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AUIRFB4410

AUIRFB4410
Mfr. #:
AUIRFB4410
Fabricante:
Infineon Technologies
Descripción:
MOSFET AUTO 100V 1 N-CH HEXFET 10mOhms
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
AUIRFB4410 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
AUIRFB4410 DatasheetAUIRFB4410 Datasheet (P4-P6)AUIRFB4410 Datasheet (P7-P9)AUIRFB4410 Datasheet (P10-P11)
ECAD Model:
Más información:
AUIRFB4410 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
100 V
Id - Corriente de drenaje continua:
75 A
Rds On - Resistencia de la fuente de drenaje:
8 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
120 nC
Temperatura mínima de funcionamiento:
- 55 C
Pd - Disipación de energía:
200 W
Configuración:
Único
Modo de canal:
Mejora
Calificación:
AEC-Q101
Embalaje:
Tubo
Altura:
15.65 mm
Longitud:
10 mm
Tipo de transistor:
1 N-Channel
Ancho:
4.4 mm
Marca:
Infineon Technologies
Otoño:
50 ns
Tipo de producto:
MOSFET
Hora de levantarse:
80 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
55 ns
Tiempo típico de retardo de encendido:
24 ns
Parte # Alias:
SP001516730
Unidad de peso:
0.211644 oz
Tags
AUIRFB4, AUIRFB, AUIRF, AUIR, AUI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    C***t
    C***t
    FR

    not tested yet, but good recept

    2019-05-20
    Y***u
    Y***u
    BY

    Thank you!

    2019-07-01
    E**a
    E**a
    RU

    Nihua did not arrive the parcel .. after 2.5 months opened a dispute... ali returned the money

    2019-04-26
***ernational Rectifier
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package
***ical
Trans MOSFET N-CH 100V 88A Automotive 3-Pin(3+Tab) TO-220AB Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
***nell
MOSFET,W DIO,N CH,100V,75A,TO220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:88A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; Voltage Vgs Max:20V
75V to 100V N-Channel Automotive MOSFETs
Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.
Parte # Mfg. Descripción Valores Precio
AUIRFB4410
DISTI # 33931433		Infineon Technologies AGTrans MOSFET N-CH Si 100V 88A Automotive 3-Pin(3+Tab) TO-220AB Tube1150
  • 8:$1.2878
AUIRFB4410
DISTI # AUIRFB4410-ND		Infineon Technologies AGMOSFET N-CH 100V 75A TO220AB
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$1.4709
AUIRFB4410
DISTI # AUIRFB4410		Infineon Technologies AGTrans MOSFET N-CH 100V 88A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: AUIRFB4410)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 6000:$1.1900
  • 10000:$1.1900
  • 2000:$1.2900
  • 4000:$1.2900
  • 1000:$1.3900
AUIRFB4410
DISTI # AUIRFB4410		Infineon Technologies AGTrans MOSFET N-CH 100V 88A 3-Pin(3+Tab) TO-220AB Tube - Bulk (Alt: AUIRFB4410)
Min Qty: 266
Container: Bulk		Americas - 0
  • 2660:$1.0900
  • 798:$1.1900
  • 1330:$1.1900
  • 266:$1.2900
  • 532:$1.2900
AUIRFB4410
DISTI # SP001516730		Infineon Technologies AGTrans MOSFET N-CH 100V 88A 3-Pin(3+Tab) TO-220AB Tube (Alt: SP001516730)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 100:€1.1900
  • 500:€1.1900
  • 1000:€1.1900
  • 50:€1.2900
  • 25:€1.3900
  • 10:€1.4900
  • 1:€1.5900
AUIRFB4410
DISTI # 70411620		Infineon Technologies AGAUIRFB4410 N-channel MOSFET Transistor,88 A,100 V,3-Pin TO-220AB
RoHS: Compliant		232
  • 1:$7.6500
  • 10:$6.7500
  • 100:$5.8800
  • 500:$5.1000
  • 1000:$4.5000
AUIRFB4410
DISTI # 942-AUIRFB4410		Infineon Technologies AGMOSFET AUTO 100V 1 N-CH HEXFET 10mOhms
RoHS: Compliant		744
  • 1:$2.6400
  • 10:$2.2500
  • 100:$1.9500
  • 250:$1.8500
  • 500:$1.6600
  • 1000:$1.4000
  • 2000:$1.3300
  • 5000:$1.2800
AUIRFB4410Infineon Technologies AGPower Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		300
  • 1000:$1.3200
  • 500:$1.3900
  • 100:$1.4400
  • 25:$1.5000
  • 1:$1.6200
AUIRFB4410International RectifierPower Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		2510
  • 1000:$1.3200
  • 500:$1.3900
  • 100:$1.4400
  • 25:$1.5000
  • 1:$1.6200
AUIRFB4410
DISTI # 7604306P		Infineon Technologies AGMOSFET N-CHANNEL 100V 88A HEXFET TO220AB, TU17
  • 500:£1.2000
  • 250:£1.2400
  • 100:£1.2900
  • 25:£1.4800
AUIRFB4410
DISTI # AUIRFB4410		Infineon Technologies AGTransistor: N-MOSFET,unipolar,100V,75A,200W,TO220AB23
  • 50:$1.4000
  • 10:$1.5500
  • 3:$1.7700
  • 1:$2.0700
AUIRFB4410International RectifierPower Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Not Compliant		50
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    Disponibilidad
    Valores:
    744
    En orden:
    2727
    Ingrese la cantidad:
    El precio actual de AUIRFB4410 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    2,64 US$
    2,64 US$
    10
    2,25 US$
    22,50 US$
    100
    1,95 US$
    195,00 US$
    250
    1,85 US$
    462,50 US$
    500
    1,66 US$
    830,00 US$
    1000
    1,40 US$
    1 400,00 US$
    2000
    1,33 US$
    2 660,00 US$
    5000
    1,28 US$
    6 400,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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