OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

NTD3817NT4G

NTD3817NT4G
Mfr. #:
NTD3817NT4G
Fabricante:
ON Semiconductor
Descripción:
MOSFET N-CH 16V 7.6A DPAK
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NTD3817NT4G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NTD3817NT4G DatasheetNTD3817NT4G Datasheet (P4-P6)NTD3817NT4G Datasheet (P7-P8)
ECAD Model:
Atributo del producto
Valor de atributo
Tags
NTD3817, NTD381, NTD38, NTD3, NTD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Power MOSFET 16V, 34.5A Single N-Channel
***ponent Stockers USA
7.6 A 16 V 0.029 ohm N-CHANNEL Si POWER MOSFET
***r Electronics
Power Field-Effect Transistor, 7.6A I(D), 16V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***emi
Power MOSFET 25V 44A 10.9 mOhm Single N Channel DPAK
***et
Trans MOSFET N-CH 25V 10.5A 3-Pin(2+Tab) DPAK T/R
***r Electronics
Power Field-Effect Transistor, 8.5A I(D), 25V, 0.0109ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***emi
Power MOSFET 25 V, 45 A, Single N-Channel, DPAK
***et
Trans MOSFET N-CH 25V 9.2A 3-Pin (2+Tab) DPAK T/R
***ser
MOSFETs- Power and Small Signal 25V 45A N-Channel
***r Electronics
Power Field-Effect Transistor, 7.8A I(D), 25V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:45A; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):11.7mohm; Rds(on) Test Voltage, Vgs:11.5V; Threshold Voltage, Vgs Typ:1.7V; Power Dissipation, Pd:50W ;RoHS Compliant: Yes
***ser
MOSFETs- Power and Small Signal 25V 45A N-Channel No-Cancel/No-Return
***r Electronics
Power Field-Effect Transistor, 32A I(D), 25V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***or
MOSFET N-CH 25V 7.8A/32A DPAK
*** Electronics
N-CHANNEL POWER MOSFET
***ure Electronics
Single N-Channel 55 V 0.04 Ohm 25 nC HEXFET® Power Mosfet - D2PAK
***(Formerly Allied Electronics)
MOSFET, 55V, 24A, 40 mOhm, 16.7 nC Qg, Logic Level, D-Pak
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***C
Trans MOSFET N-CH 55V 28A 3-Pin(2+Tab) DPAK Trans MOSFET N-CH 55V 28A 3-Pin(2+Tab) DPAK Trans MOSFET N-CH 55V 28A 3-Pin(2+Tab) DPAK
*** Stop Electro
Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
***nell
MOSFET, N-CH, 55V, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 28A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.04ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Di
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 28 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 40 / Gate-Source Voltage V = 16 / Fall Time ns = 29 / Rise Time ns = 100 / Turn-OFF Delay Time ns = 21 / Turn-ON Delay Time ns = 8.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 68
***ure Electronics
N-Channel 55 V 35 mOhm OptiMOS® Power-Transistor - PG-TO252-3-11
***ical
Trans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R
***ineon SCT
55V, N-Ch, 35 mΩ max, Automotive MOSFET, DPAK, OptiMOS™, PG-TO252-3, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 30A I(D), 55V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, AEC-Q101, N-CH, 55V, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.027ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V;
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
Parte # Mfg. Descripción Valores Precio
NTD3817NT4G
DISTI # NTD3817NT4G-ND		ON SemiconductorMOSFET N-CH 16V 7.6A DPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    NTD3817NT4GON SemiconductorPower Field-Effect Transistor, 7.6A I(D), 16V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		75000
    • 1000:$0.1700
    • 500:$0.1800
    • 100:$0.1900
    • 25:$0.2000
    • 1:$0.2100
    Imagen Parte # Descripción
    NTD3808N-1G

    Mfr.#: NTD3808N-1G

    OMO.#: OMO-NTD3808N-1G-ON-SEMICONDUCTOR

    		 MOSFET N-CH 16V 12A IPAK
    NTD3808N-35G

    Mfr.#: NTD3808N-35G

    OMO.#: OMO-NTD3808N-35G-ON-SEMICONDUCTOR

    		 MOSFET N-CH 16V 12A IPAK
    NTD3808NT4G

    Mfr.#: NTD3808NT4G

    OMO.#: OMO-NTD3808NT4G-ON-SEMICONDUCTOR

    		 MOSFET N-CH 16V 12A DPAK
    NTD3813N-1G

    Mfr.#: NTD3813N-1G

    OMO.#: OMO-NTD3813N-1G-ON-SEMICONDUCTOR

    		 MOSFET N-CH 16V 9.6A IPAK
    NTD3813N-35G

    Mfr.#: NTD3813N-35G

    OMO.#: OMO-NTD3813N-35G-ON-SEMICONDUCTOR

    		 MOSFET N-CH 16V 9.6A IPAK
    NTD3813NT4G

    Mfr.#: NTD3813NT4G

    OMO.#: OMO-NTD3813NT4G-ON-SEMICONDUCTOR

    		 MOSFET N-CH 16V 9.6A DPAK
    NTD3817N-1G

    Mfr.#: NTD3817N-1G

    OMO.#: OMO-NTD3817N-1G-ON-SEMICONDUCTOR

    		 MOSFET N-CH 16V 7.6A IPAK
    NTD3817N-35G

    Mfr.#: NTD3817N-35G

    OMO.#: OMO-NTD3817N-35G-ON-SEMICONDUCTOR

    		 MOSFET N-CH 16V 7.6A IPAK
    NTD3817NT4G

    Mfr.#: NTD3817NT4G

    OMO.#: OMO-NTD3817NT4G-ON-SEMICONDUCTOR

    		 MOSFET N-CH 16V 7.6A DPAK
    Disponibilidad
    Valores:
    Available
    En orden:
    5000
    Ingrese la cantidad:
    El precio actual de NTD3817NT4G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,00 US$
    0,00 US$
    10
    0,00 US$
    0,00 US$
    100
    0,00 US$
    0,00 US$
    500
    0,00 US$
    0,00 US$
    1000
    0,00 US$
    0,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
    Empezar con
    Top