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STGB4M65DF2

STGB4M65DF2
Mfr. #:
STGB4M65DF2
Fabricante:
STMicroelectronics
Descripción:
IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 4 A low loss
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STGB4M65DF2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
STGB4M65DF2 más información STGB4M65DF2 Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
D2PAK-3
Estilo de montaje:
SMD / SMT
Configuración:
Único
Voltaje colector-emisor VCEO Max:
650 V
Voltaje de saturación colector-emisor:
1.6 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
8 A
Pd - Disipación de energía:
68 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
STGB4M65DF2
Corriente continua de colector Ic Max:
8 A
Marca:
STMicroelectronics
Corriente de fuga puerta-emisor:
+/- 250 uA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
1000
Subcategoría:
IGBT
Tags
STGB4, STGB, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
STM 650V M Series Trench Gate Field-Stop IGBTs
STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. The 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. They have an optimized design and are available in a tailored built-in anti-parallel diode.
Parte # Mfg. Descripción Valores Precio
STGB4M65DF2
DISTI # 497-16964-2-ND		STMicroelectronicsTRENCH GATE FIELD-STOP IGBT, M S
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.4550
  • 2000:$0.4778
  • 1000:$0.5119
STGB4M65DF2
DISTI # 497-16964-1-ND		STMicroelectronicsTRENCH GATE FIELD-STOP IGBT, M S
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 500:$0.6678
  • 100:$0.8084
  • 10:$1.0370
  • 1:$1.1600
STGB4M65DF2
DISTI # 497-16964-6-ND		STMicroelectronicsTRENCH GATE FIELD-STOP IGBT, M S
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 500:$0.6678
  • 100:$0.8084
  • 10:$1.0370
  • 1:$1.1600
STGB4M65DF2
DISTI # STGB4M65DF2		STMicroelectronicsTrans IGBT Chip N 650V 8A 3-Pin D2PAK T/R (Alt: STGB4M65DF2)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 10000:€0.5239
  • 6000:€0.5999
  • 4000:€0.7049
  • 2000:€0.8809
  • 1000:€1.3729
STGB4M65DF2
DISTI # STGB4M65DF2		STMicroelectronicsTrans IGBT Chip N 650V 8A 3-Pin D2PAK T/R - Bulk (Alt: STGB4M65DF2)
RoHS: Compliant
Min Qty: 2000
Container: Bulk		Americas - 0
  • 20000:$0.4149
  • 10000:$0.4229
  • 6000:$0.4429
  • 4000:$0.4639
  • 2000:$0.4869
STGB4M65DF2
DISTI # 20AC4194		STMicroelectronicsPTD HIGH VOLTAGE0
  • 1:$0.4070
STGB4M65DF2
DISTI # 511-STGB4M65DF2		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, M series 650 V, 4 A low loss
RoHS: Compliant		0
  • 1:$1.0600
  • 10:$0.9100
  • 100:$0.6990
  • 500:$0.6180
  • 1000:$0.4880
  • 2000:$0.4330
STGB4M65DF2
DISTI # IGBT2123		STMicroelectronicsIGBT 650V 4A1,6VD2PAKStock DE - 0Stock HK - 0Stock US - 0
  • 2000:$0.6228
  • 4000:$0.6126
  • 6000:$0.5667
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Mfr.#: STGB40H65FB

OMO.#: OMO-STGB40H65FB

 IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
STGB40V60F

Mfr.#: STGB40V60F

OMO.#: OMO-STGB40V60F

 IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
STGB4M65DF2

Mfr.#: STGB4M65DF2

OMO.#: OMO-STGB4M65DF2

 IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 4 A low loss
STGB40V60F

Mfr.#: STGB40V60F

OMO.#: OMO-STGB40V60F-STMICROELECTRONICS

 IGBT Transistors IGBT & Power Bipola
STGB4M65DF2

Mfr.#: STGB4M65DF2

OMO.#: OMO-STGB4M65DF2-STMICROELECTRONICS

 TRENCH GATE FIELD-STOP IGBT, M S
STGB40H65FB

Mfr.#: STGB40H65FB

OMO.#: OMO-STGB40H65FB-STMICROELECTRONICS

 IGBT BIPO 650V 40A D2PAK
Disponibilidad
Valores:
Available
En orden:
5000
Ingrese la cantidad:
El precio actual de STGB4M65DF2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,06 US$
1,06 US$
10
0,91 US$
9,10 US$
100
0,70 US$
69,90 US$
500
0,62 US$
309,00 US$
1000
0,49 US$
488,00 US$
2000
0,43 US$
866,00 US$
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