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BGA5L1BN6E6327XTSA1

BGA5L1BN6E6327XTSA1
Mfr. #:
BGA5L1BN6E6327XTSA1
Fabricante:
Infineon Technologies
Descripción:
IC RF AMP LTE
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BGA5L1BN6E6327XTSA1 Ficha de datos
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Más información:
BGA5L1BN6E6327XTSA1 más información
Atributo del producto
Valor de atributo
Tags
BGA5, BGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
RF Low Noise Amp Single 1000MHz 18.7dB 6-Pin TSNP T/R
***i-Key
IC RF AMP LTE
***ark
Low Noise Amp, 18.5Db, 1Ghz, 3.6V, Tsnp; Frequency Min:600Mhz; Frequency Max:1Ghz; Gain:18.5Db; Noise Figure Typ:0.7Db; Rf Ic Case Style:tsnp; No. Of Pins:6Pins; Supply Voltage Min:1.5V; Supply Voltage Max:3.6V; Operating Temperaturerohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. LOW NOISE AMP, 18.5DB, 1GHZ, 3.6V, TSNP; Frequency Min:600MHz; Frequency Max:1GHz; Gain:18.5dB; Noise Figure Typ:0.7dB; RF IC Case Style:TSNP; No. of Pins:6Pins; Supply Voltage Min:1.5V; Supply Voltage Max:3.6V; Operating Temperature Min:-40°C; Operating Temperature Max:85°C; Product Range:-; Automotive Qualification Standard:-; RoHS Phthalates Compliant:Yes; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
AMP. BASSO RUMORE 18.5DB 1GHZ, 3.6V TSNP; Frequenza Min:600MHz; Frequenza Max:1GHz; Guadagno:18.5dB; Figura di Rumore Tipica:0.7dB; Modello Case CI RF:TSNP; No. di Pin:6Pin; Tensione di Alimentazione Min:1.5V; Tensione di Alimentazione Max:3.6V; Temperatura di Esercizio Min:-40°C; Temperatura di Esercizio Max:85°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
The BGA5L1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 600 MHz to 1000 MHz. The LNA provides 18.5 dB gain and 0.7 dB noise figure at a current consumption of 8.2mA. In bypass mode the LNA provides an insertion loss of 2.7 dB. | Summary of Features: Operating frequencies: 600 - 1000 MHz; Insertion power gain: 18.5 dB; Insertion loss in bypass mode: 2.7 dB; Low noise figure: 0.7dB; Low current consumption: 8.2mA; Multi-state control: bypass- and high gain-mode; Ultra small TSNP-6-2 and TSNP-6-10 leadless package; RF output internally matched to 50 Ohm; Low external component count | Target Applications: LTE
BGA5x1BN6 Low-noise Amplifiers
Infineon Technologies BGA5x1BN6 Amplifier product family includes +18dBm high-gain, low-noise amplifiers that cover the low (600-1000MHz) mid (1805-2200MHz), and high-band (2300-2690MHz) frequency ranges. Based on Infineon Technologies‘ B9HF Silicon Germanium technology, the BGA5x1BN6 Amplifiers operate from a 1.5V to 3.6V supply voltage and offer single-line two-state control.  The amplifiers provide excellent low-noise performance and competitive insertion-loss levels. Designers can easily enable BGA5x1BN6's off-state mode by powering down the VCC. Available in an ultra-small leadless package measuring only 0.7 x 1.1mm2, the BGA5x1BN6 Amplifiers are ideal for smartphones running on the LTE or GSM network.
Parte # Mfg. Descripción Valores Precio
BGA5L1BN6E6327XTSA1
DISTI # V72:2272_19084594		Infineon Technologies AGBGA 5L1BN6 E632711900
  • 6000:$0.2237
  • 3000:$0.2262
  • 1000:$0.2477
  • 500:$0.2917
  • 250:$0.3155
  • 100:$0.3189
  • 25:$0.4770
  • 10:$0.5525
  • 1:$0.6737
BGA5L1BN6E6327XTSA1
DISTI # BGA5L1BN6E6327XTSA1TR-ND		Infineon Technologies AGIC RF AMP LTE
RoHS: Compliant
Min Qty: 12000
Container: Tape & Reel (TR)		On Order
  • 24000:$0.2046
  • 12000:$0.2104
BGA5L1BN6E6327XTSA1
DISTI # BGA5L1BN6E6327XTSA1CT-ND		Infineon Technologies AGIC RF AMP LTE
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 5000:$0.2304
  • 1000:$0.2599
  • 500:$0.3292
  • 250:$0.3725
  • 100:$0.4245
  • 25:$0.4852
  • 10:$0.5370
  • 1:$0.6100
BGA5L1BN6E6327XTSA1
DISTI # BGA5L1BN6E6327XTSA1DKR-ND		Infineon Technologies AGIC RF AMP LTE
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 5000:$0.2304
  • 1000:$0.2599
  • 500:$0.3292
  • 250:$0.3725
  • 100:$0.4245
  • 25:$0.4852
  • 10:$0.5370
  • 1:$0.6100
BGA5L1BN6E6327XTSA1
DISTI # 31978841		Infineon Technologies AGBGA 5L1BN6 E632712000
  • 12000:$0.2302
BGA5L1BN6E6327XTSA1
DISTI # 33710953		Infineon Technologies AGBGA 5L1BN6 E632711900
  • 31:$0.6737
BGA5L1BN6E6327XTSA1
DISTI # SP001685180		Infineon Technologies AGRF Low Noise Amp Single 1000MHz 18.7dB 6-Pin TSNP T/R (Alt: SP001685180)
RoHS: Compliant
Min Qty: 12000
Container: Tape and Reel		Europe - 12000
  • 120000:€0.2409
  • 72000:€0.2549
  • 48000:€0.2969
  • 24000:€0.3479
  • 12000:€0.4049
BGA5L1BN6E6327XTSA1
DISTI # BGA5L1BN6E6327XTSA1		Infineon Technologies AGRF SILICON MMIC - Tape and Reel (Alt: BGA5L1BN6E6327XTSA1)
RoHS: Compliant
Min Qty: 12000
Container: Reel		Americas - 0
  • 120000:$0.2089
  • 72000:$0.2129
  • 48000:$0.2199
  • 24000:$0.2289
  • 12000:$0.2369
BGA5L1BN6E6327XTSA1
DISTI # 60AC3536		Infineon Technologies AGLOW NOISE AMP, 18.5DB, 1GHZ, 3.6V, TSNP,Frequency Min:600MHz,Frequency Max:1GHz,Gain:18.5dB,Noise Figure Typ:0.7dB,RF IC Case Style:TSNP,No. of Pins:6Pins,Supply Voltage Min:1.5V,Supply Voltage Max:3.6V,Operating TemperatureRoHS Compliant: Yes11852
  • 1000:$0.2670
  • 500:$0.2890
  • 250:$0.3110
  • 100:$0.3330
  • 50:$0.3950
  • 25:$0.4560
  • 10:$0.5170
  • 1:$0.6260
BGA5L1BN6E6327XTSA1
DISTI # 726-BGA5L1BN6E6327XT		Infineon Technologies AGRF Amplifier RF SILICON MMIC
RoHS: Compliant		11325
  • 1:$0.6200
  • 10:$0.5120
  • 100:$0.3300
  • 1000:$0.2640
  • 2500:$0.2230
  • 12000:$0.2150
  • 24000:$0.2070
BGA5L1BN6E6327XTSA1
DISTI # XSKDRABV0030230		Infineon Technologies AGUDFN-8
RoHS: Compliant		36000 in Stock0 on Order
  • 36000:$0.3227
  • 12000:$0.3457
BGA5L1BN6E6327XTSA1
DISTI # 2888779		Infineon Technologies AGLOW NOISE AMP, 18.5DB, 1GHZ, 3.6V, TSNP11854
  • 500:£0.2080
  • 250:£0.2240
  • 100:£0.2410
  • 50:£0.3560
  • 1:£0.4080
BGA5L1BN6E6327XTSA1
DISTI # 2888779		Infineon Technologies AGLOW NOISE AMP, 18.5DB, 1GHZ, 3.6V, TSNP
RoHS: Compliant		11852
  • 1000:$0.3920
  • 500:$0.4970
  • 250:$0.5620
  • 100:$0.6400
  • 25:$0.7320
  • 10:$0.8090
  • 1:$0.9200
Imagen Parte # Descripción
BGA5L1BN6E6327XTSA1

Mfr.#: BGA5L1BN6E6327XTSA1

OMO.#: OMO-BGA5L1BN6E6327XTSA1

 RF Amplifier RF SILICON MMIC
BGA5L1BN6E6327XTSA1

Mfr.#: BGA5L1BN6E6327XTSA1

OMO.#: OMO-BGA5L1BN6E6327XTSA1-INFINEON-TECHNOLOGIES

 IC RF AMP LTE
Disponibilidad
Valores:
Available
En orden:
3000
Ingrese la cantidad:
El precio actual de BGA5L1BN6E6327XTSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,31 US$
0,31 US$
10
0,30 US$
2,95 US$
100
0,28 US$
27,95 US$
500
0,26 US$
131,95 US$
1000
0,25 US$
248,40 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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