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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| BSC018NE2LSIATMA1 DISTI # BSC018NE2LSIATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 25V 29A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 27In Stock |
|
| BSC018NE2LSIATMA1 DISTI # BSC018NE2LSIATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 25V 29A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 27In Stock |
|
| BSC018NE2LSIATMA1 DISTI # BSC018NE2LSIATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 25V 29A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | On Order |
|
| BSC018NE2LSIATMA1 DISTI # BSC018NE2LSI | Infineon Technologies AG | Trans MOSFET N-CH 25V 29A 8-Pin TDSON EP (Alt: BSC018NE2LSI) RoHS: Compliant Min Qty: 5000 | Asia - 0 | |
| BSC018NE2LSIATMA1 DISTI # BSC018NE2LSIATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 25V 29A 8-Pin TDSON EP - Tape and Reel (Alt: BSC018NE2LSIATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC018NE2LSIATMA1 DISTI # 34AC1374 | Infineon Technologies AG | MOSFET, N-CH, 25V, 100A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0015ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power DissipationRoHS Compliant: Yes | 4867 |
|
| BSC018NE2LSI | Infineon Technologies AG | Power Field-Effect Transistor, 29A I(D), 25V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 4415 |
|
| BSC018NE2LSI DISTI # 726-BSC018NE2LSI | Infineon Technologies AG | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS RoHS: Compliant | 987 |
|
| BSC018NE2LSIXT DISTI # 726-BSC018NE2LSIATMA | Infineon Technologies AG | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS RoHS: Compliant | 0 |
|
| BSC018NE2LSI | Infineon Technologies AG | 8481 | ||
| BSC018NE2LSIATMA1 DISTI # BSC018NE2LSIATMA1 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,25V,29A,69W,PG-TDSON-8 | 5048 |
|
| BSC018NE2LSIATMA1 DISTI # 2781051 | Infineon Technologies AG | MOSFET, N-CH, 25V, 100A, TDSON RoHS: Compliant | 4867 |
|
| BSC018NE2LSIATMA1 DISTI # 2781051 | Infineon Technologies AG | MOSFET, N-CH, 25V, 100A, TDSON RoHS: Compliant | 4877 |
|
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: BSC018NE2LS OMO.#: OMO-BSC018NE2LS |
MOSFET N-Ch 25V 100A TDSON-8 OptiMOS |
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Mfr.#: BSC018N04LS G OMO.#: OMO-BSC018N04LS-G |
MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 |
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Mfr.#: BSC018NE2LSIXT OMO.#: OMO-BSC018NE2LSIXT |
MOSFET N-Ch 25V 100A TDSON-8 OptiMOS |
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Mfr.#: BSC018N04LSGXT OMO.#: OMO-BSC018N04LSGXT-1190 |
MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 |
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Mfr.#: BSC018NE2LSIXT OMO.#: OMO-BSC018NE2LSIXT-1190 |
MOSFET N-Ch 25V 100A TDSON-8 OptiMOS |
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Mfr.#: BSC018NE2LSG OMO.#: OMO-BSC018NE2LSG-1190 |
Nuevo y original |
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Mfr.#: BSC018NE2LSI BSC018NE2LS |
Nuevo y original |
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Mfr.#: BSC018NE2LSI QFN8 OMO.#: OMO-BSC018NE2LSI-QFN8-1190 |
Nuevo y original |
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Mfr.#: BSC018N04LS G OMO.#: OMO-BSC018N04LS-G-317 |
RF Bipolar Transistors MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 |
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Mfr.#: BSC018NE2LS OMO.#: OMO-BSC018NE2LS-317 |
RF Bipolar Transistors MOSFET N-Ch 25V 100A TDSON-8 OptiMOS |