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IF1322B

IF1322B
Mfr. #:
IF1322B
Fabricante:
InterFET
Descripción:
JFET N-Ch Matched -20V 10mA 480mW 3.8mW
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IF1322B Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IF1322B más información
Atributo del producto
Valor de atributo
Fabricante:
InterFET
Categoria de producto:
JFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOIC-8
Polaridad del transistor:
Canal N
Configuración:
Doble
Vds - Voltaje de ruptura de drenaje-fuente:
10 V
Vgs - Voltaje de ruptura de puerta-fuente:
- 20 V
Corriente de drenaje-fuente a Vgs = 0:
25 mA
Id - Corriente de drenaje continua:
1 uA
Pd - Disipación de energía:
480 mW
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
IF132
Embalaje:
A granel
Escribe:
JFET
Marca:
InterFET
Transconductancia directa - Mín .:
0.01 mS
Voltaje de corte de puerta-fuente:
- 1.5 V
Cantidad de paquete de fábrica:
1
Unidad de peso:
0.019048 oz
Tags
IF1322, IF132, IF13, IF1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
IF1322 Matched Dual Junction Field-Effect Transistor (JFET)
InterFET IF1322 Matched Dual Junction Field-Effect Transistor (JFET) is a dual die matched pairs included in a single plastic surface mount package. This dual die approach helps to reduce crosstalk from the parasitic transistor created in the substrate between the gates of the monolithic devices. This process matches the adjacent die to stringent electrical characteristics to eliminate the parasitic transistor as a source of noise and only uses adjacent die to best improve the match. The IF1322 is based on InterFET's very low noise NJ132L geometry. By matching two adjacent NJ132 die to create this new device, it has allowed design engineers to utilize the high sensitivity and stability to create a high performing differential sensor input or a constant current supply.Learn More
Parte # Mfg. Descripción Valores Precio
IF1322B
DISTI # 106-IF1322B		InterFET CorporationJFET N-Ch Matched -20V 10mA 480mW 3.8mW
RoHS: Compliant		0
  • 1:$21.4200
  • 10:$18.0200
  • 100:$16.5800
  • 250:$15.1100
  • 500:$14.1300
IF1322B-TR
DISTI # 106-IF1322B-TR		InterFET CorporationJFET N-Ch Matched 40mV Dual Trans Reel/1000
RoHS: Compliant		0
  • 1000:$12.9600
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 JFET JFET N-Channel Reel of 1000
Disponibilidad
Valores:
Available
En orden:
3000
Ingrese la cantidad:
El precio actual de IF1322B es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
52
18,02 US$
937,04 US$
100
16,58 US$
1 658,00 US$
250
15,11 US$
3 777,50 US$
500
14,13 US$
7 065,00 US$
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