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IRF200P222

IRF200P222
Mfr. #:
IRF200P222
Fabricante:
Infineon Technologies
Descripción:
MOSFET IFX OPTIMOS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF200P222 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IRF200P222 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247AC-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
200 V
Id - Corriente de drenaje continua:
182 A
Rds On - Resistencia de la fuente de drenaje:
6.6 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
203 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
Fuerte IRFET
Embalaje:
Tubo
Tipo de transistor:
1 N-Channel
Marca:
Infineon Technologies
Transconductancia directa - Mín .:
142 S
Otoño:
97 ns
Tipo de producto:
MOSFET
Hora de levantarse:
96 ns
Cantidad de paquete de fábrica:
400
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
77 ns
Tiempo típico de retardo de encendido:
25 ns
Parte # Alias:
SP001582092
Unidad de peso:
0.211644 oz
Tags
IRF200, IRF20, IRF2, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET N-CH 200V 182A 3-Pin TO-247AC Tube
***ure Electronics
Single N-Channel 200 V 6.6 mOhm 135 nC StrongIRFET™ IR Mosfet - TO-247AC
***ical
Trans MOSFET N-CH 200V 182A 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans MOSFET N-CH 200V 182A Strong RFET 3TO-247AC
***i-Key
MOSFET N-CH 200V 182A TO247AC
***ark
Mosfet, N-Ch, 200V, 182A, 556W, To-247Ac; Transistor Polarity:n Channel; Continuous Drain Current Id:182A; Drain Source Voltage Vds:200V; On Resistance Rds(On):0.0053Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ineon
Target Applications: UPS and Inverter applications Half-bridge and full-bridge topologies Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power switches Brushed and BLDC Motor drive applications Battery powered circuits
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 200V, 182A, 556W, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:182A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.0053ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:556W; Transistor Case Style:TO-247AC; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:StrongIRFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET CAN N, 200V, 182A, 556W, TO-247AC; Polarità Transistor:Canale N; Corrente Continua di Drain Id:182A; Tensione Drain Source Vds:200V; Resistenza di Attivazione Rds(on):0.0053ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:556W; Modello Case Transistor:TO-247AC; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:StrongIRFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
Light Electric Vehicles (LEV)
Infineon Light Electric Vehicles have world-changing potential utilizing the emission-free solution for rising megacities. LEV's apply new technology enabling greater power efficiency, smaller size, lighter weight, and lower cost solutions. LEVs cost less when compared to gasoline or battery powered EVs, making them affordable and hence attractive to emerging markets, where a transition to electrified mobility is in progress.
StrongIRFET™ Power MOSFETs
Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 
Parte # Mfg. Descripción Valores Precio
IRF200P222
DISTI # V99:2348_17072163		Infineon Technologies AGIFX OPTIMOS107
  • 250:$9.1580
  • 100:$9.6400
  • 25:$10.7929
  • 10:$11.2840
  • 1:$12.1870
IRF200P222
DISTI # IRF200P222-ND		Infineon Technologies AGMOSFET N-CH 200V 182A TO247AC
RoHS: Compliant
Min Qty: 1
Container: Tube		579In Stock
  • 400:$11.3268
  • 10:$14.6150
  • 1:$16.0800
IRF200P222
DISTI # 30644455		Infineon Technologies AGIFX OPTIMOS400
  • 100:$12.4185
  • 50:$13.7700
  • 10:$14.4075
  • 5:$15.4275
  • 2:$16.8300
IRF200P222
DISTI # 26688434		Infineon Technologies AGIFX OPTIMOS107
  • 100:$9.6400
  • 25:$10.7929
  • 10:$11.2840
  • 1:$12.1870
IRF200P222
DISTI # IRF200P222		Infineon Technologies AGTrans MOSFET N-CH 200V 182A Strong RFET 3TO-247AC (Alt: IRF200P222)
RoHS: Compliant
Min Qty: 400		Asia - 0
    IRF200P222
    DISTI # IRF200P222    		Infineon Technologies AGTrans MOSFET N-CH 200V 182A Strong RFET 3TO-247AC - Rail/Tube (Alt: IRF200P222)
    RoHS: Compliant
    Min Qty: 400
    Container: Tube    		Americas - 0
    • 400:$7.5900
    • 800:$7.2900
    • 1600:$7.0900
    • 2400:$6.7900
    • 4000:$6.6900
    IRF200P222
    DISTI # 726-IRF200P222    		Infineon Technologies AGMOSFET IFX OPTIMOS
    RoHS: Compliant    		998
    • 1:$13.9500
    • 10:$12.8300
    • 25:$12.3000
    • 100:$10.8300
    • 250:$10.3000
    IRF200P222
    DISTI # IRF200P222    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,200V,129A,556W,TO247AC5
    • 1:$14.8100
    • 3:$13.3100
    • 10:$11.8200
    • 25:$10.5900
    IRF200P222
    DISTI # C1S322000688001    		Infineon Technologies AGMOSFETs400
    • 200:$9.5000
    • 100:$9.7400
    • 50:$10.8000
    • 10:$11.3000
    • 5:$12.1000
    • 1:$13.2000
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    Disponibilidad
    Valores:
    Available
    En orden:
    1984
    Ingrese la cantidad:
    El precio actual de IRF200P222 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    7,43 US$
    7,43 US$
    10
    6,71 US$
    67,10 US$
    25
    6,40 US$
    160,00 US$
    100
    5,56 US$
    556,00 US$
    250
    5,31 US$
    1 327,50 US$
    500
    4,84 US$
    2 420,00 US$
    1000
    4,46 US$
    4 460,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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