcategoría:
Circuitos integrados inalámbricos y RF
Parte # Alias:
7H1BN6 BGA E6327 SP001402778
Tags
BGA7H1B, BGA7H, BGA7, BGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
RF SILICON MMIC Low Noise Amplifier (LNA) > LTE / 3G LNAs
***ical
Low Noise Amplifier MMICs for mobile cellular systems: UMTS, HSPA/+ and LTE
***ineon
BGA7H1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 1805 MHz to 2690 Mhz and operates from1.5 V to 3.3 V supply voltage. The device features a single-line two-state control (Bypass- and High gain-Mode) and OFF-state can be enabled by powering down Vcc | Summary of Features: Insertion power gain: 12.3 dB; Low noise figure: 0.85 dB; Low current consumption: 4.3 mA; Insertion loss in bypass mode: -3.1 dB; Operating frequencies: 1805 - 2690 MHz; Two-state control: Bypass- and high gain-mode; Supply voltage: 1.5 V to 3.6 V; Digital on/off switch (1V logic high level); Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2); B7HF Silicon Germanium technology; RF output internally matched to 50 ; Only 1 external SMD component necessary; Pb-free (RoHS compliant) package | Target Applications: LNA for LTE reception in smart phones, feature phones, tablet PCs and RF front-end modules.
RF Solutions
Infineon RF Solutions provide RF products for numerous applications with high-performance, cost-effective devices. RF solutions include transistors, low-noise amplifiers, GPS/GLONASS/COMPASS LNA, switches, modules and tuners.
Parte # Mfg. Descripción Valores Precio
BGA7H1BN6E6327XTSA1
DISTI # BGA7H1BN6E6327XTSA1-ND		Infineon Technologies AGIC RF AMP LTE 1.805GHZ-2.69GHZ
RoHS: Compliant
Min Qty: 15000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 15000:$0.2145
BGA7H1BN6E6327XTSA1
DISTI # BGA7H1BN6E6327XTSA1		Infineon Technologies AGRF SILICON MMIC Low Noise Amplifier (LNA) > LTE / 3G LNAs - Tape and Reel (Alt: BGA7H1BN6E6327XTSA1)
RoHS: Compliant
Min Qty: 15000
Container: Reel		Americas - 0
  • 150000:$0.2089
  • 90000:$0.2129
  • 60000:$0.2199
  • 30000:$0.2289
  • 15000:$0.2369
BGA7H1BN6E6327XTSA1
DISTI # 726-BGA7H1BN6E6327XT		Infineon Technologies AGRF Amplifier RF SILICON MMIC
RoHS: Compliant		0
  • 1:$0.6200
  • 10:$0.5120
  • 100:$0.3300
  • 1000:$0.2640
  • 2500:$0.2230
  • 10000:$0.2150
  • 15000:$0.2070
Imagen Parte # Descripción
BGA7H1BN6E6327XTSA1

Mfr.#: BGA7H1BN6E6327XTSA1

OMO.#: OMO-BGA7H1BN6E6327XTSA1

 RF Amplifier RF SILICON MMIC
BGA7H1BN6E6327

Mfr.#: BGA7H1BN6E6327

OMO.#: OMO-BGA7H1BN6E6327-INFINEON-TECHNOLOGIES

 Nuevo y original
BGA7H1BN6E6327XTSA1INFIN

Mfr.#: BGA7H1BN6E6327XTSA1INFIN

OMO.#: OMO-BGA7H1BN6E6327XTSA1INFIN-INFINEON-TECHNOLOGIES

 Nuevo y original
BGA7H1BN6E6327XTSA1

Mfr.#: BGA7H1BN6E6327XTSA1

OMO.#: OMO-BGA7H1BN6E6327XTSA1-INFINEON-TECHNOLOGIES

 IC RF AMP LTE 1.805GHZ-2.69GHZ
Disponibilidad
Valores:
Available
En orden:
4500
Ingrese la cantidad:
El precio actual de BGA7H1BN6E6327XTSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,62 US$
0,62 US$
10
0,51 US$
5,12 US$
100
0,33 US$
33,00 US$
1000
0,26 US$
264,00 US$
2500
0,22 US$
557,50 US$
10000
0,22 US$
2 150,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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