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IRFHM8363TRPBF

IRFHM8363TRPBF
Mfr. #:
IRFHM8363TRPBF
Fabricante:
Infineon Technologies
Descripción:
MOSFET 2N-CH 30V 11A 8PQFN
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRFHM8363TRPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
IRFHM8363TRPBF más información
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
FET: matrices
Serie
HEXFETR
embalaje
Tape & Reel (TR)
Estilo de montaje
SMD / SMT
Paquete-Estuche
8-PowerVDFN
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
2 Channel
Paquete de dispositivo de proveedor
8-PQFN (3.3x3.3), Power33
Configuración
Doble
Tipo FET
2 N-Channel (Dual)
Potencia máxima
2.7W
Tipo transistor
2 N-Channel
Drenaje-a-fuente-voltaje-Vdss
30V
Entrada-Capacitancia-Ciss-Vds
1165pF @ 10V
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
11A
Rds-On-Max-Id-Vgs
14.9 mOhm @ 10A, 10V
Vgs-th-Max-Id
2.35V @ 25μA
Puerta-Carga-Qg-Vgs
15nC @ 10V
Disipación de potencia Pd
2.7 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
33 ns
Hora de levantarse
94 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
11 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Vgs-th-Gate-Source-Threshold-Voltage
1.8 V
Resistencia a la fuente de desagüe de Rds
16.3 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
12 ns
Tiempo de retardo de encendido típico
14 ns
Qg-Gate-Charge
15 nC
Transconductancia directa-Mín.
20 S
Tags
IRFHM83, IRFHM8, IRFHM, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Dual PQFN HEXFET® Power MOSFETs
Infineon Dual PQFN HEXFET® Power MOSFETs integrate two HEXFET® MOSFETs utilizing their latest silicon technology to deliver a high density, cost effective solution for low power applications including smart phones, tablet PCs, camcorders, digital still cameras, DC motors and wireless inductive chargers as well as notebook PC, server and Netcom equipment. These Dual PQFN HEXFET® Power MOSFETs come in either a PQFN2x2 or PQFN3.3x3.3 which offer the flexibility of either common drain or half-bridge topologies. Utilizing their latest low-voltage silicon technologies (N and P), Infineon Dual PQFN HEXFET® Power MOSFETs deliver ultra-low losses.Learn More
Parte # Mfg. Descripción Valores Precio
IRFHM8363TRPBF
DISTI # V72:2272_13890764		Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin PQFN EP T/R4000
  • 3000:$0.2839
  • 1000:$0.3297
  • 500:$0.3973
  • 250:$0.4017
  • 100:$0.4061
  • 25:$0.5674
  • 10:$0.5745
  • 1:$0.6622
IRFHM8363TRPBF
DISTI # IRFHM8363TRPBF-ND		Infineon Technologies AGMOSFET 2N-CH 30V 11A 8PQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Limited Supply - Call
  • 4000:$0.3850
IRFHM8363TRPBF
DISTI # 30331789		Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin PQFN EP T/R4000
  • 3000:$0.2839
  • 1000:$0.3297
  • 500:$0.3973
  • 250:$0.4017
  • 100:$0.4061
  • 26:$0.5674
IRFHM8363TRPBF
DISTI # 30327790		Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin PQFN EP T/R4000
  • 24000:$0.2954
  • 8000:$0.3135
  • 4000:$0.3145
IRFHM8363TRPBF
DISTI # IRFHM8363TRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin QFN EP T/R (Alt: IRFHM8363TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Asia - 0
    IRFHM8363TRPBF
    DISTI # IRFHM8363TRPBF    		Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin QFN EP T/R - Tape and Reel (Alt: IRFHM8363TRPBF)
    RoHS: Compliant
    Min Qty: 4000
    Container: Reel    		Americas - 0
    • 4000:$0.2879
    • 8000:$0.2769
    • 16000:$0.2669
    • 24000:$0.2579
    • 40000:$0.2539
    IRFHM8363TRPBF
    DISTI # SP001565948    		Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin QFN EP T/R (Alt: SP001565948)
    RoHS: Compliant
    Min Qty: 4000
    Container: Tape and Reel    		Europe - 0
    • 4000:€0.4219
    • 8000:€0.3449
    • 16000:€0.3159
    • 24000:€0.2919
    • 40000:€0.2709
    IRFHM8363TRPBF
    DISTI # 05W5523    		Infineon Technologies AGMOSFET Transistor, Dual N Channel, 10 A, 30 V, 0.0122 ohm, 10 V, 1.8 V , RoHS Compliant: Yes966
    • 1:$0.8300
    • 10:$0.7000
    • 100:$0.5380
    • 500:$0.4760
    • 1000:$0.3750
    IRFHM8363TRPBF
    DISTI # 942-IRFHM8363TRPBF    		Infineon Technologies AGMOSFET 30V DUAL N-CH HEXFET 14.9mOhms 15nC
    RoHS: Compliant    		3630
    • 1:$0.8300
    • 10:$0.7000
    • 100:$0.5380
    • 500:$0.4760
    • 1000:$0.3750
    • 4000:$0.3330
    • 8000:$0.3210
    • 24000:$0.3100
    IRFH8363TRPBF
    DISTI # IRFHM8363TRPBF    		Infineon Technologies AGTransistor: N-MOSFET x2,unipolar,30V,11A,2.7W,PQFN3.3X3.32922
    • 1:$0.6700
    • 3:$0.5900
    • 10:$0.5300
    • 100:$0.4900
    IRFHM8363TRPBF
    DISTI # 2114658    		Infineon Technologies AGMOSFET, DUAL, N-CH, 30V, 10A, PQFN
    RoHS: Compliant    		1224
    • 1:$1.4200
    IRFHM8363TRPBF
    DISTI # 2114658    		Infineon Technologies AGMOSFET, DUAL, N-CH, 30V, 10A, PQFN
    RoHS: Compliant    		1611
    • 5:£0.7520
    • 25:£0.6480
    • 100:£0.4880
    • 250:£0.4610
    • 500:£0.4320
    IRFHM8363TRPBF
    DISTI # C1S322000576751    		Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin PQFN EP T/R
    RoHS: Compliant    		4000
    • 250:$0.4017
    • 100:$0.4061
    • 25:$0.5674
    • 10:$0.5745
    IRFHM8363TRPBF
    DISTI # C1S322000579776    		Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin PQFN EP T/R
    RoHS: Compliant    		4000
    • 4000:$0.4590
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    IRFHM8329TRPBF

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    OMO.#: OMO-IRFHM8329TRPBF

    		 MOSFET MOSFET, 30V, 25A, 4 3nC Qg, PQFN 3.3x3.3
    IRFHM8342TRPBF

    Mfr.#: IRFHM8342TRPBF

    OMO.#: OMO-IRFHM8342TRPBF

    		 MOSFET 30V 3.8nC SGL N-CH HEXFET Pwr MOSFET
    IRFHM830TR2PBF

    Mfr.#: IRFHM830TR2PBF

    OMO.#: OMO-IRFHM830TR2PBF

    		 MOSFET MOSFT 30V 40A 3.8mOhm
    IRFHM8334TRPBF

    Mfr.#: IRFHM8334TRPBF

    OMO.#: OMO-IRFHM8334TRPBF-INFINEON-TECHNOLOGIES

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    IRFHM830TRPBF-CUT TAPE

    Mfr.#: IRFHM830TRPBF-CUT TAPE

    OMO.#: OMO-IRFHM830TRPBF-CUT-TAPE-1190

    		 Nuevo y original
    IRFHM8337TRPBF-CUT TAPE

    Mfr.#: IRFHM8337TRPBF-CUT TAPE

    OMO.#: OMO-IRFHM8337TRPBF-CUT-TAPE-1190

    		 Nuevo y original
    IRFHM830DTRPBF.

    Mfr.#: IRFHM830DTRPBF.

    OMO.#: OMO-IRFHM830DTRPBF--1190

    		 Nuevo y original
    IRFHM8329TRPBF

    Mfr.#: IRFHM8329TRPBF

    OMO.#: OMO-IRFHM8329TRPBF-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 30V 16A PQFN
    Disponibilidad
    Valores:
    Available
    En orden:
    2000
    Ingrese la cantidad:
    El precio actual de IRFHM8363TRPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,38 US$
    0,38 US$
    10
    0,36 US$
    3,62 US$
    100
    0,34 US$
    34,28 US$
    500
    0,32 US$
    161,85 US$
    1000
    0,30 US$
    304,70 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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