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BSC159N10LSF G

BSC159N10LSF G
Mfr. #:
BSC159N10LSF G
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 2
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSC159N10LSF G Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
OptiMOS 2
embalaje
Carrete
Alias ​​de parte
BSC159N10LSFGATMA1 BSC159N10LSFGXT SP000379614
Estilo de montaje
SMD / SMT
Nombre comercial
OptiMOS
Paquete-Estuche
TDSON-8
Tecnología
Si
Número de canales
1 Channel
Configuración
Fuente triple de drenaje cuádruple simple
Tipo transistor
1 N-Channel
Disipación de potencia Pd
114 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
6 ns
Hora de levantarse
24 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
9.4 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Resistencia a la fuente de desagüe de Rds
15.9 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
28 ns
Tiempo de retardo de encendido típico
13 ns
Modo de canal
Mejora
Tags
BSC159N10LSFG, BSC159, BSC15, BSC1, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
BSC159N10LSFGATMA1
DISTI # BSC159N10LSFGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 63A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Limited Supply - Call
  • 5000:$1.0951
BSC159N10LSFGATMA1
DISTI # BSC159N10LSFGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 63A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    BSC159N10LSFGATMA1
    DISTI # BSC159N10LSFGATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 100V 63A TDSON-8
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      BSC159N10LSFGATMA1
      DISTI # BSC159N10LSFGATMA1      		Infineon Technologies AGTrans MOSFET N-CH 100V 9.4A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC159N10LSFGATMA1)
      RoHS: Compliant
      Min Qty: 5000
      Container: Reel      		Americas - 0
      • 5000:$1.1029
      • 10000:$1.0629
      • 20000:$1.0249
      • 30000:$0.9899
      • 50000:$0.9729
      BSC159N10LSFGATMA1
      DISTI # SP000379614      		Infineon Technologies AGTrans MOSFET N-CH 100V 9.4A 8-Pin TDSON T/R (Alt: SP000379614)
      RoHS: Compliant
      Min Qty: 5000
      Container: Tape and Reel      		Europe - 0
      • 5000:€1.2489
      • 10000:€1.0409
      • 20000:€0.9609
      • 30000:€0.8919
      • 50000:€0.8329
      BSC159N10LSF G
      DISTI # 60R2518      		Infineon Technologies AGMOSFET, N CHANNEL, 100V, 63A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:63A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0122ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.85V RoHS Compliant: Yes0
      • 1000:$1.1100
      • 500:$1.3400
      • 100:$1.5300
      • 10:$1.9100
      • 1:$2.2500
      BSC159N10LSF G
      DISTI # 726-BSC159N10LSFG      		Infineon Technologies AGMOSFET N-Ch 100V 63A TDSON-8 OptiMOS 2
      RoHS: Compliant      		0
        BSC159N10LSFGATMA1
        DISTI # N/A        		Infineon Technologies AGMOSFET MV POWER MOS0
          BSC159N10LSF G
          DISTI # 1775473          		Infineon Technologies AGMOSFET, N CH, 63A, 100V, PG-TDSON-8
          RoHS: Compliant          		0
          • 500:£1.0400
          • 250:£1.1200
          • 100:£1.1900
          • 10:£1.5000
          • 1:£1.9800
          BSC159N10LSF G
          DISTI # 1775473          		Infineon Technologies AGMOSFET, N CH, 63A, 100V, PG-TDSON-8
          RoHS: Compliant          		0
          • 5000:$1.6800
          • 1000:$1.6900
          • 500:$2.0300
          • 100:$2.3200
          • 10:$2.8900
          • 1:$3.4100
          Imagen Parte # Descripción
          BSC159N10LSF G

          Mfr.#: BSC159N10LSF G

          OMO.#: OMO-BSC159N10LSF-G

          		 MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 2
          BSC159N10LSF

          Mfr.#: BSC159N10LSF

          OMO.#: OMO-BSC159N10LSF-1190

          		 Nuevo y original
          BSC159N10LSFG

          Mfr.#: BSC159N10LSFG

          OMO.#: OMO-BSC159N10LSFG-1190

          		 Nuevo y original
          BSC159N10LSFGATMA1

          Mfr.#: BSC159N10LSFGATMA1

          OMO.#: OMO-BSC159N10LSFGATMA1-INFINEON-TECHNOLOGIES

          		 MOSFET N-CH 100V 63A TDSON-8
          BSC159N10LSF G

          Mfr.#: BSC159N10LSF G

          OMO.#: OMO-BSC159N10LSF-G-128

          		 MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 2
          Disponibilidad
          Valores:
          Available
          En orden:
          2500
          Ingrese la cantidad:
          El precio actual de BSC159N10LSF G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
          Precio de referencia (USD)
          Cantidad
          Precio unitario
          Ext. Precio
          1
          1,11 US$
          1,11 US$
          10
          1,06 US$
          10,59 US$
          100
          1,00 US$
          100,31 US$
          500
          0,95 US$
          473,65 US$
          1000
          0,89 US$
          891,60 US$
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