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CSD19537Q3T

CSD19537Q3T
Mfr. #:
CSD19537Q3T
Descripción:
MOSFET 100V, N ch NexFET MOSFETG , single SON3x3, 14.5mOhm 8-VSON-CLIP -55 to 150
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
CSD19537Q3T Ficha de datos
Entrega:
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ECAD Model:
Más información:
CSD19537Q3T más información CSD19537Q3T Product Details
Atributo del producto
Valor de atributo
Fabricante:
Instrumentos Texas
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
VSON-CLIP-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
100 V
Id - Corriente de drenaje continua:
53 A
Rds On - Resistencia de la fuente de drenaje:
14.5 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.6 V
Vgs - Voltaje puerta-fuente:
10 V
Qg - Carga de puerta:
16 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
83 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
NexFET
Embalaje:
Carrete
Altura:
1 mm
Longitud:
3.3 mm
Serie:
CSD19537Q3
Tipo de transistor:
1 N-Channel
Ancho:
3.3 mm
Marca:
Instrumentos Texas
Transconductancia directa - Mín .:
45 S
Otoño:
3 ns
Tipo de producto:
MOSFET
Hora de levantarse:
3 ns
Cantidad de paquete de fábrica:
250
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
10 ns
Tiempo típico de retardo de encendido:
5 ns
Unidad de peso:
0.000847 oz
Tags
CSD1953, CSD19, CSD1, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
100V, N ch NexFET MOSFET™, single SON3x3, 14.5mOhm 8-VSON-CLIP -55 to 150
***Components
In a Pack of 5, Texas Instruments CSD19537Q3T MOSFET
***ical
Trans MOSFET N-CH Si 100V 50A 8-Pin VSON-CLIP EP T/R
***et Europe
Trans MOSFET N-CH 100V 50A 8-Pin VSON-CLIP T/R
***i-Key
MOSFET N-CH 100V 50A 8VSON
***ark
Mosfet, N-Ch, 100V, 50A, Vson-8; Transistor Polarity:n Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0121Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 100V, 50A, VSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0121ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:83W; Transistor Case Style:VSON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)
***nell
MOSFET, N-CH, 100V, 50A, VSON-8; Polarità Transistor:Canale N; Corrente Continua di Drain Id:50A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0121ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:83W; Modello Case Transistor:VSON; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)
***AS INSTRUMENTS INCORPORATED
This 100-V, 12.1-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
CSD19537Q3 N-Channel NexFET™ Power MOSFETs
OMO Electronic CSD19537Q3 N-Channel NexFET™ Power MOSFETs are a 100V 12.1mΩ N-Channel NexFET™ power MOSFET that is designed to minimize losses in power conversion applications. This MOSFET features an ultra-low Qg and Qgd with low thermal resistance. It is also avalanche rated and comes in Pb-Free, halogen free RoHS complant SON-8 3.3mmx3.3mm plastic package. Typical applications include primary side isolated converters and motor control.Learn More
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Disponibilidad
Valores:
15
En orden:
1998
Ingrese la cantidad:
El precio actual de CSD19537Q3T es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,36 US$
1,36 US$
10
1,16 US$
11,60 US$
100
0,89 US$
89,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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