IPL65R725CFDAUMA1

IPL65R725CFDAUMA1
Mfr. #:
IPL65R725CFDAUMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 700V 5.8A VSON-5
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPL65R725CFDAUMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
VSON-4
Número de canales:
2 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
5.8 A
Rds On - Resistencia de la fuente de drenaje:
725 mOhms
Vgs th - Voltaje umbral puerta-fuente:
4 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
20 nC
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
62.5 W
Configuración:
Doble
Nombre comercial:
CoolMOS
Embalaje:
Carrete
Altura:
1.1 mm
Longitud:
8 mm
Serie:
CoolMOS CFDA
Tipo de transistor:
2 N-Channel
Ancho:
8 mm
Marca:
Infineon Technologies
Otoño:
10 ns
Tipo de producto:
MOSFET
Hora de levantarse:
8 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
40 ns
Tiempo típico de retardo de encendido:
9 ns
Parte # Alias:
IPL65R725CFD SP000949266
Tags
IPL65R, IPL65, IPL6, IPL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 650(Min)V 5.8A 4-Pin VSON T/R
***i-Key
MOSFET N-CH 4VSON
***ineon
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility
Parte # Mfg. Descripción Valores Precio
IPL65R725CFDAUMA1
DISTI # IPL65R725CFDAUMA1-ND
Infineon Technologies AGMOSFET N-CH 4VSON
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    IPL65R725CFDAUMA1
    DISTI # IPL65R725CFDAUMA1
    Infineon Technologies AGTrans MOSFET N-CH 650(Min)V 5.8A 4-Pin VSON T/R - Tape and Reel (Alt: IPL65R725CFDAUMA1)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
      Imagen Parte # Descripción
      IPL65R725CFDAUMA1

      Mfr.#: IPL65R725CFDAUMA1

      OMO.#: OMO-IPL65R725CFDAUMA1

      MOSFET N-Ch 700V 5.8A VSON-5
      IPL65R725CFD

      Mfr.#: IPL65R725CFD

      OMO.#: OMO-IPL65R725CFD-1190

      Nuevo y original
      IPL65R725CFDAUMA1

      Mfr.#: IPL65R725CFDAUMA1

      OMO.#: OMO-IPL65R725CFDAUMA1-INFINEON-TECHNOLOGIES

      MOSFET N-Ch 700V 5.8A VSON-5
      Disponibilidad
      Valores:
      Available
      En orden:
      1500
      Ingrese la cantidad:
      El precio actual de IPL65R725CFDAUMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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