BSC016N03MSGATMA1

BSC016N03MSGATMA1
Mfr. #:
BSC016N03MSGATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 30V 100A TDSON-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSC016N03MSGATMA1 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
FET - Single
Serie
OptiMOS
embalaje
Embalaje alternativo de Digi-ReelR
Paquete-Estuche
8-PowerTDFN
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Paquete de dispositivo de proveedor
PG-TDSON-8
Tipo FET
Canal N MOSFET, óxido metálico
Potencia máxima
125W
Drenaje-a-fuente-voltaje-Vdss
30V
Entrada-Capacitancia-Ciss-Vds
13000pF @ 15V
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
28A (Ta), 100A (Tc)
Rds-On-Max-Id-Vgs
1.6 mOhm @ 30A, 10V
Vgs-th-Max-Id
2V @ 250μA
Puerta-Carga-Qg-Vgs
173nC @ 10V
Tags
BSC016N03MSG, BSC016N03M, BSC016N03, BSC016, BSC01, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
BSC016N03MSGATMA1
DISTI # 31312055
Infineon Technologies AGTrans MOSFET N-CH 30V 28A 8-Pin TDSON EP T/R
RoHS: Compliant
5000
  • 5000:$0.5255
BSC016N03MSGATMA1
DISTI # BSC016N03MSGATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 30V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
On Order
  • 5000:$0.6949
BSC016N03MSGATMA1
DISTI # BSC016N03MSGATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 30V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$0.8073
  • 500:$1.0225
  • 100:$1.3185
  • 10:$1.6680
  • 1:$1.8800
BSC016N03MSGATMA1
DISTI # BSC016N03MSGATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 30V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$0.8073
  • 500:$1.0225
  • 100:$1.3185
  • 10:$1.6680
  • 1:$1.8800
BSC016N03MSGATMA1
DISTI # C1S322000464252
Infineon Technologies AGTrans MOSFET N-CH 30V 28A 8-Pin TDSON EP T/R
RoHS: Compliant
5000
  • 5000:$0.6360
BSC016N03MSGATMA1
DISTI # BSC016N03MSGATMA1
Infineon Technologies AGTrans MOSFET N-CH 30V 28A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC016N03MSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$0.6799
  • 10000:$0.6789
  • 20000:$0.6769
  • 30000:$0.6749
  • 50000:$0.6739
BSC016N03MSGATMA1
DISTI # 60R2473
Infineon Technologies AGMOSFET, N CH, 100A, 30V, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:30V,On Resistance Rds(on):1.3mohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:125W,Operating RoHS Compliant: Yes0
  • 1:$1.6000
  • 10:$1.3700
  • 100:$1.0500
  • 500:$0.9290
  • 1000:$0.8090
  • 2500:$0.6570
  • 10000:$0.6360
BSC016N03MS G
DISTI # 726-BSC016N03MSG
Infineon Technologies AGMOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M
RoHS: Compliant
6932
  • 1:$1.5600
  • 10:$1.3300
  • 100:$1.0300
  • 500:$0.9030
  • 1000:$0.7130
  • 5000:$0.6320
BSC016N03MSGATMA1
DISTI # BSC016N03MSGATMA1
Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,100A,125W,PG-TDSON-84821
  • 1:$0.8815
  • 5:$0.7920
  • 25:$0.7392
  • 100:$0.6864
BSC016N03MSGATMA1
DISTI # 1775423
Infineon Technologies AGMOSFET, N CH, 100A, 30V, PG-TDSON-8
RoHS: Compliant
1844
  • 5:£1.7300
  • 25:£1.4300
  • 100:£1.1300
  • 250:£1.0100
  • 500:£0.8790
Imagen Parte # Descripción
BSC016N06NS

Mfr.#: BSC016N06NS

OMO.#: OMO-BSC016N06NS

MOSFET N-Ch 60V 100A DSON-8 OptiMOS
BSC016N04LS G

Mfr.#: BSC016N04LS G

OMO.#: OMO-BSC016N04LS-G

MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
BSC016N03MSGATMA1

Mfr.#: BSC016N03MSGATMA1

OMO.#: OMO-BSC016N03MSGATMA1

MOSFET LV POWER MOS
BSC016N03LS

Mfr.#: BSC016N03LS

OMO.#: OMO-BSC016N03LS-1190

Nuevo y original
BSC016N03LSGXT

Mfr.#: BSC016N03LSGXT

OMO.#: OMO-BSC016N03LSGXT-1190

MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
BSC016N03MSG

Mfr.#: BSC016N03MSG

OMO.#: OMO-BSC016N03MSG-1190

Power Field-Effect Transistor, 28A I(D), 30V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSC016N04LSG

Mfr.#: BSC016N04LSG

OMO.#: OMO-BSC016N04LSG-1190

100 A, 40 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET
BSC016N04LSGATMA1

Mfr.#: BSC016N04LSGATMA1

OMO.#: OMO-BSC016N04LSGATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 40V 100A TDSON-8
BSC016N04LSGS

Mfr.#: BSC016N04LSGS

OMO.#: OMO-BSC016N04LSGS-1190

Nuevo y original
BSC016N03LSGATMA1

Mfr.#: BSC016N03LSGATMA1

OMO.#: OMO-BSC016N03LSGATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 30V 100A TDSON8
Disponibilidad
Valores:
Available
En orden:
3500
Ingrese la cantidad:
El precio actual de BSC016N03MSGATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,72 US$
0,72 US$
10
0,69 US$
6,87 US$
100
0,65 US$
65,06 US$
500
0,61 US$
307,20 US$
1000
0,58 US$
578,30 US$
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