IPD30N10S3L-34

Mfr. #:: IPD30N10S3L-34
Fabricante:: Infineon Technologies
Descripción:: IGBT Transistors MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: IPD30N10S3L-34 Ficha de datos
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Más información:: IPD30N10S3L-34 más información

Atributo del producto
Valor de atributo

Fabricante: Infineon Technologies

categoria de producto: FET - Single

Serie: OptiMOS

embalaje: Embalaje alternativo de Digi-ReelR

Alias de parte: IPD30N10S3L34ATMA1 IPD30N10S3L34XT SP000261248

Unidad de peso: 0.139332 oz

Estilo de montaje: SMD / SMT

Nombre comercial: OptiMOS

Paquete-Estuche: TO-252-3, DPak (2 Leads + Tab), SC-63

Tecnología: Si

Temperatura de funcionamiento: -55°C ~ 175°C (TJ)

Tipo de montaje: Montaje superficial

Número de canales: 1 Channel

Paquete de dispositivo de proveedor: PG-TO252-3

Configuración: Único

Tipo FET: Canal N MOSFET, óxido metálico

Potencia máxima: 57W

Tipo transistor: 1 N-Channel

Drenaje-a-fuente-voltaje-Vdss: 100V

Entrada-Capacitancia-Ciss-Vds: 1976pF @ 25V

Función FET: Estándar

Corriente-Continuo-Drenaje-Id-25 ° C: 30A (Tc)

Rds-On-Max-Id-Vgs: 31 mOhm @ 30A, 10V

Vgs-th-Max-Id: 2.4V @ 29μA

Puerta-Carga-Qg-Vgs: 31nC @ 10V

Disipación de potencia Pd: 57 W

Temperatura máxima de funcionamiento: + 175 C

Temperatura mínima de funcionamiento: - 55 C

Otoño: 3 ns

Hora de levantarse: 4 ns

Vgs-Puerta-Fuente-Voltaje: 20 V

Id-corriente-de-drenaje-continua: 30 A

Vds-Drain-Source-Breakdown-Voltage: 100 V

Resistencia a la fuente de desagüe de Rds: 31 mOhms

Polaridad del transistor: Canal N

Tiempo de retardo de apagado típico: 18 ns

Tiempo de retardo de encendido típico: 6 ns

Modo de canal: Mejora

Tags: IPD30N10S3L-3, IPD30N10, IPD30N1, IPD30N, IPD30, IPD3, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD30N10S3L-34 Más información

75V to 100V N-Channel Automotive MOSFETs: Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8), TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
IPD30N10S3L34ATMA1 DISTI # V72:2272_06390917	Infineon Technologies AG	Trans MOSFET N-CH 100V 30A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	11	2501:$0.3198 75000:$0.3419 30000:$0.3420 15000:$0.3421 6000:$0.3422 3000:$0.3423 1:$0.3485 1000:$0.3798 500:$0.4838 250:$0.5209 100:$0.5461 50:$0.6014 25:$0.6683 10:$0.6937
IPD30N10S3L34ATMA1 DISTI # IPD30N10S3L34ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 100V 30A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	13997In Stock	1000:$0.4551 500:$0.5765 100:$0.7434 10:$0.9410 1:$1.0600
IPD30N10S3L34ATMA1 DISTI # IPD30N10S3L34ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 100V 30A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	13997In Stock	1000:$0.4551 500:$0.5765 100:$0.7434 10:$0.9410 1:$1.0600
IPD30N10S3L34ATMA1 DISTI # IPD30N10S3L34ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 100V 30A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	12500In Stock	2500:$0.4124
IPD30N10S3L34ATMA1 DISTI # 19522544	Infineon Technologies AG	Trans MOSFET N-CH 100V 30A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2500	2500:$0.3314
IPD30N10S3L-34 DISTI # IPD30N10S3L-34	Infineon Technologies AG	Trans MOSFET N-CH 100V 30A 3-Pin TO-252 T/R (Alt: IPD30N10S3L-34) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0	2500:$0.3657 5000:$0.3556 7500:$0.3459 12500:$0.3368 25000:$0.3325 62500:$0.3282 125000:$0.3241
IPD30N10S3L34ATMA1 DISTI # IPD30N10S3L34ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 100V 30A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD30N10S3L34ATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.3849 2502:$0.3709 5002:$0.3579 12500:$0.3459 25000:$0.3399
IPD30N10S3L34ATMA1 DISTI # SP000261248	Infineon Technologies AG	Trans MOSFET N-CH 100V 30A 3-Pin(2+Tab) TO-252 (Alt: SP000261248) RoHS: Compliant Min Qty: 2500	Europe - 0	2500:€0.5719 5000:€0.4849 10000:€0.4319 15000:€0.3889 25000:€0.3609
IPD30N10S3L34ATMA1 DISTI # 79X1436	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 100V, TO-252- 3,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0258ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V RoHS Compliant: Yes	0	1000:$0.4020 500:$0.5090 250:$0.5430 100:$0.5760 50:$0.6340 25:$0.6920 10:$0.7500 1:$0.8800
IPD30N10S3L34ATMA1 DISTI # 726-IPD30N10S3L34ATM	Infineon Technologies AG	MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T RoHS: Compliant	374	1:$0.8800 10:$0.7500 100:$0.5760 500:$0.5090 1000:$0.4020 2500:$0.3570
IPD30N10S3L-34 DISTI # 726-IPD30N10S3L34	Infineon Technologies AG	MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T RoHS: Compliant	0	1:$0.8800 10:$0.7500 100:$0.5760 500:$0.5090 1000:$0.4020 2500:$0.3570
IPD30N10S3L34ATMA1 DISTI # 7533018	Infineon Technologies AG	MOSFET N-CH 100V 30A OPTIMOS-T TO252, PK	180	10:£0.6120 30:£0.4690 130:£0.3680 630:£0.3220 1250:£0.2850
IPD30N10S3L34ATMA1 DISTI # 7533018P	Infineon Technologies AG	MOSFET N-CH 100V 30A OPTIMOS-T TO252, RL	1050	30:£0.4690 130:£0.3680 630:£0.3220 1250:£0.2850
IPD30N10S3L-34	Infineon Technologies AG	POWER FIELD-EFFECT TRANSISTOR, 30A I(D), 100V, 0.0418OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AB	50
IPD30N10S3L-34 DISTI # TMOSP9762	Infineon Technologies AG	N-CH 100V30A31mOhm TO252-3 RoHS: Compliant	Stock DE - 0Stock US - 0	2500:$0.5487 5000:$0.5173 7500:$0.4860 10000:$0.4390 15000:$0.4233
IPD30N10S3L34ATMA1 DISTI # 2432729	Infineon Technologies AG	MOSFET, N CH, 100V, 30A, TO-252-3 RoHS: Compliant	0	500:£0.3250 250:£0.3490 100:£0.3720 25:£0.4740 5:£0.6180
IPD30N10S3L34ATMA1 DISTI # 2432729RL	Infineon Technologies AG	MOSFET, N CH, 100V, 30A, TO-252-3 RoHS: Compliant	0	2500:$0.5650 1000:$0.6370 500:$0.8060 100:$0.9120 10:$1.1900 1:$1.4000
IPD30N10S3L34ATMA1 DISTI # 2432729	Infineon Technologies AG	MOSFET, N CH, 100V, 30A, TO-252-3 RoHS: Compliant	0	2500:$0.5650 1000:$0.6370 500:$0.8060 100:$0.9120 10:$1.1900 1:$1.4000

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: IPD30N12S3L31ATMA1 OMO.#: OMO-IPD30N12S3L31ATMA1	MOSFET N-CHANNEL 100+
	Mfr.#: IPD30N10S3L-34 OMO.#: OMO-IPD30N10S3L-34	MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T
	Mfr.#: IPD30N10S3L34ATMA1 OMO.#: OMO-IPD30N10S3L34ATMA1	MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T
	Mfr.#: IPD30N10S3L34ATMA1 OMO.#: OMO-IPD30N10S3L34ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 30A TO252-3
	Mfr.#: IPD30N12S3L31ATMA1 OMO.#: OMO-IPD30N12S3L31ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CHANNEL_100+
	Mfr.#: IPD30N10S3L34ATMA1-CUT TAPE OMO.#: OMO-IPD30N10S3L34ATMA1-CUT-TAPE-1190	Nuevo y original
	Mfr.#: IPD30N10S3L-34 , 2SD2153 OMO.#: OMO-IPD30N10S3L-34-2SD2153-1190	Nuevo y original
	Mfr.#: IPD30N10S3L-34(3N10L34) OMO.#: OMO-IPD30N10S3L-34-3N10L34--1190	Nuevo y original
	Mfr.#: IPD30N10S3L-34 OMO.#: OMO-IPD30N10S3L-34-126	IGBT Transistors MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T

Disponibilidad

Valores:: Available
En orden:: 2000
Ingrese la cantidad:

El precio actual de IPD30N10S3L-34 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,51 US$~~; ~~0,51 US$~~

10: ~~0,49 US$~~; ~~4,89 US$~~

100: ~~0,46 US$~~; ~~46,31 US$~~

500: ~~0,44 US$~~; ~~218,65 US$~~

1000: ~~0,41 US$~~; ~~411,60 US$~~

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IPD30N10S3L-34

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes