PD55035S-E

PD55035S-E
Mfr. #:
PD55035S-E
Fabricante:
STMicroelectronics
Descripción:
RF MOSFET Transistors POWER RF Transistor
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
PD55035S-E Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
PD55035S-E DatasheetPD55035S-E Datasheet (P4-P6)PD55035S-E Datasheet (P7-P9)PD55035S-E Datasheet (P10-P12)PD55035S-E Datasheet (P13-P15)PD55035S-E Datasheet (P16-P18)PD55035S-E Datasheet (P19-P21)PD55035S-E Datasheet (P22)
ECAD Model:
Más información:
PD55035S-E más información PD55035S-E Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
Transistores RF MOSFET
RoHS:
Y
Polaridad del transistor:
Canal N
Tecnología:
Si
Id - Corriente de drenaje continua:
7 A
Vds - Voltaje de ruptura de drenaje-fuente:
40 V
Ganar:
16.9 dB
Potencia de salida:
35 W
Temperatura mínima de funcionamiento:
- 65 C
Temperatura máxima de funcionamiento:
+ 150 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerSO-10RF-Straight-4
Embalaje:
Tubo
Configuración:
Único
Altura:
3.5 mm
Longitud:
7.5 mm
Frecuencia de operación:
1 GHz
Serie:
PD55035-E
Escribe:
RF Power MOSFET
Ancho:
9.4 mm
Marca:
STMicroelectronics
Transconductancia directa - Mín .:
2.5 S
Modo de canal:
Mejora
Sensible a la humedad:
Yes
Pd - Disipación de energía:
95 W
Tipo de producto:
Transistores RF MOSFET
Cantidad de paquete de fábrica:
400
Subcategoría:
MOSFET
Vgs - Voltaje puerta-fuente:
20 V
Unidad de peso:
0.105822 oz
Tags
PD55035S, PD5503, PD550, PD55, PD5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    D***v
    D***v
    RU

    The order was received. only long went, but it is not the fault of the seller and the russian post. thanks to the seller, the goods are normal, and the equipment and in work.

    2019-01-22
    A***n
    A***n
    RU

    Came in 20 days, the plug is very tight

    2019-01-27
    E**x
    E**x
    RU

    Fast delivery, sociable seller, all as in the description!

    2019-03-31
    L***A
    L***A
    RU

    The quality of the goods from this seller as always on top

    2019-02-08
***ical
Trans RF MOSFET N-CH 40V 7A 3-Pin PowerSO-10RF (Straight lead)
***ser
RF & Microwave Transistors POWER RF Transistor
***ponent Stockers USA
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***emi
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***ure Electronics
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*** Stop Electro
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***rchild Semiconductor
This P-Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench® technology to deliver low rDS(on) and good switching characteristic offering superior performance in application.
***ical
Trans RF MOSFET N-CH 40V 8A 3-Pin(2+Tab) PowerSO-10RF (Formed lead) Tube
*** Source Electronics
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***th Star Micro
Transistor MOSFET N-CH 40V 7A 4-Pin (2+2Tab) PowerSO-10RF (Formed lead) Tube
***icroelectronics
35W 12.5V 500MHz LDMOS in PowerSO-10RF plastic package
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***icroelectronics SCT
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
***ical
Trans RF MOSFET N-CH 40V 8A 3-Pin PowerSO-10RF (Straight lead) Tube
***icroelectronics
35W 13.6V 870MHz LDMOS in PowerSO-10RF plastic package
***r Electronics
Power Field-Effect Transistor, 8A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
*** Electronic Components
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***ure Electronics
Si4447ADY Series 40 V 7.2 A 45 mOhm Surface Mount P-Channel Mosfet - SOIC-8
***roFlash
Small Signal Field-Effect Transistor, 7.2A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, P CH, W/D, 40V, 7.2A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-7.2A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:4.2W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
***(Formerly Allied Electronics)
SI4909DY-T1-GE3 Dual P-channel MOSFET Transistor; 6.5 A; 40 V; 8-Pin SOIC
***et Europe
Transistor MOSFET Array Dual P-CH 40V 8A 8-Pin SOIC T/R
***enic
40V 8A 27m´Î@10V8A 3.2W 2.5V@250Ã×A 2 P-Channel SOIC-8_150mil MOSFETs ROHS
***roFlash
Small Signal Field-Effect Transistor, 8A I(D), 40V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ment14 APAC
MOSFET, PP CH, W/D DIOD, 40V, 8A,SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.021ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:3.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; Continuous Drain Current Id, P Channel:-8A; Drain Source Voltage Vds, P Channel:-40V; Module Configuration:Dual; On Resistance Rds(on), P Channel:0.021ohm; Power Dissipation Pd:3.2W
Parte # Mfg. Descripción Valores Precio
PD55035S-E
DISTI # 27143827
STMicroelectronicsTrans RF MOSFET N-CH 40V 7A 3-Pin PowerSO-10RF (Straight lead)
RoHS: Compliant
250
  • 100:$20.3832
  • 50:$21.5822
PD55035S-E
DISTI # 497-5303-5-ND
STMicroelectronicsFET RF 40V 500MHZ PWRSO10
RoHS: Compliant
Min Qty: 400
Container: Tube
Temporarily Out of Stock
  • 400:$24.8530
PD55035S-E
DISTI # PD55035S-E
STMicroelectronicsTrans MOSFET N-CH 40V 7A 4-Pin(2+2Tab) PowerSO-10RF (Straight lead) - Bag (Alt: PD55035S-E)
RoHS: Compliant
Min Qty: 400
Container: Bag
Americas - 0
  • 400:$25.5900
  • 800:$24.3900
  • 1600:$23.2900
  • 2400:$22.2900
  • 4000:$21.7900
PD55035S-E
DISTI # 511-PD55035S-E
STMicroelectronicsRF MOSFET Transistors POWER RF Transistor
RoHS: Compliant
0
    PD55035STR-E
    DISTI # 511-PD55035STR-E
    STMicroelectronicsRF MOSFET Transistors POWER R.F.
    RoHS: Compliant
    0
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      OMO.#: OMO-PD55008S-E

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      OMO.#: OMO-PD55003-STMICROELECTRONICS

      FET RF 40V 500MHZ PWRSO-10
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      Mfr.#: PD55003S

      OMO.#: OMO-PD55003S-STMICROELECTRONICS

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      OMO.#: OMO-PD55015-1152

      RF MOSFET Transistors N-Ch 40 Volt 5 Amp
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      OMO.#: OMO-PD55035E-1190

      Nuevo y original
      PD55035STR-E

      Mfr.#: PD55035STR-E

      OMO.#: OMO-PD55035STR-E-STMICROELECTRONICS

      FET RF 40V 500MHZ PWRSO-10
      PD55008S-E

      Mfr.#: PD55008S-E

      OMO.#: OMO-PD55008S-E-STMICROELECTRONICS

      FET RF 40V 500MHZ PWRSO10
      Disponibilidad
      Valores:
      Available
      En orden:
      5000
      Ingrese la cantidad:
      El precio actual de PD55035S-E es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      33,08 US$
      33,08 US$
      5
      32,74 US$
      163,70 US$
      10
      30,51 US$
      305,10 US$
      25
      29,14 US$
      728,50 US$
      100
      26,06 US$
      2 606,00 US$
      250
      24,86 US$
      6 215,00 US$
      500
      23,66 US$
      11 830,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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