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SI4166DY-T1-GE3

SI4166DY-T1-GE3
Mfr. #:
SI4166DY-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 30V Vds 20V Vgs SO-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4166DY-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4166DY-T1-GE3 DatasheetSI4166DY-T1-GE3 Datasheet (P4-P6)SI4166DY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Más información:
SI4166DY-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SO-8
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Altura:
1.75 mm
Longitud:
4.9 mm
Serie:
SI4
Ancho:
3.9 mm
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Parte # Alias:
SI4166DY-GE3
Unidad de peso:
0.006596 oz
Tags
SI4166DY-T, SI4166D, SI4166, SI416, SI41, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    T***r
    T***r
    DE

    Top! Works!

    2019-01-15
    E**u
    E**u
    PT

    works very well. recommend

    2019-04-11
    A***a
    A***a
    RU

    Works fine

    2019-04-14
***ure Electronics
Single N-Channel 30 V 3.9 mOhm 6.5 W Surface Mount Power Mosfet - SOIC-8
*** Source Electronics
MOSFET N-CH 30V 30.5A 8-SOIC / Trans MOSFET N-CH 30V 30.5A 8-Pin SOIC N T/R
***nell
MOSFET, N CH, 30V, 30.5A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:30.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0032ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:6.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-
TrenchFET® Gen III Power MOSFET
The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Parte # Mfg. Descripción Valores Precio
SI4166DY-T1-GE3
DISTI # SI4166DY-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 30.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1130In Stock
  • 1000:$0.7138
  • 500:$0.9041
  • 100:$1.1659
  • 10:$1.4750
  • 1:$1.6700
SI4166DY-T1-GE3
DISTI # SI4166DY-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 30.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1130In Stock
  • 1000:$0.7138
  • 500:$0.9041
  • 100:$1.1659
  • 10:$1.4750
  • 1:$1.6700
SI4166DY-T1-GE3
DISTI # SI4166DY-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 30.5A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$0.6468
SI4166DY-T1-GE3
DISTI # SI4166DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 20.5A 8-Pin SOIC N T/R (Alt: SI4166DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    SI4166DY-T1-GE3
    DISTI # SI4166DY-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 20.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4166DY-T1-GE3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 2500:$0.6329
    • 5000:$0.6319
    • 10000:$0.6299
    • 15000:$0.6279
    • 25000:$0.6269
    SI4166DY-T1-GE3
    DISTI # SI4166DY-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 20.5A 8-Pin SOIC N T/R (Alt: SI4166DY-T1-GE3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Europe - 0
    • 2500:€0.6869
    • 5000:€0.4689
    • 10000:€0.4029
    • 15000:€0.3719
    • 25000:€0.3469
    SI4166DY-T1-GE3
    DISTI # 85W3205    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 20.5A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 85W3205)
    RoHS: Compliant
    Min Qty: 1
    Container: Ammo Pack    		Americas - 0
    • 1:$0.7990
    SI4166DY-T1-GE3
    DISTI # 97W2647    		Vishay IntertechnologiesMOSFET, N CH, 30V, 30.5A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:30.5A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0032ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V,Power , RoHS Compliant: Yes2250
    • 1:$1.4700
    • 10:$1.2100
    • 25:$1.1200
    • 50:$1.0200
    • 100:$0.9290
    • 500:$0.7990
    • 1000:$0.7010
    SI4166DY-T1-GE3
    DISTI # 781-SI4166DY-T1-GE3    		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8
    RoHS: Compliant    		4268
    • 1:$1.4700
    • 10:$1.2100
    • 100:$0.9290
    • 500:$0.7990
    • 1000:$0.7560
    • 2500:$0.7000
    SI4166DY-T1-GE3
    DISTI # 2335305    		Vishay IntertechnologiesMOSFET, N CH, 30V, 30.5A, SOIC
    RoHS: Compliant    		2250
    • 1:$2.3400
    • 10:$1.9200
    • 100:$1.4700
    • 500:$1.2600
    • 1000:$1.1200
    • 2500:$1.1100
    SI4166DY-T1-GE3
    DISTI # 2335305    		Vishay IntertechnologiesMOSFET, N CH, 30V, 30.5A, SOIC
    RoHS: Compliant    		4741
    • 5:£1.1300
    • 25:£0.9270
    • 100:£0.7100
    • 250:£0.6610
    • 500:£0.6100
    SI4166DY-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8
    RoHS: Compliant    		Americas - 5000
    • 2500:$0.4080
    • 5000:$0.3860
    • 10000:$0.3730
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    Disponibilidad
    Valores:
    Available
    En orden:
    1986
    Ingrese la cantidad:
    El precio actual de SI4166DY-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,47 US$
    1,47 US$
    10
    1,21 US$
    12,10 US$
    100
    0,93 US$
    92,90 US$
    500
    0,80 US$
    399,50 US$
    1000
    0,76 US$
    756,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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