RF1S30N06LE

RF1S30N06LE
Mfr. #:
RF1S30N06LE
Fabricante:
Rochester Electronics, LLC
Descripción:
Power Field-Effect Transistor, 30A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
RF1S30N06LE Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
RF1S30N06LE, RF1S30N0, RF1S30N, RF1S30, RF1S3, RF1S, RF1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
RF1S30N06LEHarris SemiconductorPower Field-Effect Transistor, 30A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RoHS: Not Compliant
1848
  • 1000:$0.7200
  • 500:$0.7600
  • 100:$0.7900
  • 25:$0.8300
  • 1:$0.8900
RF1S30N06LESM9AHarris SemiconductorPower Field-Effect Transistor, 30A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Not Compliant
1755
  • 1000:$1.4000
  • 500:$1.4700
  • 100:$1.5300
  • 25:$1.5900
  • 1:$1.7200
RF1S30N06LESM9AFairchild Semiconductor CorporationPower Field-Effect Transistor, 30A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Not Compliant
140296
    Imagen Parte # Descripción
    RF1S30N06LE

    Mfr.#: RF1S30N06LE

    OMO.#: OMO-RF1S30N06LE-1190

    Power Field-Effect Transistor, 30A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
    RF1S30N06LESM

    Mfr.#: RF1S30N06LESM

    OMO.#: OMO-RF1S30N06LESM-1190

    Nuevo y original
    RF1S30N06LESM9A

    Mfr.#: RF1S30N06LESM9A

    OMO.#: OMO-RF1S30N06LESM9A-1190

    Power Field-Effect Transistor, 30A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RF1S30N06LESMR4365

    Mfr.#: RF1S30N06LESMR4365

    OMO.#: OMO-RF1S30N06LESMR4365-1190

    Nuevo y original
    RF1S30N06LSM

    Mfr.#: RF1S30N06LSM

    OMO.#: OMO-RF1S30N06LSM-1190

    Nuevo y original
    RF1S30P05

    Mfr.#: RF1S30P05

    OMO.#: OMO-RF1S30P05-1190

    Power Field-Effect Transistor, 30A I(D), 50V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
    RF1S30P05SM9A

    Mfr.#: RF1S30P05SM9A

    OMO.#: OMO-RF1S30P05SM9A-1190

    Nuevo y original
    RF1S30P06SM

    Mfr.#: RF1S30P06SM

    OMO.#: OMO-RF1S30P06SM-1190

    Power Field-Effect Transistor, 30A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RF1S30P06SM9A

    Mfr.#: RF1S30P06SM9A

    OMO.#: OMO-RF1S30P06SM9A-1190

    MOSFET -60V Single
    RF1S30P06SM9AS

    Mfr.#: RF1S30P06SM9AS

    OMO.#: OMO-RF1S30P06SM9AS-1190

    Nuevo y original
    Disponibilidad
    Valores:
    Available
    En orden:
    3000
    Ingrese la cantidad:
    El precio actual de RF1S30N06LE es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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