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IRFS4115TRLPBF

IRFS4115TRLPBF
Mfr. #:
IRFS4115TRLPBF
Fabricante:
Infineon / IR
Descripción:
MOSFET MOSFT 150V 99A 12.1mOhm 77nC Qg
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRFS4115TRLPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFS4115TRLPBF DatasheetIRFS4115TRLPBF Datasheet (P4)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-252-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
150 V
Id - Corriente de drenaje continua:
99 A
Rds On - Resistencia de la fuente de drenaje:
12.1 mOhms
Vgs th - Voltaje umbral puerta-fuente:
5 V
Qg - Carga de puerta:
120 nC
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
375 W
Configuración:
Único
Embalaje:
Carrete
Altura:
2.3 mm
Longitud:
6.5 mm
Tipo de transistor:
1 N-Channel
Ancho:
6.22 mm
Marca:
Infineon / IR
Transconductancia directa - Mín .:
97 S
Otoño:
39 ns
Tipo de producto:
MOSFET
Hora de levantarse:
73 ns
Cantidad de paquete de fábrica:
800
Subcategoría:
MOSFET
Parte # Alias:
SP001578272
Unidad de peso:
0.139332 oz
Tags
IRFS4115TRL, IRFS4115T, IRFS411, IRFS41, IRFS4, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Mosfet Transistor, N Channel, 62 A, 150 V, 0.0103 Ohm, 20 V, 5 V
***(Formerly Allied Electronics)
IRFS4115PBF N-channel MOSFET Transistor; 195 A; 150 V; 3-Pin D2PAK
***ure Electronics
Single N-Channel 150 V 12.1 mOhm 120 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***p One Stop
Trans MOSFET N-CH Si 150V 195A 3-Pin(2+Tab) D2PAK Tube
***roFlash
Power Field-Effect Transistor, 99A I(D), 150V, 0.0121ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N-CH 150V 99A D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 62A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.0103ohm; Rds(on) Test Voltage Vgs: 20V; Threshold Voltage Vgs: 5V; Power D
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 99 / Drain-Source Voltage (Vds) V = 150 / ON Resistance (Rds(on)) mOhm = 10.3 / Gate-Source Voltage V = 20 / Fall Time ns = 39 / Rise Time ns = 73 / Turn-OFF Delay Time ns = 41 / Turn-ON Delay Time ns = 73 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = D2PAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 375
***ure Electronics
N-Channel 150 V 92 A 11 mOhm N-Channel Power Trench Mosfet - D2PAK-3
***emi
N-Channel PowerTrench® MOSFET 150V, 92A, 11mΩ
***ment14 APAC
MOSFET, N-CH, 150V, 92A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:92A; Source Voltage Vds:150V; On Resistance
***r Electronics
Power Field-Effect Transistor, 92A I(D), 150V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***el Electronic
Chip Resistor - Surface Mount 3.3 k Ω 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 3.3K OHM 1% 1/10W 0402
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET, N-CH, 150V, 92A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 92A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.00925ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 234W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
*** Source Electronics
Trans MOSFET N-CH 150V 8A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 150V 79A D2PAK
***ure Electronics
N-Channel 150 V 0.075 Ohm Surface Mount PowerTrench Mosfet - D2PAK-3
***emi
N-Channel PowerTrench® MOSFET 150V, 79A, 16mΩ
***r Electronics
Power Field-Effect Transistor, 8A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***el Electronic
Chip Resistor - Surface Mount 40.2Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 40.2 OHM 1% 1/10W 0402
***ment14 APAC
MOSFET, N, SMD, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:150V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:310W; Transistor Case Style:TO-263AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:79A; Package / Case:TO-263AB; Power Dissipation Pd:310W; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***eco
Transistor MOSFET Negative Channel 150 Volt 83A 3-Pin(2+Tab) D2PAK
***ure Electronics
Single N-Channel 150 V 15 mOhm 71 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ical
Trans MOSFET N-CH 150V 83A 3-Pin(2+Tab) D2PAK Tube
*** Stop Electro
Power Field-Effect Transistor, 75A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:85A; On Resistance Rds(On):0.012Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V Rohs Compliant: Yes
***emi
N-Channel PowerTrench® MOSFET 150V, 130A, 7.5mΩ
***hard Electronics
N CH MOSFET, POWERTRENCH, 150V, 130A, D2PAK - More Details
***Yang
Trans MOSFET N-CH 150V 130A 3-Pin(2+Tab) D2PAK T/R - Product that comes on tape, but is not reeled (
***ment14 APAC
MOSFET, N-CH, 150V, 130A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Source Voltage Vds:150V; On Resistance
***roFlash
Power Field-Effect Transistor, 120A I(D), 150V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET, N-CH, 150V, 130A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 130A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.00625ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 333W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
Parte # Mfg. Descripción Valores Precio
IRFS4115TRLPBF
DISTI # IRFS4115TRLPBFCT-ND		Infineon Technologies AGMOSFET N-CH 150V 195A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3150In Stock
  • 100:$2.5024
  • 10:$3.0520
  • 1:$3.4200
IRFS4115TRLPBF
DISTI # IRFS4115TRLPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 150V 195A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3150In Stock
  • 100:$2.5024
  • 10:$3.0520
  • 1:$3.4200
IRFS4115TRLPBF
DISTI # IRFS4115TRLPBFTR-ND		Infineon Technologies AGMOSFET N-CH 150V 195A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		2400In Stock
  • 800:$1.7777
IRFS4115TRLPBF
DISTI # 30688041		Infineon Technologies AGTrans MOSFET N-CH Si 150V 195A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		531
  • 500:$1.4461
  • 250:$1.6864
  • 100:$1.7775
  • 25:$2.0015
  • 10:$2.0250
  • 6:$2.3113
IRFS4115TRLPBF
DISTI # IRFS4115TRLPBF		Infineon Technologies AGTrans MOSFET N-CH 150V 195A 3-Pin(2+Tab) D2PAK T/R (Alt: IRFS4115TRLPBF)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Asia - 0
  • 800:$1.3892
  • 1600:$1.3321
  • 2400:$1.3141
  • 4000:$1.2629
  • 8000:$1.2467
  • 20000:$1.2155
  • 40000:$1.1859
IRFS4115TRLPBF
DISTI # IRFS4115TRLPBF		Infineon Technologies AGTrans MOSFET N-CH 150V 195A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRFS4115TRLPBF)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 800:$1.2419
  • 1600:$1.1969
  • 3200:$1.1529
  • 4800:$1.1149
  • 8000:$1.0949
IRFS4115TRLPBF
DISTI # 13AC9155		Infineon Technologies AGMOSFET, N-CH, 150V, 195A, TO-263AB,Transistor Polarity:N Channel,Continuous Drain Current Id:195A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.0103ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power RoHS Compliant: Yes2
  • 1:$3.1500
  • 10:$2.6700
  • 25:$2.5500
  • 50:$2.4400
  • 100:$2.3200
  • 250:$2.2000
  • 500:$1.9700
IRFS4115TRLPBF
DISTI # 70019747		Infineon Technologies AGIRFS4115TRLPBF N-channel MOSFET Transistor,195 A,150 V,3+Tab-Pin D2PAK
RoHS: Compliant		0
  • 800:$4.6700
IRFS4115TRLPBF
DISTI # 942-IRFS4115TRLPBF		Infineon Technologies AGMOSFET MOSFT 150V 99A 12.1mOhm 77nC Qg
RoHS: Compliant		1075
  • 1:$2.8600
  • 10:$2.4300
  • 100:$2.1100
  • 250:$2.0000
  • 500:$1.7900
IRFS4115TRLPBF
DISTI # 9155033P		Infineon Technologies AGMOSFET N-CHANNEL HEXFET 150V 99A D2PAK, RL1748
  • 40:£1.7550
IRFS4115TRLPBFInternational RectifierINSTOCK750
    IRFS4115TRLPBF
    DISTI # 2725984    		Infineon Technologies AGMOSFET, N-CH, 150V, 195A, TO-263AB
    RoHS: Compliant    		2
    • 1:$5.4500
    • 10:$4.8700
    • 100:$3.9900
    IRFS4115TRLPBF
    DISTI # 2725984    		Infineon Technologies AGMOSFET, N-CH, 150V, 195A, TO-263AB
    RoHS: Compliant    		2
    • 1:£2.2500
    • 10:£1.7800
    • 100:£1.6700
    • 250:£1.5800
    • 500:£1.3900
    IRFS4115TRLPBF
    DISTI # C1S322000495322    		Infineon Technologies AGTrans MOSFET N-CH Si 150V 195A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		531
    • 100:$1.7552
    • 50:$1.9754
    • 25:$1.9990
    • 10:$2.0232
    • 1:$2.3101
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    Disponibilidad
    Valores:
    Available
    En orden:
    1984
    Ingrese la cantidad:
    El precio actual de IRFS4115TRLPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    2,85 US$
    2,85 US$
    10
    2,42 US$
    24,20 US$
    100
    2,10 US$
    210,00 US$
    250
    1,99 US$
    497,50 US$
    500
    1,78 US$
    890,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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