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T1G4004532-FL

T1G4004532-FL
Mfr. #:
T1G4004532-FL
Fabricante:
Qorvo
Descripción:
RF JFET Transistors DC-35.GHz GaN 45w 32v Gain >19dB
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
T1G4004532-FL Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
T1G4004532-FL más información
Atributo del producto
Valor de atributo
Fabricante:
Qorvo
Categoria de producto:
Transistores RF JFET
RoHS:
Y
Tecnología:
GaN SiC
Vds - Voltaje de ruptura de drenaje-fuente:
32 V
Vgs - Voltaje de ruptura de puerta-fuente:
100 V
Pd - Disipación de energía:
45 W
Estilo de montaje:
SMD / SMT
Embalaje:
Bandeja
Configuración:
Único
Altura:
4.064 mm
Longitud:
20.3 mm
Ancho:
5.842 mm
Marca:
Qorvo
Voltaje de corte de puerta-fuente:
- 2.9 V
Sensible a la humedad:
Yes
Tipo de producto:
Transistores RF JFET
Cantidad de paquete de fábrica:
36
Subcategoría:
Transistores
Parte # Alias:
1092442
Tags
T1G4004, T1G400, T1G4, T1G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC to 3.5 GHz, 45 W, 19 dB, 32V, GaN
T1G4004532 GaN RF Power Transistors
Qorvo T1G4004532 GaN RF Power Transistors are 45W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5GHz. The device is constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Lead-free and ROHS compliant.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Parte # Mfg. Descripción Valores Precio
T1G4004532-FL
DISTI # 772-T1G4004532-FL		QorvoRF JFET Transistors DC-35.GHz GaN 45w 32v Gain >19dB
RoHS: Compliant		30
  • 1:$240.0000
  • 25:$216.6000
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Disponibilidad
Valores:
Available
En orden:
5500
Ingrese la cantidad:
El precio actual de T1G4004532-FL es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
240,00 US$
240,00 US$
25
216,60 US$
5 415,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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