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ZDS020N60TB

ZDS020N60TB
Mfr. #:
ZDS020N60TB
Fabricante:
Rohm Semiconductor
Descripción:
MOSFET 10V Drive Nch MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
ZDS020N60TB Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Semiconductor ROHM
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOP-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
630 mA
Rds On - Resistencia de la fuente de drenaje:
4.4 Ohms
Vgs th - Voltaje umbral puerta-fuente:
2 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
20 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
2 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Serie:
ZDS020N60
Tipo de transistor:
1 N-Channel
Marca:
Semiconductor ROHM
Transconductancia directa - Mín .:
50 mS
Otoño:
65 ns
Tipo de producto:
MOSFET
Hora de levantarse:
20 ns
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
65 ns
Tiempo típico de retardo de encendido:
25 ns
Parte # Alias:
ZDS020N60
Tags
ZDS020N, ZDS02, ZDS0, ZDS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 600V 0.63A 8-Pin SOP T/R
*** Source Electronics
MOSFET N-CH 600V 8SOIC
***i-Key
MOSFET N-CH 600V 630MA 8SOP
***ure Electronics
Dual N-Channel 450 V 3.8 Ohm SMT SuperMESH3 Power MosFet - SOIC-8
***ical
Trans MOSFET N-CH 450V 0.5A 8-Pin SO N T/R
***r Electronics
Power Field-Effect Transistor, 0.5A I(D), 450V, 3.8ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
MOSFET, N CH, 450V, 0.5A, 8SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 500mA; Drain Source Voltage Vds: 450V; On Resistance Rds(on): 3.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 1.7W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015)
***(Formerly Allied Electronics)
FW276-TL-2H Dual N-channel MOSFET Transistor; 0.7 A; 450 V; 8-Pin SOIC
***emi
N-Channel Power MOSFET, 450V, 0.7A, 12.1Ω, Dual SOIC8
***ark
Dual MOSFET, Dual N Channel, 700 mA, 450 V, 9.3 ohm, 10 V, 4.5 V
***et
Trans MOSFET N-CH 450V 0.7A 8-Pin SOIC T/R
***nell
NCH DUAL 400V 0.7A SOIC8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 700mA; Drain Source Voltage Vds: 450V; On Resistance Rds(on): 9.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
***icroelectronics
DUAL N-CHANNEL 450V - 4.1 OHM - 0.4A SO-8 SuperMESH POWER MOSFET
***et
Transistor MOSFET Array Dual N-CH 450V 0.4A 8-Pin SOIC T/R
***ark
Mosfet, Dual N-Ch, 450V, 0.4A, Soic; Channel Type:n Channel; Drain Source Voltage Vds N Channel:450V; Drain Source Voltage Vds P Channel:450V; Continuous Drain Current Id N Channel:400Ma; Continuous Drain Current Id P Channel:400Ma Rohs Compliant: Yes
***et
Transistor MOSFET Array Dual N-CH 450V 0.85A 8-Pin SOIC T/R
***des Inc SCT
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 450V VDS, 30±V VGS,
***roFlash
Trans MOSFET N-CH 450V 0.5A Automotive 8-Pin SO T/R
***ark
Mosfet, Dual, N-Ch, 450V, 0.5A Rohs Compliant: Yes
***ark
Mosfet Transistor, N Channel, 1.9 A, 150 V, 280 Mohm, 10 V, 5.5 V Rohs Compliant: Yes
***(Formerly Allied Electronics)
IRF7465PBF N-channel MOSFET Transistor,1.9 A, 150 V, 8-Pin SOIC
***ure Electronics
Single N-Channel 150 V 0.28 Ohm 15 nC HEXFET® Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 150V 1.9A 8-Pin SOIC Tube
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
*** Stop Electro
Small Signal Field-Effect Transistor, 1.9A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, N, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.9A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.28ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5.5V; Power Dissipation
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.9 / Drain-Source Voltage (Vds) V = 150 / ON Resistance (Rds(on)) mOhm = 280 / Gate-Source Voltage V = 30 / Fall Time ns = 9 / Rise Time ns = 1.2 / Turn-OFF Delay Time ns = 10 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 2.5
Parte # Mfg. Descripción Valores Precio
ZDS020N60TB
DISTI # ZDS020N60TB-ND		ROHM SemiconductorMOSFET N-CH 600V 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
  • 2500:$0.5040
ZDS020N60TB
DISTI # ZDS020N60TB		ROHM SemiconductorTrans MOSFET N-CH 600V 0.63A 8-Pin SOP T/R - Tape and Reel (Alt: ZDS020N60TB)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.3079
  • 15000:$0.3159
  • 10000:$0.3349
  • 5000:$0.3559
  • 2500:$0.3789
ZDS020N60TB
DISTI # 755-ZDS020N60TB		ROHM SemiconductorMOSFET 10V Drive Nch MOSFET
RoHS: Compliant		0
    Imagen Parte # Descripción
    ZDS020N60TB

    Mfr.#: ZDS020N60TB

    OMO.#: OMO-ZDS020N60TB

    		 MOSFET 10V Drive Nch MOSFET
    ZDS020

    Mfr.#: ZDS020

    OMO.#: OMO-ZDS020-1190

    		 Nuevo y original
    ZDS020N06

    Mfr.#: ZDS020N06

    OMO.#: OMO-ZDS020N06-1190

    		 Nuevo y original
    ZDS020N60

    Mfr.#: ZDS020N60

    OMO.#: OMO-ZDS020N60-1190

    		 Nuevo y original
    ZDS020N60TB

    Mfr.#: ZDS020N60TB

    OMO.#: OMO-ZDS020N60TB-ROHM-SEMI

    		 MOSFET N-CH 600V 8SOIC
    Disponibilidad
    Valores:
    Available
    En orden:
    5000
    Ingrese la cantidad:
    El precio actual de ZDS020N60TB es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,18 US$
    1,18 US$
    10
    1,00 US$
    10,00 US$
    100
    0,77 US$
    77,40 US$
    500
    0,68 US$
    342,00 US$
    1000
    0,54 US$
    539,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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