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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| RF1S30N06LE | Harris Semiconductor | Power Field-Effect Transistor, 30A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Not Compliant | 1848 |
|
| RF1S30N06LESM9A | Harris Semiconductor | Power Field-Effect Transistor, 30A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 1755 |
|
| RF1S30N06LESM9A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 30A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 140296 |
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: RF1S30N06LE OMO.#: OMO-RF1S30N06LE-1190 |
Power Field-Effect Transistor, 30A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
|
Mfr.#: RF1S30N06LESM OMO.#: OMO-RF1S30N06LESM-1190 |
Nuevo y original |
|
Mfr.#: RF1S30N06LESM9A OMO.#: OMO-RF1S30N06LESM9A-1190 |
Power Field-Effect Transistor, 30A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
Mfr.#: RF1S30N06LESMR4365 OMO.#: OMO-RF1S30N06LESMR4365-1190 |
Nuevo y original |
|
Mfr.#: RF1S30N06LSM OMO.#: OMO-RF1S30N06LSM-1190 |
Nuevo y original |
|
Mfr.#: RF1S30P05 OMO.#: OMO-RF1S30P05-1190 |
Power Field-Effect Transistor, 30A I(D), 50V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
|
Mfr.#: RF1S30P05SM9A OMO.#: OMO-RF1S30P05SM9A-1190 |
Nuevo y original |
|
Mfr.#: RF1S30P06SM OMO.#: OMO-RF1S30P06SM-1190 |
Power Field-Effect Transistor, 30A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
Mfr.#: RF1S30P06SM9A OMO.#: OMO-RF1S30P06SM9A-1190 |
MOSFET -60V Single |
|
Mfr.#: RF1S30P06SM9AS OMO.#: OMO-RF1S30P06SM9AS-1190 |
Nuevo y original |