FCI7N60

FCI7N60
Mfr. #:
FCI7N60
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET HIGH POWER
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FCI7N60 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-262-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
7 A
Rds On - Resistencia de la fuente de drenaje:
600 mOhms
Vgs - Voltaje puerta-fuente:
30 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
83 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
SuperFET
Embalaje:
Tubo
Altura:
7.88 mm
Longitud:
10.29 mm
Serie:
FCI7N60
Tipo de transistor:
1 N-Channel
Ancho:
4.83 mm
Marca:
ON Semiconductor / Fairchild
Otoño:
32 ns
Tipo de producto:
MOSFET
Hora de levantarse:
55 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
75 ns
Tiempo típico de retardo de encendido:
35 ns
Unidad de peso:
0.073511 oz
Tags
FCI7, FCI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, I2PAK
***ure Electronics
Single N-Channel 600 V 0.6 Ohm 30 nC 83 W Silicon Through Hole Mosfet - TO-262
***ical
Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) I2PAK Rail
***o-Tech
MOSFET N-Channel 600V 7A SuperFET I2PAK
***i-Key
MOSFET N-CH 600V 7A I2PAK
***eco
TEW CREATED FOR SUZHOU <AZ
***ser
IGBTs HIGH_POWER
***ark
MOSFET, N CH, 600V, 7A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:83W; No. of Pins:3 ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N CH, 600V, 7A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-262; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Parte # Mfg. Descripción Valores Precio
FCI7N60
DISTI # 33134434
ON SemiconductorTrans MOSFET N-CH 600V 7A 3-Pin(3+Tab) I2PAK Tube1000
  • 1000:$0.9232
FCI7N60
DISTI # FCI7N60-ND
ON SemiconductorMOSFET N-CH 600V 7A I2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tube
Temporarily Out of Stock
  • 1000:$0.9232
FCI7N60
DISTI # V36:1790_06359887
ON SemiconductorTrans MOSFET N-CH 600V 7A 3-Pin(3+Tab) I2PAK Tube0
  • 1000000:$0.7350
  • 500000:$0.7354
  • 100000:$0.7915
  • 10000:$0.9037
  • 1000:$0.9232
FCI7N60
DISTI # FCI7N60
ON SemiconductorTrans MOSFET N-CH 600V 7A 3-Pin(3+Tab) I2PAK Rail - Rail/Tube (Alt: FCI7N60)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 10000:$0.7479
  • 5000:$0.7669
  • 3000:$0.7769
  • 2000:$0.7869
  • 1000:$0.7919
FCI7N60
DISTI # FCI7N60
ON SemiconductorTrans MOSFET N-CH 600V 7A 3-Pin(3+Tab) I2PAK Rail - Bulk (Alt: FCI7N60)
RoHS: Compliant
Min Qty: 348
Container: Bulk
Americas - 0
  • 3480:$0.8879
  • 1740:$0.9109
  • 1044:$0.9229
  • 696:$0.9349
  • 348:$0.9409
FCI7N60
DISTI # FCI7N60
ON SemiconductorTrans MOSFET N-CH 600V 7A 3-Pin(3+Tab) I2PAK Rail (Alt: FCI7N60)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€0.7979
  • 500:€0.8109
  • 100:€0.8229
  • 50:€0.8359
  • 25:€0.9209
  • 10:€1.0779
  • 1:€1.3179
FCI7N60
DISTI # 512-FCI7N60
ON SemiconductorMOSFET HIGH POWER
RoHS: Compliant
2994
  • 1:$1.7800
  • 10:$1.5100
  • 100:$1.2100
  • 500:$1.0600
  • 1000:$0.8790
  • 2000:$0.8660
FCI7N60Fairchild Semiconductor CorporationPower Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
398
  • 1000:$0.8800
  • 500:$0.9300
  • 100:$0.9700
  • 25:$1.0100
  • 1:$1.0900
FCI7N60Fairchild Semiconductor CorporationPower Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
200
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    Disponibilidad
    Valores:
    Available
    En orden:
    1985
    Ingrese la cantidad:
    El precio actual de FCI7N60 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,78 US$
    1,78 US$
    10
    1,51 US$
    15,10 US$
    100
    1,21 US$
    121,00 US$
    500
    1,06 US$
    530,00 US$
    1000
    0,88 US$
    879,00 US$
    2000
    0,87 US$
    1 732,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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