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SIHG17N60D-GE3

SIHG17N60D-GE3
Mfr. #:
SIHG17N60D-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 600V Vds 30V Vgs TO-247AC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHG17N60D-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHG17N60D-GE3 DatasheetSIHG17N60D-GE3 Datasheet (P4-P6)SIHG17N60D-GE3 Datasheet (P7-P8)
ECAD Model:
Más información:
SIHG17N60D-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247AC-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
17 A
Rds On - Resistencia de la fuente de drenaje:
340 mOhms
Vgs th - Voltaje umbral puerta-fuente:
5 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
45 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
277.8 W
Configuración:
Único
Embalaje:
A granel
Serie:
D
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
500
Subcategoría:
MOSFET
Parte # Alias:
SIHG17N60D-E3
Unidad de peso:
1.340411 oz
Tags
SIHG17, SIHG1, SIHG, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-247AC
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 17A I(D), 600V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***nell
MOSFET, N-CH, 600V, 17A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.275ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:277.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247AC; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
D-Series High Voltage Power MOSFETs
Vishay Siliconix's D-Series High Voltage Power MOSFETs are Vishay's next-generation high voltage N-Channel MOSFETs available in 400V, 500V and 600V ratings. These new devices combines low specific on-resistance with ultra-low gate charge, currents from 3.0A to 36A and are available in a wide range of packages. Features include Vishay's new high-voltage stripe technology, on-resistance down to 0.13Ω, gate charge down to 6nC, best-in-class gate charge times on-resistant figures of merit (FOM) down to 7.65 Ω-nC, and avalanche rated for reliable operation. Typical applications include high-power, high-performance switch mode applications, including server and telecom power systems, welding, plasma cutting, battery chargers, ballast light, high-intensity discharge (HID) lighting, semiconductor capital equipment, and induction heating.
Parte # Mfg. Descripción Valores Precio
SIHG17N60D-GE3
DISTI # 27549478		Vishay IntertechnologiesTrans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-247AC
RoHS: Compliant		85
  • 31:$2.5385
SIHG17N60D-GE3
DISTI # SIHG17N60D-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 17A TO247AC
RoHS: Compliant
Min Qty: 500
Container: Tube		Temporarily Out of Stock
  • 500:$2.4665
SIHG17N60D-GE3
DISTI # SIHG17N60D-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 17A 3-Pin TO-247AC (Alt: SIHG17N60D-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€1.3900
  • 50:€1.4900
  • 100:€1.4900
  • 500:€1.4900
  • 25:€1.6900
  • 10:€2.0900
  • 1:€2.5900
SIHG17N60D-GE3
DISTI # SIHG17N60D-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 17A 3-Pin TO-247AC - Tape and Reel (Alt: SIHG17N60D-GE3)
RoHS: Not Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 3000:$1.7900
  • 5000:$1.7900
  • 1000:$1.8900
  • 2000:$1.8900
  • 500:$1.9900
SIHG17N60D-GE3
DISTI # 62W0514		Vishay IntertechnologiesPower MOSFET, N Channel, 17 A, 600 V, 0.275 ohm, 10 V, 3 V RoHS Compliant: Yes85
  • 1:$1.6500
  • 10:$1.6500
  • 25:$1.6500
  • 50:$1.6500
  • 100:$1.6500
  • 500:$1.6500
  • 1000:$1.6500
  • 2500:$1.6500
SIHG17N60D-GE3
DISTI # 78-SIHG17N60D-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AC
RoHS: Compliant		277
  • 1:$3.9700
  • 10:$3.2900
  • 100:$2.7100
  • 250:$2.6200
  • 500:$2.3500
  • 1000:$1.9900
  • 2500:$1.8900
SIHG17N60DGE3Vishay IntertechnologiesPower Field-Effect Transistor, 17A I(D), 600V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
RoHS: Compliant		500
    SIHG17N60D-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AC
    RoHS: Compliant    		Americas -
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      Disponibilidad
      Valores:
      277
      En orden:
      2260
      Ingrese la cantidad:
      El precio actual de SIHG17N60D-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      3,97 US$
      3,97 US$
      10
      3,29 US$
      32,90 US$
      100
      2,71 US$
      271,00 US$
      250
      2,62 US$
      655,00 US$
      500
      2,35 US$
      1 175,00 US$
      1000
      1,99 US$
      1 990,00 US$
      2500
      1,89 US$
      4 725,00 US$
      5000
      1,82 US$
      9 100,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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