SI1419DH-T1-E3

SI1419DH-T1-E3
Mfr. #:
SI1419DH-T1-E3
Fabricante:
Vishay
Descripción:
IGBT Transistors MOSFET 200V 0.38A 1.56W 5.0 ohms @ 10V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI1419DH-T1-E3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
VISHAY
categoria de producto
FET - Single
Tags
SI141, SI14, SI1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***eco
P-CH MOSFET SC-70-6 (SOT-363) 200V 5OHMS @ 10V
***i-Key
MOSFET P-CH 200V 0.3A SC70-6
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-380mA; Drain Source Voltage, Vds:-200V; On Resistance, Rds(on):5.1ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:-4.5V; Power Dissipation, Pd:1W ;RoHS Compliant: Yes
Parte # Mfg. Descripción Valores Precio
SI1419DH-T1-E3
DISTI # SI1419DH-T1-E3TR-ND
Vishay SiliconixMOSFET P-CH 200V 0.3A SC70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    SI1419DH-T1-E3
    DISTI # SI1419DH-T1-E3CT-ND
    Vishay SiliconixMOSFET P-CH 200V 0.3A SC70-6
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      SI1419DH-T1-E3
      DISTI # SI1419DH-T1-E3DKR-ND
      Vishay SiliconixMOSFET P-CH 200V 0.3A SC70-6
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        SI1419DH-T1-E3
        DISTI # 09X6420
        Vishay IntertechnologiesMOSFET, P CHANNEL, -200V, -0.3A, SOT-363-6,Transistor Polarity:P Channel,Continuous Drain Current Id:-300mA,Drain Source Voltage Vds:-200V,On Resistance Rds(on):3.98ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-4.5V RoHS Compliant: Yes0
          SI1419DH-T1-E3
          DISTI # 781-SI1419DH-T1-E3
          Vishay IntertechnologiesMOSFET 200V 0.38A 1.56W 5.0 ohms @ 10V
          RoHS: Compliant
          0
            SI1419DH-T1-E3Vishay Intertechnologies 1037
              Imagen Parte # Descripción
              SI1419DH-T1-E3

              Mfr.#: SI1419DH-T1-E3

              OMO.#: OMO-SI1419DH-T1-E3-VISHAY

              IGBT Transistors MOSFET 200V 0.38A 1.56W 5.0 ohms @ 10V
              Disponibilidad
              Valores:
              Available
              En orden:
              2000
              Ingrese la cantidad:
              El precio actual de SI1419DH-T1-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
              Precio de referencia (USD)
              Cantidad
              Precio unitario
              Ext. Precio
              1
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              10
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              100
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              500
              0,00 US$
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              1000
              0,00 US$
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              Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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