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SISS06DN-T1-GE3

SISS06DN-T1-GE3
Mfr. #:
SISS06DN-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 30V Vds; 20/-16V Vgs PowerPAK 1212-8S
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SISS06DN-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SISS06DN-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerPAK1212-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
172.6 A
Rds On - Resistencia de la fuente de drenaje:
1.38 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1 V
Vgs - Voltaje puerta-fuente:
20 V, - 16 V
Qg - Carga de puerta:
77 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
65.7 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
TrenchFET, PowerPAK
Embalaje:
Carrete
Serie:
SIS
Tipo de transistor:
1 N-Channel
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
95 S
Otoño:
10 ns
Tipo de producto:
MOSFET
Hora de levantarse:
8 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
30 ns
Tiempo típico de retardo de encendido:
13 ns
Tags
SISS0, SISS, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Parte # Mfg. Descripción Valores Precio
SISS06DN-T1-GE3
DISTI # V72:2272_22759348		Vishay IntertechnologiesN-Channel 30 V (D-S) MOSFET PowerPAK 1212-8S 1G SG 2 mil , 1.38 m @ 10Vm @ 7.5V 2.03 m @ 4.5V0
    SISS06DN-T1-GE3
    DISTI # SISS06DN-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CHAN 30 V POWERPAK 1212
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		50In Stock
    • 1000:$0.5353
    • 500:$0.6781
    • 100:$0.8209
    • 10:$1.0530
    • 1:$1.1800
    SISS06DN-T1-GE3
    DISTI # SISS06DN-T1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CHAN 30 V POWERPAK 1212
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		50In Stock
    • 1000:$0.5353
    • 500:$0.6781
    • 100:$0.8209
    • 10:$1.0530
    • 1:$1.1800
    SISS06DN-T1-GE3
    DISTI # SISS06DN-T1-GE3TR-ND    		Vishay SiliconixMOSFET N-CHAN 30 V POWERPAK 1212
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 15000:$0.4435
    • 6000:$0.4608
    • 3000:$0.4851
    SISS06DN-T1-GE3
    DISTI # SISS06DN-T1-GE3    		Vishay IntertechnologiesN-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SISS06DN-T1-GE3)
    RoHS: Compliant
    Min Qty: 6000
    Container: Reel    		Americas - 0
    • 60000:$0.4229
    • 30000:$0.4339
    • 18000:$0.4469
    • 12000:$0.4659
    • 6000:$0.4799
    SISS06DN-T1-GE3
    DISTI # 99AC9587    		Vishay IntertechnologiesMOSFET, N-CH, 30V, 172.6A, 150DEG C,Transistor Polarity:N Channel,Continuous Drain Current Id:172.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.00115ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power RoHS Compliant: Yes50
    • 500:$0.6340
    • 250:$0.6860
    • 100:$0.7370
    • 50:$0.8120
    • 25:$0.8860
    • 10:$0.9610
    • 1:$1.1600
    SISS06DN-T1-GE3
    DISTI # 81AC3499    		Vishay IntertechnologiesN-CHANNEL 30-V (D-S) MOSFET0
    • 10000:$0.4200
    • 6000:$0.4290
    • 4000:$0.4460
    • 2000:$0.4950
    • 1000:$0.5450
    • 1:$0.5680
    SISS06DN-T1-GE3
    DISTI # 78-SISS06DN-T1-GE3    		Vishay IntertechnologiesMOSFET 30V Vds,20/-16V Vgs PowerPAK 1212-8S
    RoHS: Compliant    		40
    • 1:$1.1500
    • 10:$0.9510
    • 100:$0.7300
    • 500:$0.6280
    • 1000:$0.4950
    • 3000:$0.4620
    • 6000:$0.4390
    • 9000:$0.4230
    SISS06DN-T1-GE3
    DISTI # 3019137    		Vishay IntertechnologiesMOSFET, N-CH, 30V, 172.6A, 150DEG C
    RoHS: Compliant    		50
    • 5000:$0.7440
    • 1000:$0.7490
    • 500:$0.9250
    • 250:$1.0200
    • 100:$1.1200
    • 25:$1.4200
    • 5:$1.5600
    SISS06DN-T1-GE3
    DISTI # 3019137    		Vishay IntertechnologiesMOSFET, N-CH, 30V, 172.6A, 150DEG C50
    • 500:£0.4550
    • 250:£0.4920
    • 100:£0.5290
    • 10:£0.7430
    • 1:£0.9470
    Imagen Parte # Descripción
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    Mfr.#: ADP3120AJRZ-RL

    OMO.#: OMO-ADP3120AJRZ-RL

    		 Gate Drivers 2 12V FET DRVR W/OUT DIS
    IX4340NE

    Mfr.#: IX4340NE

    OMO.#: OMO-IX4340NE

    		 Gate Drivers Dual 5A Gate Driver IC
    IX4340UE

    Mfr.#: IX4340UE

    OMO.#: OMO-IX4340UE

    		 Gate Drivers 5A Dual Low-Side MOSFET Driver
    IX4340NE

    Mfr.#: IX4340NE

    OMO.#: OMO-IX4340NE-IXYS-INTEGRATED-CIRCUITS-DIVIS

    		 5-AMP DUAL LOW-SIDE MOSFET DRIVE
    ADP3120AJRZ-RL

    Mfr.#: ADP3120AJRZ-RL

    OMO.#: OMO-ADP3120AJRZ-RL-ON-SEMICONDUCTOR

    		 IC MOSFET DRIVER DUAL 12V 8SOIC
    Disponibilidad
    Valores:
    40
    En orden:
    2023
    Ingrese la cantidad:
    El precio actual de SISS06DN-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,15 US$
    1,15 US$
    10
    0,95 US$
    9,51 US$
    100
    0,73 US$
    73,00 US$
    500
    0,63 US$
    314,00 US$
    1000
    0,50 US$
    495,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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