SI4464DY-T1

Mfr. #:: SI4464DY-T1
Fabricante:: Vishay Siliconix
Descripción:
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: SI4464DY-T1 Ficha de datos
Entrega:: DHL FedEx Ups TNT EMS
Pago:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Atributo del producto
Valor de atributo

Fabricante: Vishay Siliconix

categoria de producto: FET - Single

Serie: TrincheraFETR

embalaje: Embalaje alternativo de Digi-ReelR

Alias de parte: SI4464DY-T1

Unidad de peso: 0.006596 oz

Estilo de montaje: SMD / SMT

Nombre comercial: TrenchFET

Paquete-Estuche: 8-SOIC (0.154", 3.90mm Width)

Tecnología: Si

Temperatura de funcionamiento: -55°C ~ 150°C (TJ)

Tipo de montaje: Montaje superficial

Número de canales: 1 Channel

Paquete de dispositivo de proveedor: 8-SO

Configuración: Único

Tipo FET: Canal N MOSFET, óxido metálico

Potencia máxima: 1.5W

Tipo transistor: 1 N-Channel

Drenaje-a-fuente-voltaje-Vdss: 200V

Entrada-Capacitancia-Ciss-Vds: -

Función FET: Estándar

Corriente-Continuo-Drenaje-Id-25 ° C: 1.7A (Ta)

Rds-On-Max-Id-Vgs: 240 mOhm @ 2.2A, 10V

Vgs-th-Max-Id: 4V @ 250μA

Puerta-Carga-Qg-Vgs: 18nC @ 10V

Disipación de potencia Pd: 1.5 W

Temperatura máxima de funcionamiento: + 150 C

Temperatura mínima de funcionamiento: - 55 C

Otoño: 12 ns

Hora de levantarse: 12 ns

Vgs-Puerta-Fuente-Voltaje: 20 V

Id-corriente-de-drenaje-continua: 1.7 A

Vds-Drain-Source-Breakdown-Voltage: 200 V

Resistencia a la fuente de desagüe de Rds: 240 mOhms

Polaridad del transistor: Canal N

Tiempo de retardo de apagado típico: 15 ns

Tiempo de retardo de encendido típico: 10 ns

Modo de canal: Mejora

Tags: SI4464DY-T1, SI4464D, SI4464, SI446, SI44, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

Parte #	Mfg.	Descripción	Valores	Precio
SI4464DY-T1-E3 DISTI # SI4464DY-T1-E3CT-ND	Vishay Siliconix	MOSFET N-CH 200V 1.7A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	12469In Stock	1000:$0.5646 500:$0.7151 100:$0.9221 10:$1.1670 1:$1.3200
SI4464DY-T1-E3 DISTI # SI4464DY-T1-E3DKR-ND	Vishay Siliconix	MOSFET N-CH 200V 1.7A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	12469In Stock	1000:$0.5646 500:$0.7151 100:$0.9221 10:$1.1670 1:$1.3200
SI4464DY-T1-E3 DISTI # SI4464DY-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 200V 1.7A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	10000In Stock	2500:$0.5116
SI4464DY-T1-GE3 DISTI # SI4464DY-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 200V 1.7A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	30In Stock	1000:$0.5646 500:$0.7151 100:$0.9221 10:$1.1670 1:$1.3200
SI4464DY-T1-GE3 DISTI # SI4464DY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 200V 1.7A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	30In Stock	1000:$0.5646 500:$0.7151 100:$0.9221 10:$1.1670 1:$1.3200
SI4464DY-T1-GE3 DISTI # SI4464DY-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 200V 1.7A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	2500:$0.5116
SI4464DY-T1-E3 DISTI # SI4464DY-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 200V 1.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4464DY-T1-E3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.4749 5000:$0.4609 10000:$0.4419 15000:$0.4299 25000:$0.4179
SI4464DY-T1-E3 DISTI # SI4464DY-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 200V 1.7A 8-Pin SOIC N T/R (Alt: SI4464DY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.7209 5000:€0.4919 10000:€0.4229 15000:€0.3909 25000:€0.3639
SI4464DY-T1-GE3 DISTI # SI4464DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 200V 1.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4464DY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.4919 5000:$0.4769 10000:$0.4579 15000:$0.4449 25000:$0.4329
SI4464DY-T1-GE3 DISTI # SI4464DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 200V 1.7A 8-Pin SOIC N T/R (Alt: SI4464DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.7209 5000:€0.4919 10000:€0.4229 15000:€0.3909 25000:€0.3639
SI4464DY-T1-E3 DISTI # 35K3467	Vishay Intertechnologies	N CH MOSFET, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:1.7A,Drain Source Voltage Vds:200V,On Resistance Rds(on):195mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:2.5W , RoHS Compliant: Yes	0	1:$0.6250 2500:$0.6200 5000:$0.6020 10000:$0.5790
SI4464DY-T1-E3 DISTI # 06J7747	Vishay Intertechnologies	N CHANNEL MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:1.7A,Drain Source Voltage Vds:200V,On Resistance Rds(on):195mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:2.5W , RoHS Compliant: Yes	0	1:$1.4000 10:$1.1500 25:$1.0600 50:$0.9710 100:$0.8820 250:$0.8200 500:$0.7580
SI4464DY-T1-E3 DISTI # 70026108	Vishay Siliconix	MOSFET,Power,N-Ch,VDSS 200V,RDS(ON) 0.195Ohm,ID 1.7A,SO-8,PD 1.5W,VGS +/-20V RoHS: Compliant	1096	1:$0.9700 25:$0.9300 100:$0.8500 250:$0.8000 500:$0.7300
SI4464DY-T1-E3	Vishay Intertechnologies	RoHS: Compliant	2250Cut Tape/Mini-Reel	1:$0.7300 250:$0.6300 500:$0.6200 750:$0.6150 1500:$0.5950
SI4464DY-T1-E3	Vishay Intertechnologies	Single N-Channel 200 V 0.24 Ohms Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant	12500Reel	2500:$0.5350
SI4464DY-T1-E3 DISTI # 781-SI4464DY-T1-E3	Vishay Intertechnologies	MOSFET 200V Vds 20V Vgs SO-8 RoHS: Compliant	1524	1:$1.4000 10:$1.1500 100:$0.8820 500:$0.7580 1000:$0.5990 2500:$0.5590 5000:$0.5310 10000:$0.5190
SI4464DY-T1-GE3 DISTI # 781-SI4464DY-GE3	Vishay Intertechnologies	MOSFET 200V Vds 20V Vgs SO-8 RoHS: Compliant	2017	1:$1.4000 10:$1.1500 100:$0.8820 500:$0.7580 1000:$0.6660 2500:$0.6650
SI4464DY-T1-E3	Vishay Intertechnologies		2068
SI4464DY-T1-GE3 DISTI # 7103333P	Vishay Intertechnologies	MOSFET N-CHANNEL 200V 1.7A SOIC8, RL	160	25:£0.8360 125:£0.6860 625:£0.6400 1250:£0.5660
SI4464DY-T1-GE3 DISTI # 7103333	Vishay Intertechnologies	MOSFET N-CHANNEL 200V 1.7A SOIC8, PK	10	5:£1.0920 25:£0.8360 125:£0.6860 625:£0.6400 1250:£0.5660
SI4464DYT1GE3	Vishay Intertechnologies	RoHS: Compliant	Europe - 2500
SI4464DY-T1-E3	Vishay Intertechnologies	INSTOCK	2910
SI4464DY-T1-E3	Vishay Semiconductors	INSTOCK	2910
SI4464DY-T1-E3 DISTI # XSFP00000063472	Vishay Siliconix	RoHS: Compliant	9926	2500:$1.4600 9926:$1.3300
SI4464DY-T1-GE3.	Vishay Intertechnologies	200V, 240 MOHMS@10V	Americas - 400	10:$0.8800
SI4464DY-T1-GE3	Vishay Intertechnologies	MOSFET 200V Vds 20V Vgs SO-8	Americas - Stock

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Valores:: Available
En orden:: 4000
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Cantidad
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Ext. Precio

1: ~~0,00 US$~~; ~~0,00 US$~~

10: ~~0,00 US$~~; ~~0,00 US$~~

100: ~~0,00 US$~~; ~~0,00 US$~~

500: ~~0,00 US$~~; ~~0,00 US$~~

1000: ~~0,00 US$~~; ~~0,00 US$~~

Empezar con

SI4464DY-T1 4
SI4464D 5
SI4464 10
SI446 89
SI44 574
SI4 2994

SI4464DY-T1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes