FQP34N20

Mfr. #:: FQP34N20
Fabricante:: ON Semiconductor / Fairchild
Descripción:: MOSFET 200V N-Channel QFET
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: FQP34N20 Ficha de datos
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Atributo del producto
Valor de atributo

Fabricante:: EN Semiconductor

Categoria de producto:: MOSFET

RoHS:: Y

Tecnología:: Si

Estilo de montaje:: A través del orificio

Paquete / Caja:: TO-220-3

Número de canales:: 1 Channel

Polaridad del transistor:: Canal N

Vds - Voltaje de ruptura de drenaje-fuente:: 200 V

Id - Corriente de drenaje continua:: 31 A

Rds On - Resistencia de la fuente de drenaje:: 75 mOhms

Vgs - Voltaje puerta-fuente:: 30 V

Temperatura mínima de funcionamiento:: - 55 C

Temperatura máxima de funcionamiento:: + 150 C

Pd - Disipación de energía:: 180 W

Configuración:: Único

Modo de canal:: Mejora

Nombre comercial:: QFET

Embalaje:: Tubo

Altura:: 16.3 mm

Longitud:: 10.67 mm

Serie:: FQP34N20

Tipo de transistor:: 1 N-Channel

Escribe:: MOSFET

Ancho:: 4.7 mm

Marca:: ON Semiconductor / Fairchild

Transconductancia directa - Mín .:: 25 S

Otoño:: 115 ns

Tipo de producto:: MOSFET

Hora de levantarse:: 280 ns

Cantidad de paquete de fábrica:: 1000

Subcategoría:: MOSFET

Tiempo de retardo de apagado típico:: 125 ns

Tiempo típico de retardo de encendido:: 40 ns

Unidad de peso:: 0.063493 oz

Tags: FQP34, FQP3, FQP

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FQP34N20 Descripción

***emi: Power MOSFET, N-Channel, QFET®, 200 V, 31 A, 75 mΩ, TO-220

***ure Electronics: Single N-Channel 200 V 0.075 Ohm 78 nC 180 W DMOS Flange Mount Mosfet - TO-220-3

***et: Trans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Rail

***r Electronics: Power Field-Effect Transistor, 31A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET,N CH,200V,31A,TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:200V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:180W; Operating Temperature Range:-55°C to +105°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:31A; Power Dissipation Pd:180W; Voltage Vgs Max:30V

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***emi: N-Channel Power MOSFET, UniFETTM, 200V, 39A, 66mΩ, TO-220F

***ure Electronics: FDPF39N20 Series 200 V 39 A 66 mOhm N-Ch UniFet Mosfet - TO-220-3FP

***Yang: Trans MOSFET N-CH 200V 39A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube

***enic: 200V 39A 37W 66m´Î@10V19.5A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS

***r Electronics: Power Field-Effect Transistor, 39A I(D), 200V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:200V; On Resistance Rds(on):66mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:37W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:39A; Package / Case:TO-220F; Power Dissipation Pd:37W; Pulse Current Idm:156A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V

***rchild Semiconductor: UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.082Ohm;ID 31A;TO-220AB;PD 200W;VGS +/-30V

***ure Electronics: Single N-Channel 200 V 0.082 Ohm 107 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***p One Stop: Trans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 200 W

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, 200V, 31A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:200V; On Resistance Rds(on):82mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:31A; Junction to Case Thermal Resistance A:0.75°C/W; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:124A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5.5V

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

***ure Electronics: Single N-Channel 150 V 56 mOhm 60 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 33A I(D), 150V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: N CH MOSFET, 150V, 33A, TO-220AB; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:150V; On Resistance Rds(on):56mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:170W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:33A; Junction to Case Thermal Resistance A:0.9°C/W; On State resistance @ Vgs = 10V:56ohm; Package / Case:TO-220AB; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:130A; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

***emi: N-Channel Power MOSFET, UniFETTM, 250 V, 33 A, 94 mΩ, TO-220

***Yang: Trans MOSFET N-CH 250V 33A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube

***ure Electronics: N-Channel 250 V 94 mOhm Flange Mount Mosfet - TO-220

*** Stop Electro: Power Field-Effect Transistor, 33A I(D), 250V, 0.094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:250V; Continuous Drain Current, Id:33A; On Resistance, Rds(on):0.094ohm; Rds(on) Test Voltage, Vgs:5V; Threshold Voltage, Vgs Typ:30V ;RoHS Compliant: Yes

***rchild Semiconductor: UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:250V; On Resistance Rds(on):94mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:235W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Capacitance Ciss Typ:1640pF; Current Id Max:33A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:0.53°C/W; On State Resistance Max:94mohm; On State Resistance Typ:77mohm; Package / Case:TO-220; Pin Configuration:G(1),D(2)S(3); Power Dissipation Pd:235W; Power Dissipation Pd:235W; Pulse Current Idm:132A; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V

*** Source Electronics: Trans MOSFET N-CH Si 200V 25A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 200V 25A TO-220AB

***ineon SCT: 200V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***ure Electronics: Single N-Channel 200 V 72.5 mOhm 25 nC HEXFET® Power Mosfet - TO-220-3

***ineon: Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Class D Audio; Consumer Full-Bridge; Full-Bridge; Push-Pull

***ment14 APAC: MOSFET, CLASS D, 200V, TO220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:200V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:25A; Package / Case:TO-220AB; Power Dissipation Pd:144W; Power Dissipation Pd:144W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V

***ure Electronics: Single N-Channel 150 V 0.146 Ohm 34 nC 135 W Flange Mount Mosfet - TO-220-3

***Yang: Trans MOSFET N-CH 150V 4A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube

***emi: N-Channel PowerTrench® MOSFET 150V, 29A, 54mΩ

***ter Electronics: TO-220AB, SINGLE, N-CH, 150V, 57MOHM ULTRAFET TRENCH MOSFET

***r Electronics: Power Field-Effect Transistor, 4A I(D), 150V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N CH 29A 150V, TO220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:150V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:29A; Package / Case:TO-220; Power Dissipation Pd:135W; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

Market price

Parte #	Mfg.	Descripción	Valores	Precio
FQP34N20 DISTI # 26637338	ON Semiconductor	SQ	1000	2000:$1.1000 1000:$1.2283
FQP34N20 DISTI # 9767400	ON Semiconductor	SQ	500	10000:$0.8601 6000:$0.8812 4000:$0.8927 2000:$0.9042 1000:$0.9109
FQP34N20 DISTI # FQP34N20-ND	ON Semiconductor	MOSFET N-CH 200V 31A TO-220 RoHS: Compliant Min Qty: 1 Container: Tube	870In Stock	1000:$1.3317 500:$1.6072 100:$2.0664 10:$2.5710 1:$2.8500
FQP34N20L DISTI # FQP34N20L-ND	ON Semiconductor	MOSFET N-CH 200V 31A TO-220 RoHS: Compliant Min Qty: 1000 Container: Tube	Limited Supply - Call
FQP34N20 DISTI # FQP34N20	ON Semiconductor	Trans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP34N20) RoHS: Compliant Min Qty: 1	Europe - 0	1:€1.5779 10:€1.2909 25:€1.1029 50:€1.0019 100:€0.9859 500:€0.9709 1000:€0.9559
FQP34N20 DISTI # FQP34N20	ON Semiconductor	Trans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP34N20) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$0.9069 1002:$0.9039 2002:$0.9009 5000:$0.8989 10000:$0.8959
FQP34N20 DISTI # 87X8793	ON Semiconductor	MOSFET Transistor, N Channel, 31 A, 200 V, 0.06 ohm, 10 V, 5 V RoHS Compliant: Yes	530	1:$2.1500 10:$1.8500 100:$1.4900 500:$1.3200 1000:$1.1000
FQP34N20. DISTI # 81AC8734	ON Semiconductor	QF 200V 75MOHM TO220	0	1:$0.9490 2000:$0.9420 4000:$0.9300 6000:$0.9180 10000:$0.8960
FQP34N20 DISTI # 512-FQP34N20	ON Semiconductor	MOSFET 200V N-Channel QFET RoHS: Compliant	433	1:$1.9900 10:$1.7000 100:$1.3600
FQP34N20L DISTI # 512-FQP34N20L	ON Semiconductor	MOSFET 200V N-Ch QFET Logic Level RoHS: Compliant	0
FQP34N20	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 31A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	13000	1000:$1.2500 500:$1.3200 100:$1.3700 25:$1.4300 1:$1.5400
FQP34N20 DISTI # 6715092	ON Semiconductor	MOSFET N-CHANNEL 200V 31A TO220AB, PK	805	5:£1.6880 25:£1.4100 100:£1.1100 250:£1.0720 500:£0.8040
FQP34N20 DISTI # 6715092P	ON Semiconductor	MOSFET N-CHANNEL 200V 31A TO220AB, TU	225	25:£1.4100 100:£1.1100 250:£1.0720 500:£0.8040
FQP34N20	Fairchild Semiconductor Corporation		1400
FQP34N20	ON Semiconductor	Power Field-Effect Transistor, 31A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	Europe - 650
FQP34N20 DISTI # 1839004	ON Semiconductor	MOSFET,N CH,200V,31A,TO-220 RoHS: Compliant	541	1:£1.7300 10:£1.3500 100:£1.0500 250:£0.9840 500:£0.9170
FQP34N20 DISTI # 1839004	ON Semiconductor	MOSFET,N CH,200V,31A,TO-220 RoHS: Compliant	625	1:$3.1500 10:$2.6900 100:$2.1600 500:$1.8800 1000:$1.5700

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FQP34N20

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes