IRFH7446TRPbF

Mfr. #:: IRFH7446TRPbF
Fabricante:: Infineon / IR
Descripción:: MOSFET 40V 85A 3.3mOhm 65nC StrongIRFET
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: IRFH7446TRPbF Ficha de datos
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Más información:: IRFH7446TRPbF más información

Atributo del producto
Valor de atributo

Fabricante:: Infineon

Categoria de producto:: MOSFET

RoHS:: Y

Tecnología:: Si

Estilo de montaje:: SMD / SMT

Paquete / Caja:: PQFN-8

Polaridad del transistor:: Canal N

Vds - Voltaje de ruptura de drenaje-fuente:: 40 V

Id - Corriente de drenaje continua:: 117 A

Rds On - Resistencia de la fuente de drenaje:: 3.3 mOhms

Vgs th - Voltaje umbral puerta-fuente:: 3.9 V

Qg - Carga de puerta:: 98 nC

Temperatura mínima de funcionamiento:: - 55 C

Temperatura máxima de funcionamiento:: + 150 C

Pd - Disipación de energía:: 78 W

Modo de canal:: Mejora

Nombre comercial:: Fuerte IRFET

Embalaje:: Carrete

Altura:: 0.83 mm

Longitud:: 6 mm

Ancho:: 5 mm

Marca:: Infineon / IR

Transconductancia directa - Mín .:: 159 S

Otoño:: 26 ns

Tipo de producto:: MOSFET

Hora de levantarse:: 37 ns

Cantidad de paquete de fábrica:: 4000

Subcategoría:: MOSFET

Tiempo de retardo de apagado típico:: 33 ns

Tiempo típico de retardo de encendido:: 11 ns

Parte # Alias:: SP001577894

Unidad de peso:: 0.003210 oz

Tags: IRFH7446, IRFH74, IRFH7, IRFH, IRF

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

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IRFH7446TRPbF Descripción

***ure Electronics: Single N-Channel 40 V 3.3 mOhm 65 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***ark: T&R / MOSFET, 40V, 85A, 3.3 mOhm, 65 nC Qg, PQFN56

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a Lead Free PQFN 5mm x 6mm package, PG-TDSON-8, RoHS

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Push-Pull

***nell: MOSFET, N-CH, 40V, 85A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:85A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0025ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PQFN; No. of Pins:5; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 117 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 3.3 / Gate-Source Voltage V = 20 / Fall Time ns = 26 / Rise Time ns = 37 / Turn-OFF Delay Time ns = 33 / Turn-ON Delay Time ns = 11 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 78

***ical: Trans MOSFET N-CH Si 40V 123A Automotive 8-Pin QFN EP T/R

***ineon SCT: Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a PQFN 5 x 6 E package, PG-TDSON-8, RoHS

***: N-Channel 4 V 95A (Tc) 4.3W (Ta), 94W (Tc) Surface Mount 8-PQFN (5x6)

***ark: MOSFET, N CHANNEL, 40V, 95A, QFN-8

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 95A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

*** Electronic Components: MOSFET Automotive HEXFET COOLiRFET

***ineon: Target Applications: Relay Replacement; Window Lifter

***or: MOSFET N-CH 40V 95A TDSON-8-10

***S: French Electronic Distributor since 1988

***i-Key Marketplace: AUIRFN8403 - 20V-40V N-CHANNEL A

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS

***ark: TAPE AND REEL // MOSFET, 30V, 50A, 4.1 mOhm, 15nC Qg, PQFN5x6

***et Europe: Trans MOSFET N-CH 30V 23A 8-Pin PQFN EP T/R

***: N-Channel 3 V 23A (Ta), 9A (Tc) 3.6W (Ta), 54W (Tc) Surface Mount PQFN (5x6)

***ineon: Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 1.3C/W); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load ControlFET

***nell: MOSFET, N-CH, 30V, 50A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 54W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a PQFN package, PG-TDSON-8, RoHS

***: N-Channel 4 V 26A (Ta), 85A (Tc) 3.6W (Ta), 14W (Tc) Surface Mount 8-PQFN (5x6)

***ineon: Benefits: Low RDSon (less than 4.7mOhms @ Vgs = 4.5V) Lowers Conduction Losses; Low Thermal Resistance to PCB (less than 1.2C/W) Enables better thermal dissipation; 100% Rg tested for Increased Reliability; Low Profile (less than 0.9 mm) results in Increased Power Density; Industry-Standard Pinout for Multi-Vendor Compatibility; Compatible with Existing Surface Mount Techniques for Easier Manufacturing; Environmentally Friendlier RoHS Compliant Containing no Lead, no Bromide and no Halogen; MSL1, Industrial Qualification results in Increased Reliability | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs

***ernational Rectifier: 30V Single N-Channel HEXFET Power MOSFET in a 3mm X 3mm PQFN package

***(Formerly Allied Electronics): MOSFET, 30V, 16A, 7.1 MOHM, 9.6 NC QG, PQFN33

***et: Trans MOSFET N-CH 30V 16A 8-Pin QFN T/R

***ment14 APAC: MOSFET, N CH, 30V, 16A, PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Current Id Max:16mA; Package / Case:PQFN; Power Dissipation Pd:2.8W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V

***ernational Rectifier: -30V Single P-Channel HEXFET Power MOSFET in a PQFN 3mm x 3mm package

***(Formerly Allied Electronics): MOSFET, P-CHANNEL, -30V, -11A, 14.6 MOHM, 25VGS, PQFN3X3

***ment14 APAC: MOSFET,P CH,DIODE,30V,11A,PQFN33; Transistor Polarity:P Channel; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:-20V; Power Dissipation Pd:2.8W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:-11A; Power Dissipation Pd:2.8W; Voltage Vgs Max:-25V

IRFH7446TRPbF Más información

StrongIRFET™ Power MOSFETs: Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
IRFH7446TRPBF DISTI # V72:2272_13889743	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 117A 8-Pin QFN EP T/R RoHS: Compliant	4000	3000:$0.4869 1000:$0.5410 500:$0.6592 250:$0.7322 100:$0.7927 25:$0.9095 10:$0.9209 1:$1.0950
IRFH7446TRPBF DISTI # IRFH7446TRPBFCT-ND	Infineon Technologies AG	MOSFET N CH 40V 85A PQFN 5X6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3419In Stock	1000:$0.7096 500:$0.8988 100:$1.1589 10:$1.4660 1:$1.6600
IRFH7446TRPBF DISTI # IRFH7446TRPBFDKR-ND	Infineon Technologies AG	MOSFET N CH 40V 85A PQFN 5X6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3419In Stock	1000:$0.7096 500:$0.8988 100:$1.1589 10:$1.4660 1:$1.6600
IRFH7446TRPBF DISTI # IRFH7446TRPBFTR-ND	Infineon Technologies AG	MOSFET N CH 40V 85A PQFN 5X6 RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	On Order	4000:$0.6430
IRFH7446TRPBF DISTI # 29474714	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 117A 8-Pin QFN EP T/R RoHS: Compliant	4000	3000:$0.4869 1000:$0.5410 500:$0.6593 250:$0.7322 100:$0.7927 25:$0.8289 15:$0.9210
IRFH7446TRPBF DISTI # 31271665	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 117A 8-Pin QFN EP T/R RoHS: Compliant	4000	4000:$0.7383
IRFH7446TRPBF DISTI # IRFH7446TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 40V 117A 8-Pin PQFN T/R - Tape and Reel (Alt: IRFH7446TRPBF) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	4000:$0.4809 8000:$0.4629 16000:$0.4469 24000:$0.4319 40000:$0.4239
IRFH7446TRPBF DISTI # IRFH7446TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 40V 117A 8-Pin PQFN T/R (Alt: IRFH7446TRPBF) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Asia - 0
IRFH7446TRPBF DISTI # 55W4110	Infineon Technologies AG	MOSFET Transistor, N Channel, 85 A, 40 V, 0.0025 ohm, 10 V, 2.2 V RoHS Compliant: Yes	4552	1:$1.5900 10:$1.3700 100:$1.0700 500:$0.9540 1000:$0.7730
IRFH7446TRPBF DISTI # 70394766	Infineon Technologies AG	IRFH7446TRPBF N-channel MOSFET Transistor,85 A,40 V,8-Pin PQFN RoHS: Compliant	0	4000:$0.8000
IRFH7446TRPbF DISTI # 942-IRFH7446TRPBF	Infineon Technologies AG	MOSFET 40V 85A 3.3mOhm 65nC StrongIRFET RoHS: Compliant	11700	1:$1.3700 10:$1.1700 100:$0.8980 500:$0.7940 1000:$0.6270
IRFH7446TRPBF DISTI # 7769169P	Infineon Technologies AG	STRONGIRFET MOSFET N-CH 40V 85A PQFN8, RL	3320	15:£0.8400 30:£0.7700
IRFH7446TRPBF DISTI # 2253809	Infineon Technologies AG	MOSFET, N-CH, 40V, 85A, PQFN RoHS: Compliant	4552	1:$2.1700 10:$1.8500 100:$1.4200 500:$1.2600 1000:$0.9930 4000:$0.8800 8000:$0.8470
IRFH7446TRPBF DISTI # C1S322000490099	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 117A 8-Pin QFN EP T/R RoHS: Compliant	4000	100:$0.7551 50:$0.9180 25:$0.9224 10:$0.9268
IRFH7446TRPBF DISTI # C1S322000490105	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 117A 8-Pin QFN EP T/R RoHS: Compliant	4000	4000:$0.5660
IRFH7446TRPBF DISTI # 2253809	Infineon Technologies AG	MOSFET, N-CH, 40V, 85A, PQFN RoHS: Compliant	5042	5:£0.8480 25:£0.7780 100:£0.6860 250:£0.6470 500:£0.6070

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Disponibilidad

Valores:: Available
En orden:: 1992
Ingrese la cantidad:

El precio actual de IRFH7446TRPbF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~1,30 US$~~; ~~1,30 US$~~

10: ~~1,11 US$~~; ~~11,10 US$~~

100: ~~0,85 US$~~; ~~85,20 US$~~

500: ~~0,75 US$~~; ~~376,50 US$~~

1000: ~~0,59 US$~~; ~~594,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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IRFH7446TRPbF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
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