FFSH20120ADN-F155

FFSH20120ADN-F155
Mfr. #:
FFSH20120ADN-F155
Fabricante:
ON Semiconductor / Fairchild
Descripción:
Schottky Diodes & Rectifiers 1200V SiC SBD 20A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FFSH20120ADN-F155 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FFSH20120ADN-F155 más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Diodos y rectificadores Schottky
RoHS:
Y
Producto:
Diodos de carburo de silicio Schottky
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Si - Corriente directa:
20 A
Vrrm - Voltaje inverso repetitivo:
1.2 kV
Vf - Voltaje directo:
1.45 V
Ifsm - Corriente de sobretensión directa:
96 A
Configuración:
Cátodo común
Tecnología:
Sic
Ir - Corriente inversa:
200 uA
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
FFSH20120A
Embalaje:
Tubo
Rango de temperatura de funcionamiento:
- 55 C to + 175 C
Estilo de terminación:
A través del orificio
Escribe:
Diodo Schottky de carburo de silicio
Marca:
ON Semiconductor / Fairchild
Pd - Disipación de energía:
150 W
Tipo de producto:
Diodos y rectificadores Schottky
Cantidad de paquete de fábrica:
450
Subcategoría:
Diodes & Rectifiers
Vr - Voltaje inverso:
1.2 kV
Parte # Alias:
FFSH20120ADN_F155
Unidad de peso:
0.225401 oz
Tags
FFSH20120ADN-F, FFSH20120AD, FFSH201, FFSH2, FFSH, FFS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
SiC Diode - 1200V, 20A, TO-247-3, Common Cathode
***ure Electronics
Schottky Diodes Rectifiers 1200V
***i-Key Marketplace
RECTIFIER DIODE, SCHOTTKY, 1 PHA
***rchild Semiconductor
SiC Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semiconductor material - Silicon Carbide, enables higher operating frequency, and helps increasing power density and reduction of system size/cost. Its high reliability ensures robust operation during surge or over-voltage conditions
FFSH SiC Schottky Diodes
ON Semiconductor FFSH Silicon Carbide (SiC) Schottky Diodes provide improved system efficiency and have a max junction temperature of 175ºC. These Schottky Diodes have no switching loss and a high surge current capacity. The diodes use Silicon Carbide semiconductor material for higher operating frequency, increasing power density and reduction of system size/cost. This ensures high reliability and robust operation during surge or over-voltage conditions.
1200V SiC Schottky Diodes
ON Semiconductor 1200V Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high-efficiency, fast operating frequency, high-power density, low EMI, and reduced system size and cost.
Wide Bandgap SiC Devices
ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.
Silicon Carbide Schottky Diodes
ON Semiconductor Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. SiC Schottky Diodes feature no reverse recovery current, temperature independent switching, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.  ON Semiconductor offers 650V and 1200V devices in a range of current and package options, ideal for next-generation power system designs.
Parte # Mfg. Descripción Valores Precio
FFSH20120ADN-F155
DISTI # V99:2348_16116317
ON SemiconductorSIC TO247 SBD 20A 1200V314
  • 25:$9.5750
  • 10:$10.4610
  • 1:$10.6510
FFSH20120ADN-F155
DISTI # FFSH20120ADN-F155-ND
ON SemiconductorDIODE SIC 1200V 10A TO247
RoHS: Compliant
Min Qty: 450
Container: Tube
Temporarily Out of Stock
  • 450:$8.1014
FFSH20120ADN-F155
DISTI # 29495569
ON SemiconductorSIC TO247 SBD 20A 1200V11250
  • 450:$9.2217
FFSH20120ADN-F155
DISTI # 25944270
ON SemiconductorSIC TO247 SBD 20A 1200V314
  • 1:$10.6510
FFSH20120ADN_F155
DISTI # FFSH20120ADN-F155
ON Semiconductor1200V SiC SBD 20A - Rail/Tube (Alt: FFSH20120ADN-F155)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 4500:$6.3900
  • 2700:$6.5900
  • 900:$6.6900
  • 1800:$6.6900
  • 450:$6.7900
FFSH20120ADN_F155
DISTI # FFSH20120ADN-F155
ON Semiconductor1200V SiC SBD 20A (Alt: FFSH20120ADN-F155)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€6.0900
  • 500:€6.5900
  • 100:€6.7900
  • 50:€7.0900
  • 25:€7.3900
  • 10:€7.6900
  • 1:€8.3900
FFSH20120ADN_F155
DISTI # FFSH20120ADN_F155
ON Semiconductor1200V SiC SBD 20A - Rail/Tube (Alt: FFSH20120ADN_F155)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
    FFSH20120ADN_F155
    DISTI # FFSH20120ADN-F155
    ON Semiconductor1200V SiC SBD 20A - Bulk (Alt: FFSH20120ADN-F155)
    Min Qty: 44
    Container: Bulk
    Americas - 0
    • 440:$7.0900
    • 220:$7.2900
    • 132:$7.3900
    • 44:$7.4900
    • 88:$7.4900
    FFSH20120ADN-F155
    DISTI # 48AC1062
    ON SemiconductorSIC TO247 SBD 20A 1200V / TUBE0
    • 500:$9.4600
    • 250:$10.0900
    • 100:$10.8200
    • 50:$11.7700
    • 1:$12.9200
    FFSH20120ADN-F155
    DISTI # 512-FFSH20120ADNF155
    ON SemiconductorSchottky Diodes & Rectifiers 1200V SiC SBD 20A
    RoHS: Compliant
    194
    • 1:$10.6700
    • 10:$9.8100
    • 25:$9.4100
    • 100:$8.2900
    • 250:$7.8800
    • 500:$7.3700
    FFSH20120ADN-F155Fairchild Semiconductor Corporation 
    RoHS: Not Compliant
    421
    • 1000:$7.6500
    • 500:$8.0500
    • 100:$8.3800
    • 25:$8.7400
    • 1:$9.4100
    Imagen Parte # Descripción
    UCC5390SCDR

    Mfr.#: UCC5390SCDR

    OMO.#: OMO-UCC5390SCDR

    Gate Drivers 10A/10A 3-kVRMS Sing ChanelIsolGateDriver
    UCC5350SBDR

    Mfr.#: UCC5350SBDR

    OMO.#: OMO-UCC5350SBDR

    Gate Drivers 5A/5A, 3-kVRMS Single-Channel
    IXFT170N25X3HV

    Mfr.#: IXFT170N25X3HV

    OMO.#: OMO-IXFT170N25X3HV

    MOSFET 250V/170A Ultra Junc tion X3-Class MOSFET
    DA-T268-401E-TR

    Mfr.#: DA-T268-401E-TR

    OMO.#: OMO-DA-T268-401E-TR

    Heat Sinks TO-268 SMD HEAT SINK ANODZD
    L1F3-U400200012000

    Mfr.#: L1F3-U400200012000

    OMO.#: OMO-L1F3-U400200012000

    High Power LEDs - Single Color UV/NUV
    DA-T268-401E-TR

    Mfr.#: DA-T268-401E-TR

    OMO.#: OMO-DA-T268-401E-TR-OHMITE

    TO-268 SMD HEAT SINK ANODZD
    WSHP2818R0100FEA

    Mfr.#: WSHP2818R0100FEA

    OMO.#: OMO-WSHP2818R0100FEA-VISHAY-DALE

    RES 0.01 OHM 1% 10W 2818
    MCKK2012TR47M

    Mfr.#: MCKK2012TR47M

    OMO.#: OMO-MCKK2012TR47M-TAIYO-YUDEN

    FIXED IND 470NH 4.5A 39 MOHM SMD
    IXFT170N25X3HV

    Mfr.#: IXFT170N25X3HV

    OMO.#: OMO-IXFT170N25X3HV-IXYS-CORPORATION

    MOSFET N-CH 250V 170A TO268HV
    SGNMNC3706EK

    Mfr.#: SGNMNC3706EK

    OMO.#: OMO-SGNMNC3706EK-SPRAGUE-GOODMAN

    Trimmer / Variable Capacitors Trimmer / Variable Capacitors 2-70pF 6000 Volts Hgh Vlt Non-Magnetic
    Disponibilidad
    Valores:
    194
    En orden:
    2177
    Ingrese la cantidad:
    El precio actual de FFSH20120ADN-F155 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    10,67 US$
    10,67 US$
    10
    9,81 US$
    98,10 US$
    25
    9,41 US$
    235,25 US$
    100
    8,29 US$
    829,00 US$
    250
    7,88 US$
    1 970,00 US$
    500
    7,37 US$
    3 685,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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