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BSM25GP120

BSM25GP120
Mfr. #:
BSM25GP120
Fabricante:
Infineon Technologies
Descripción:
IGBT Modules 1200V 25A PIM
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSM25GP120 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Módulos IGBT
RoHS:
Y
Producto:
Módulos de silicio IGBT
Configuración:
Array 7
Voltaje colector-emisor VCEO Max:
1600 V
Voltaje de saturación colector-emisor:
2.55 V
Corriente continua del colector a 25 C:
45 A
Corriente de fuga puerta-emisor:
300 nA
Pd - Disipación de energía:
230 W
Paquete / Caja:
EconoPIM2
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 125 C
Embalaje:
Bandeja
Altura:
17 mm
Longitud:
107.5 mm
Ancho:
45 mm
Marca:
Infineon Technologies
Estilo de montaje:
Montaje en chasis
Voltaje máximo del emisor de puerta:
20 V
Tipo de producto:
Módulos IGBT
Cantidad de paquete de fábrica:
10
Subcategoría:
IGBT
Parte # Alias:
BSM25GP120BOSA1 SP000095940
Unidad de peso:
6.349313 oz
Tags
BSM25GP1, BSM25GP, BSM25G, BSM25, BSM2, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***omponent
Large Current Speed Switching / Darlington / Building Block Transistors
***ser
IGBT - Standard Modules 1200V, 25A, PIM
Parte # Mfg. Descripción Valores Precio
BSM25GP120BOSA1
DISTI # BSM25GP120BOSA1-ND		Infineon Technologies AGIGBT 2 LOW POWER ECONO2-5
RoHS: Compliant
Min Qty: 10
Container: Tray		Limited Supply - Call
  • 10:$109.7240
BSM25GP120BOSA1
DISTI # BSM25GP120BOSA1		Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 25A nom 230W 24-Pin EconoPIM2 107.5x45mm - Trays (Alt: BSM25GP120BOSA1)
RoHS: Compliant
Min Qty: 10
Container: Tray		Americas - 0
  • 10:$102.3900
  • 20:$98.6900
  • 40:$95.0900
  • 60:$91.8900
  • 100:$90.2900
BSM25GP120BOSA1
DISTI # SP000095940		Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 25A nom 230W 24-Pin EconoPIM2 107.5x45mm (Alt: SP000095940)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€97.3900
  • 10:€94.4900
  • 25:€93.4900
  • 50:€88.7900
  • 100:€87.2900
  • 500:€86.2900
  • 1000:€85.0900
BSM25GP120
DISTI # 641-BSM25GP120		Infineon Technologies AGIGBT Modules 1200V 25A PIM
RoHS: Compliant		0
  • 1:$113.7400
  • 5:$111.6500
  • 10:$106.6200
  • 25:$103.0700
BSM25GP120_B2
DISTI # 641-BSM25GP120_B2		Infineon Technologies AGIGBT Modules IGBT 1600V 25A0
    BSM25GP120SiemensInsulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel
    RoHS: Not Compliant    		Europe - 19
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      Disponibilidad
      Valores:
      32
      En orden:
      2015
      Ingrese la cantidad:
      El precio actual de BSM25GP120 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      113,74 US$
      113,74 US$
      5
      111,65 US$
      558,25 US$
      10
      106,62 US$
      1 066,20 US$
      25
      103,07 US$
      2 576,75 US$
      100
      95,97 US$
      9 597,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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