GS881E18CGD-200

GS881E18CGD-200
Mfr. #:
GS881E18CGD-200
Fabricante:
GSI Technology
Descripción:
SRAM 2.5 or 3.3V 512K x 18 9M
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
GS881E18CGD-200 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
GS881E18CGD-200 más información
Atributo del producto
Valor de atributo
Fabricante:
Tecnología GSI
Categoria de producto:
SRAM
RoHS:
Y
Tamaño de la memoria:
9 Mbit
Organización:
512 k x 18
Tiempo de acceso:
6.5 ns
Frecuencia máxima de reloj:
200 MHz
Tipo de interfaz:
Parallel
Voltaje de suministro - Máx:
3.6 V
Voltaje de suministro - Min:
2.3 V
Corriente de suministro - Máx .:
130 mA, 155 mA
Temperatura mínima de funcionamiento:
0 C
Temperatura máxima de funcionamiento:
+ 70 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
BGA-165
Embalaje:
Bandeja
Tipo de memoria:
SDR
Serie:
GS881E18CGD
Escribe:
Tubería DCD / Flujo continuo
Marca:
Tecnología GSI
Sensible a la humedad:
Yes
Tipo de producto:
SRAM
Cantidad de paquete de fábrica:
72
Subcategoría:
Memoria y almacenamiento de datos
Nombre comercial:
SyncBurst
Tags
GS881E18CGD-20, GS881E18CGD-2, GS881E18CGD, GS881E18CG, GS881E1, GS881E, GS881, GS88, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Dual 2.5V/3.3V 9M-Bit 512K x 18 6.5ns/3ns 165-Pin FBGA Tray
SyncBurst SRAMs
GSI Technology SyncBurst SRAMs are a broad portfolio of Synchronous Burst (SyncBurst™) SRAMs with fast clock rates and low power. SyncBurst SRAMs provide a "burst" of (typically) 2 to 4 words in response to a single clock signal. The devices' simplified interface is designed to use a data bus's maximum bandwidth. SyncBurst SRAMs are used in military, networking, industrial, automotive and medical imaging applications where a mid-range performance point is required.Learn More
Imagen Parte # Descripción
GS881E18CGD-150

Mfr.#: GS881E18CGD-150

OMO.#: OMO-GS881E18CGD-150

SRAM 2.5 or 3.3V 512K x 18 9M
GS881E18CGT-150IV

Mfr.#: GS881E18CGT-150IV

OMO.#: OMO-GS881E18CGT-150IV

SRAM 1.8/2.5V 512K x 18 9M
GS881E18CD-200

Mfr.#: GS881E18CD-200

OMO.#: OMO-GS881E18CD-200

SRAM 2.5 or 3.3V 512K x 18 9M
GS881E18CGT-150I

Mfr.#: GS881E18CGT-150I

OMO.#: OMO-GS881E18CGT-150I

SRAM 2.5 or 3.3V 512K x 18 9M
GS881E18CD-150I

Mfr.#: GS881E18CD-150I

OMO.#: OMO-GS881E18CD-150I

SRAM 2.5 or 3.3V 512K x 18 9M
GS881E18CD-250I

Mfr.#: GS881E18CD-250I

OMO.#: OMO-GS881E18CD-250I

SRAM 2.5 or 3.3V 512K x 18 9M
GS881E18CGT-200V

Mfr.#: GS881E18CGT-200V

OMO.#: OMO-GS881E18CGT-200V

SRAM 1.8/2.5V 512K x 18 9M
GS881E18CGT-200IV

Mfr.#: GS881E18CGT-200IV

OMO.#: OMO-GS881E18CGT-200IV

SRAM 1.8/2.5V 512K x 18 9M
GS881E18CD-200IV

Mfr.#: GS881E18CD-200IV

OMO.#: OMO-GS881E18CD-200IV

SRAM 1.8/2.5V 512K x 18 9M
GS881E18CD-250IV

Mfr.#: GS881E18CD-250IV

OMO.#: OMO-GS881E18CD-250IV

SRAM 1.8/2.5V 512K x 18 9M
Disponibilidad
Valores:
Available
En orden:
5000
Ingrese la cantidad:
El precio actual de GS881E18CGD-200 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
9,00 US$
9,00 US$
25
8,36 US$
209,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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