SI4430BDY-T1-GE3

SI4430BDY-T1-GE3
Mfr. #:
SI4430BDY-T1-GE3
Fabricante:
Vishay
Descripción:
RF Bipolar Transistors MOSFET 30V 20A 3.0W 4.5mohm @ 10V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4430BDY-T1-GE3 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
SI4430BDY-T1-GE3 más información
Atributo del producto
Valor de atributo
Tags
SI4430BDY-T, SI4430BDY, SI4430B, SI4430, SI443, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 0.006 Ohm 36 nC 1.6 W Silicon SMT Mosfet - SOIC-8
***ical
Trans MOSFET N-CH Si 30V 14A 8-Pin SOIC N T/R
***nell
N CHANNEL MOSFET, 30V, 20A, SOIC
***ment14 APAC
N CHANNEL MOSFET, 30V, 20A, SOIC; Transi; N CHANNEL MOSFET, 30V, 20A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:3V
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Parte # Mfg. Descripción Valores Precio
SI4430BDY-T1-GE3
DISTI # SI4430BDY-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 30V 14A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1440In Stock
  • 1000:$0.8086
  • 500:$0.9759
  • 100:$1.2548
  • 10:$1.5610
  • 1:$1.7300
SI4430BDY-T1-GE3
DISTI # SI4430BDY-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 30V 14A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1440In Stock
  • 1000:$0.8086
  • 500:$0.9759
  • 100:$1.2548
  • 10:$1.5610
  • 1:$1.7300
SI4430BDY-T1-GE3
DISTI # SI4430BDY-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 30V 14A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
On Order
  • 2500:$0.7580
SI4430BDY-T1-GE3
DISTI # SI4430BDY-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 14A 8-Pin SOIC N T/R (Alt: SI4430BDY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Asia - 0
    SI4430BDY-T1-GE3
    DISTI # SI4430BDY-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 30V 14A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4430BDY-T1-GE3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel
    Americas - 0
    • 2500:$0.7419
    • 5000:$0.7399
    • 10000:$0.7379
    • 15000:$0.7369
    • 25000:$0.7349
    SI4430BDY-T1-GE3
    DISTI # 84W7286
    Vishay IntertechnologiesMOSFET, N CHANNEL, 30V, 0.0037OHM, 14A, SOIC-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:14A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0037ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins, RoHS Compliant: Yes0
    • 1:$0.8910
    • 2500:$0.8840
    • 5000:$0.8580
    • 10000:$0.8260
    SI4430BDY-T1-GE3
    DISTI # 16P3737
    Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 20A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0037ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V,Product Range:- , RoHS Compliant: Yes0
    • 1:$1.9500
    • 10:$1.6200
    • 25:$1.5000
    • 50:$1.3800
    • 100:$1.2600
    • 250:$1.1800
    • 500:$1.1000
    SI4430BDY-T1-GE3
    DISTI # 781-SI4430BDY-T1-GE3
    Vishay IntertechnologiesMOSFET 30V 20A 3.0W 4.5mohm @ 10V
    RoHS: Compliant
    2420
    • 1:$1.9500
    • 10:$1.6200
    • 100:$1.2600
    • 500:$1.1000
    • 1000:$0.9080
    • 2500:$0.8450
    • 5000:$0.8140
    SI4430BDY-T1-GE3
    DISTI # 1771925
    Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 20A, SOIC
    RoHS: Compliant
    0
    • 1:$2.7500
    • 10:$2.4700
    • 100:$1.9900
    • 500:$1.5500
    • 1000:$1.2800
    SI4430BDY-T1-GE3
    DISTI # 1771925
    Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 20A, SOIC
    RoHS: Compliant
    0
    • 2500:£0.9660
    Imagen Parte # Descripción
    SI4430BDY-T1-GE3

    Mfr.#: SI4430BDY-T1-GE3

    OMO.#: OMO-SI4430BDY-T1-GE3

    MOSFET 30V 20A 3.0W 4.5mohm @ 10V
    SI4430BDY-T1-E3

    Mfr.#: SI4430BDY-T1-E3

    OMO.#: OMO-SI4430BDY-T1-E3

    MOSFET 30V 20A 0.0045Ohm
    SI4430BDY-T1-GE3

    Mfr.#: SI4430BDY-T1-GE3

    OMO.#: OMO-SI4430BDY-T1-GE3-VISHAY

    RF Bipolar Transistors MOSFET 30V 20A 3.0W 4.5mohm @ 10V
    SI4430BDY-T1-E3-CUT TAPE

    Mfr.#: SI4430BDY-T1-E3-CUT TAPE

    OMO.#: OMO-SI4430BDY-T1-E3-CUT-TAPE-1190

    Nuevo y original
    SI4430BD

    Mfr.#: SI4430BD

    OMO.#: OMO-SI4430BD-1190

    Nuevo y original
    SI4430BDY

    Mfr.#: SI4430BDY

    OMO.#: OMO-SI4430BDY-1190

    Nuevo y original
    SI4430BDY-T1-E3

    Mfr.#: SI4430BDY-T1-E3

    OMO.#: OMO-SI4430BDY-T1-E3-VISHAY

    MOSFET N-CH 30V 14A 8-SOIC
    SI4430BDY-T1-E3-S

    Mfr.#: SI4430BDY-T1-E3-S

    OMO.#: OMO-SI4430BDY-T1-E3-S-1190

    Nuevo y original
    SI4430BDY-T1-E3.

    Mfr.#: SI4430BDY-T1-E3.

    OMO.#: OMO-SI4430BDY-T1-E3--1190

    N-CHANNEL 30-V MOSFET ROHS COMPLIANT: YES
    Disponibilidad
    Valores:
    Available
    En orden:
    2500
    Ingrese la cantidad:
    El precio actual de SI4430BDY-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,03 US$
    1,03 US$
    10
    0,98 US$
    9,82 US$
    100
    0,93 US$
    93,03 US$
    500
    0,88 US$
    439,30 US$
    1000
    0,83 US$
    826,90 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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