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R6030ENZ1C9

R6030ENZ1C9
Mfr. #:
R6030ENZ1C9
Fabricante:
Rohm Semiconductor
Descripción:
MOSFET 10V Drive Nch MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
R6030ENZ1C9 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
R6030ENZ1C9 más información
Atributo del producto
Valor de atributo
Fabricante:
Semiconductor ROHM
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
30 A
Rds On - Resistencia de la fuente de drenaje:
115 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
85 nC
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
120 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Tipo de transistor:
1 N-Channel
Marca:
Semiconductor ROHM
Transconductancia directa - Mín .:
8 S
Otoño:
60 ns
Tipo de producto:
MOSFET
Hora de levantarse:
55 ns
Cantidad de paquete de fábrica:
450
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
190 ns
Tiempo típico de retardo de encendido:
40 ns
Parte # Alias:
R6030ENZ1
Unidad de peso:
0.000353 oz
Tags
R6030ENZ, R6030E, R6030, R603, R60
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247 Bulk
***i-Key
MOSFET N-CH 600V 30A TO247
***ark
Mosfet, N-Ch, 600V, 30A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.115Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes
Silicon Power MOSFETs
ROHM Semiconductor Silicon Power MOSFETs feature ultrafast switching speeds and low on-resistance. The MOSFETs are available in a wide lineup of packages, including the miniature 0604 package, for space saving in designs.
Parte # Mfg. Descripción Valores Precio
R6030ENZ1C9
DISTI # R6030ENZ1C9-ND		ROHM SemiconductorMOSFET N-CH 600V 30A TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		97In Stock
  • 2700:$2.6733
  • 900:$3.3366
  • 450:$3.7185
  • 25:$4.5224
  • 10:$4.7840
  • 1:$5.3300
R6030ENZ1C9
DISTI # R6030ENZ1C9		ROHM SemiconductorTrans MOSFET N-CH 600V ±30A 3-Pin TO-247 Tube - Tape and Reel (Alt: R6030ENZ1C9)
RoHS: Compliant
Min Qty: 450
Container: Reel		Americas - 0
  • 4500:$2.4900
  • 2700:$2.5900
  • 1800:$2.7900
  • 900:$2.8900
  • 450:$3.0900
R6030ENZ1C9
DISTI # 99Y2413		ROHM SemiconductorMOSFET, N-CH, 600V, 30A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.115ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes0
  • 250:$3.7200
  • 100:$3.9200
  • 50:$4.1200
  • 25:$4.3300
  • 10:$4.5300
  • 1:$5.3300
R6030ENZ1C9
DISTI # 755-R6030ENZ1C9		ROHM SemiconductorMOSFET 10V Drive Nch MOSFET
RoHS: Compliant		281
  • 1:$5.3300
  • 10:$4.5300
  • 100:$3.9200
  • 250:$3.7200
  • 450:$3.3400
  • 900:$2.8200
  • 2250:$2.6800
R6030ENZ1C9
DISTI # 1501494		ROHM SemiconductorMOSFET N-CH 600V 30A 10V DRIVE TO-247, PK10
  • 200:£2.8050
  • 100:£2.9700
  • 40:£3.1750
  • 10:£3.6300
  • 2:£4.1250
R6030ENZ1C9ROHM Semiconductor 12
  • 10:$7.6200
  • 4:$8.3820
  • 1:$11.4300
R6030ENZ1C9ROHM SemiconductorRoHS(ship within 1day)16
  • 1:$5.4900
  • 10:$4.6600
  • 50:$4.1100
  • 100:$3.9500
  • 500:$3.8900
  • 1000:$3.8100
R6030ENZ1C9
DISTI # 2630116		ROHM SemiconductorMOSFET, N-CH, 600V, 30A, TO-247
RoHS: Compliant		25
  • 450:$5.6100
  • 25:$6.8200
  • 10:$7.2100
  • 1:$8.0300
R6030ENZ1C9ROHM Semiconductor 30
  • 1:¥66.0322
  • 100:¥37.4403
  • 450:¥23.7371
R6030ENZ1C9
DISTI # 2630116		ROHM SemiconductorMOSFET, N-CH, 600V, 30A, TO-247
RoHS: Compliant		25
  • 10:£1.9900
  • 1:£2.2500
Imagen Parte # Descripción
MK20/1-B-100W

Mfr.#: MK20/1-B-100W

OMO.#: OMO-MK20-1-B-100W

 Proximity Sensors SPST-NO 1 Form A Cylindrical
59025-1-S-02-A

Mfr.#: 59025-1-S-02-A

OMO.#: OMO-59025-1-S-02-A

 Proximity Sensors PROX SENSOR NORM OPEN TINNED
59025-1-S-02-A

Mfr.#: 59025-1-S-02-A

OMO.#: OMO-59025-1-S-02-A-LITTELFUSE

 Proximity Sensors 59025-1-S-02-A SENS
MK18-B-300W

Mfr.#: MK18-B-300W

OMO.#: OMO-MK18-B-300W-STANDEX-MEDER-ELECTRONICS

 Proximity Sensors 1 Form A Cylindrical Term.
MK20/1-B-100W

Mfr.#: MK20/1-B-100W

OMO.#: OMO-MK20-1-B-100W-STANDEX-MEDER-ELECTRONICS

 Proximity Sensors SPST-NO 1 Form A Cylindrical
Disponibilidad
Valores:
265
En orden:
2248
Ingrese la cantidad:
El precio actual de R6030ENZ1C9 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
5,33 US$
5,33 US$
10
4,53 US$
45,30 US$
100
3,92 US$
392,00 US$
250
3,72 US$
930,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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