FQP8N90C

FQP8N90C
Mfr. #:
FQP8N90C
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 900V N-Ch Q-FET advance C-Series
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FQP8N90C Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
900 V
Id - Corriente de drenaje continua:
6 A
Rds On - Resistencia de la fuente de drenaje:
1.9 Ohms
Vgs - Voltaje puerta-fuente:
30 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
171 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
QFET
Embalaje:
Tubo
Altura:
16.3 mm
Longitud:
10.67 mm
Serie:
FQP8N90C
Tipo de transistor:
1 N-Channel
Escribe:
MOSFET
Ancho:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Transconductancia directa - Mín .:
5.5 S
Otoño:
70 ns
Tipo de producto:
MOSFET
Hora de levantarse:
110 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
70 ns
Tiempo típico de retardo de encendido:
40 ns
Parte # Alias:
FQP8N90C_NL
Unidad de peso:
0.063493 oz
Tags
FQP8N9, FQP8N, FQP8, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Power MOSFET, N-Channel, QFET®, 900 V, 6.3 A, 1.9 Ω, TO-220
***ark
Transistor,mosfet,n-Channel,900V V(Br)Dss,6.3A I(D),to-220 Rohs Compliant: Yes
***et Europe
Trans MOSFET N-CH 900V 6.3A 3-Pin(3+Tab) TO-220AB Rail
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Parte # Mfg. Descripción Valores Precio
FQP8N90C
DISTI # V36:1790_06359311
ON Semiconductor900V N-CHANNEL ADVANCE Q-FET C508
  • 10000:$1.0584
  • 5000:$1.1163
  • 2500:$1.1657
  • 1000:$1.2729
  • 500:$1.5446
  • 100:$1.7821
  • 10:$2.2364
  • 1:$2.9131
FQP8N90C
DISTI # FQP8N90C-ND
ON SemiconductorMOSFET N-CH 900V 6.3A TO-220
RoHS: Compliant
Min Qty: 1000
Container: Tube
Temporarily Out of Stock
  • 1000:$1.3527
FQP8N90C
DISTI # 25661034
ON Semiconductor900V N-CHANNEL ADVANCE Q-FET C508
  • 7:$2.9131
FQP8N90C
DISTI # FQP8N90C
ON SemiconductorTrans MOSFET N-CH 900V 6.3A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: FQP8N90C)
RoHS: Compliant
Min Qty: 250
Container: Bulk
Americas - 0
  • 500:$1.1900
  • 750:$1.1900
  • 1250:$1.1900
  • 2500:$1.1900
  • 250:$1.2900
FQP8N90C
DISTI # FQP8N90C
ON SemiconductorTrans MOSFET N-CH 900V 6.3A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP8N90C)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 1000:$1.0900
  • 2000:$1.0900
  • 4000:$1.0900
  • 6000:$1.0900
  • 10000:$1.0900
FQP8N90C
DISTI # FQP8N90C
ON SemiconductorTrans MOSFET N-CH 900V 6.3A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP8N90C)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€0.9779
  • 500:€1.0149
  • 100:€1.0539
  • 50:€1.0959
  • 25:€1.1419
  • 10:€1.2449
  • 1:€1.3699
FQP8N90C
DISTI # 84H4784
ON SemiconductorTRANSISTOR,MOSFET,N-CHANNEL,900V V(BR)DSS,6.3A I(D),TO-220 ROHS COMPLIANT: YES0
  • 10000:$1.2500
  • 2500:$1.3100
  • 1000:$1.4100
  • 500:$1.6900
  • 100:$1.9200
  • 10:$2.3600
  • 1:$2.9100
FQP8N90C
DISTI # 512-FQP8N90C
ON SemiconductorMOSFET 900V N-Ch Q-FET advance C-Series
RoHS: Compliant
657
  • 1:$2.6800
  • 10:$2.2800
  • 100:$1.8300
  • 500:$1.6000
  • 1000:$1.3300
  • 2500:$1.2300
  • 5000:$1.1900
FQP8N90CFairchild Semiconductor CorporationPower Field-Effect Transistor, 6.3A I(D), 900V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant
4585
  • 1000:$1.1300
  • 500:$1.1900
  • 100:$1.2400
  • 25:$1.2900
  • 1:$1.3900
FQP8N90CFairchild Semiconductor Corporation 40
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    OMO.#: OMO-3403-0285-23-SCHURTER

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    Mfr.#: RL1206FR-070R5L

    OMO.#: OMO-RL1206FR-070R5L-YAGEO

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    Mfr.#: S25FL127SABMFI101

    OMO.#: OMO-S25FL127SABMFI101-CYPRESS-SEMICONDUCTOR

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    Mfr.#: FAN4800CSNY

    OMO.#: OMO-FAN4800CSNY-ON-SEMICONDUCTOR

    IC CTLR PFC/PWM COMBO 16DIP
    Disponibilidad
    Valores:
    657
    En orden:
    2640
    Ingrese la cantidad:
    El precio actual de FQP8N90C es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    2,61 US$
    2,61 US$
    10
    2,22 US$
    22,20 US$
    100
    1,77 US$
    177,00 US$
    500
    1,55 US$
    775,00 US$
    1000
    1,28 US$
    1 280,00 US$
    2000
    1,19 US$
    2 380,00 US$
    5000
    1,15 US$
    5 750,00 US$
    10000
    1,11 US$
    11 100,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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