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MG12200D-BA1MM

MG12200D-BA1MM
Mfr. #:
MG12200D-BA1MM
Fabricante:
Littelfuse
Descripción:
IGBT Modules 1200V 200A Dual
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
MG12200D-BA1MM Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
MG12200D-BA1MM más información
Atributo del producto
Valor de atributo
Fabricante:
Littelfuse
Categoria de producto:
Módulos IGBT
RoHS:
Y
Producto:
Módulos de silicio IGBT
Configuración:
Doble
Voltaje colector-emisor VCEO Max:
1200 V
Voltaje de saturación colector-emisor:
1.8 V
Corriente continua del colector a 25 C:
300 A
Corriente de fuga puerta-emisor:
400 nA
Pd - Disipación de energía:
1400 W
Paquete / Caja:
Paquete D
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Embalaje:
A granel
Serie:
MG12200D
Marca:
Littelfuse
Estilo de montaje:
Montaje en chasis
Voltaje máximo del emisor de puerta:
20 V
Tipo de producto:
Módulos IGBT
Cantidad de paquete de fábrica:
60
Subcategoría:
IGBT
Unidad de peso:
10.053079 oz
Tags
MG122, MG12, MG1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Igbt Module, Dual Npn, 1.2Kv, 300A
***C
IGBT Modules 1200V 200A Dual
***i-Key
IGBT MODULE 1200V 300A 1400W D3
***
1200V 200A D-PACKAGE
Silicon IGBT Power Modules
Littelfuse Silicon IGBT Power Modules ensure high efficiency and fast switching by combining simple MOSFET gate-drive with the high current and low saturation voltage switching capability of bipolar transistors. These features make them well-suited for a wide range of power conversion applications. In addition, the positive temperature coefficient of the modules allows for ease in paralleling to boost the current capability of the system. The modules are rated up to 1700V and 600A in industry standard packages and common topologies.
Parte # Mfg. Descripción Valores Precio
MG12200D-BA1MM
DISTI # F6481-ND		Littelfuse IncIGBT 1200V 300A 1400W PKG D
RoHS: Compliant
Min Qty: 1
Container: Bulk		65In Stock
  • 25:$112.4564
  • 10:$116.5310
  • 1:$124.6800
MG12200D-BA1MM
DISTI # 576-MG12200D-BA1MM		Littelfuse IncIGBT Modules 1200V 200A Dual
RoHS: Compliant		1
  • 1:$124.6800
  • 5:$122.2300
  • 10:$116.5400
MG12200D-BA1MM
DISTI # MG12200D-BA1MM		Littelfuse IncIGBT half-bridge,Urmax:1.2kV,Ic:210A,package D,screw,screw10
  • 1:$134.0000
  • 3:$123.0000
  • 10:$107.0000
MG12200D-BA1MMLittelfuse IncIGBT Modules 1200V 200A Dual
RoHS: Compliant		Americas -
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    Disponibilidad
    Valores:
    Available
    En orden:
    1984
    Ingrese la cantidad:
    El precio actual de MG12200D-BA1MM es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    124,68 US$
    124,68 US$
    5
    122,23 US$
    611,15 US$
    10
    116,54 US$
    1 165,40 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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