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BSC886N03LS G

BSC886N03LS G
Mfr. #:
BSC886N03LS G
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 30V 65A TDSON-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSC886N03LS G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TDSON-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
65 A
Rds On - Resistencia de la fuente de drenaje:
6 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
2.5 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Altura:
1.27 mm
Longitud:
5.9 mm
Serie:
BSC886N03
Tipo de transistor:
1 N-Channel
Ancho:
5.15 mm
Marca:
Infineon Technologies
Otoño:
3 ns
Tipo de producto:
MOSFET
Hora de levantarse:
3.2 ns
Cantidad de paquete de fábrica:
5000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
18 ns
Tiempo típico de retardo de encendido:
4.2 ns
Parte # Alias:
BSC886N03LSGATMA1 BSC886N3LSGXT SP000475950
Tags
BSC886N03LSG, BSC886, BSC8, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
BSC886N03LS G
DISTI # 30579819		Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R
RoHS: Compliant		10000
  • 77:$0.2856
BSC886N03LSGATMA1
DISTI # BSC886N03LSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 65A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4185In Stock
  • 1000:$0.3093
  • 500:$0.3866
  • 100:$0.5219
  • 10:$0.6770
  • 1:$0.7700
BSC886N03LSGATMA1
DISTI # BSC886N03LSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 65A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4185In Stock
  • 1000:$0.3093
  • 500:$0.3866
  • 100:$0.5219
  • 10:$0.6770
  • 1:$0.7700
BSC886N03LSGATMA1
DISTI # BSC886N03LSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 65A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$0.2533
BSC886N03LS G
DISTI # C1S322000282117		Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R
RoHS: Compliant		10000
  • 50:$0.2240
  • 10:$0.2630
BSC886N03LS G
DISTI # BSC886N03LS G		Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R (Alt: BSC886N03LS G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
    BSC886N03LS G
    DISTI # SP000475950    		Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R (Alt: SP000475950)
    RoHS: Compliant
    Min Qty: 5000
    Container: Tape and Reel    		Europe - 0
    • 5000:€0.3179
    • 10000:€0.2699
    • 20000:€0.2399
    • 30000:€0.2159
    • 50000:€0.2009
    BSC886N03LSGXT
    DISTI # BSC886N03LSGATMA1    		Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC886N03LSGATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel    		Americas - 0
    • 5000:$0.1959
    • 10000:$0.1889
    • 20000:$0.1819
    • 30000:$0.1759
    • 50000:$0.1729
    BSC886N03LSGATMA1
    DISTI # 97Y1253    		Infineon Technologies AGMOSFET, N-CH, 30V, 65A, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:65A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.005ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power , RoHS Compliant: Yes4977
    • 1:$0.8100
    • 10:$0.7070
    • 25:$0.6530
    • 50:$0.5990
    • 100:$0.5450
    • 250:$0.4750
    • 500:$0.4040
    • 1000:$0.3230
    BSC886N03LSGInfineon Technologies AGPower Field-Effect Transistor, 13A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		9609
    • 1000:$0.2500
    • 500:$0.2600
    • 100:$0.2700
    • 25:$0.2900
    • 1:$0.3100
    BSC886N03LS GInfineon Technologies AG 
    RoHS: Not Compliant    		5000
    • 1000:$0.2400
    • 500:$0.2500
    • 100:$0.2600
    • 25:$0.2700
    • 1:$0.2900
    BSC886N03LSGATMA1Infineon Technologies AGPower Field-Effect Transistor, 13A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		5000
    • 1000:$0.2400
    • 500:$0.2500
    • 100:$0.2600
    • 25:$0.2700
    • 1:$0.2900
    BSC886N03LS G
    DISTI # 726-BSC886N03LSG    		Infineon Technologies AGMOSFET N-Ch 30V 65A TDSON-8
    RoHS: Compliant    		0
    • 1:$0.6400
    • 10:$0.5290
    • 100:$0.3420
    • 1000:$0.2730
    • 5000:$0.2310
    BSC886N03LSGInfineon Technologies AG 1500
      BSC886N03LSGATMA1
      DISTI # 2617422      		Infineon Technologies AGMOSFET, N-CH, 30V, 65A, PG-TDSON-8
      RoHS: Compliant      		4977
      • 1:$1.2200
      • 10:$1.0800
      • 100:$0.8260
      • 500:$0.6120
      • 1000:$0.4900
      BSC886N03LSGATMA1
      DISTI # 2617422      		Infineon Technologies AGMOSFET, N-CH, 30V, 65A, PG-TDSON-8
      RoHS: Compliant      		4977
      • 5:£0.6100
      • 25:£0.5510
      • 100:£0.4190
      • 250:£0.3650
      • 500:£0.3100
      Imagen Parte # Descripción
      BSC886N03LS G

      Mfr.#: BSC886N03LS G

      OMO.#: OMO-BSC886N03LS-G

      		 MOSFET N-Ch 30V 65A TDSON-8
      BSC886N03LSGATMA1

      Mfr.#: BSC886N03LSGATMA1

      OMO.#: OMO-BSC886N03LSGATMA1

      		 MOSFET LV POWER MOS
      BSC886N03LS

      Mfr.#: BSC886N03LS

      OMO.#: OMO-BSC886N03LS-1190

      		 Nuevo y original
      BSC886N03LS G

      Mfr.#: BSC886N03LS G

      OMO.#: OMO-BSC886N03LS-G-1190

      		 Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R
      BSC886N03LSG

      Mfr.#: BSC886N03LSG

      OMO.#: OMO-BSC886N03LSG-1190

      		 Power Field-Effect Transistor, 13A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      BSC886N03LSG E8178

      Mfr.#: BSC886N03LSG E8178

      OMO.#: OMO-BSC886N03LSG-E8178-1190

      		 Nuevo y original
      BSC886N03LSGATMA1

      Mfr.#: BSC886N03LSGATMA1

      OMO.#: OMO-BSC886N03LSGATMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 65A TDSON-8
      BSC886N03LSGATMA1 , TDZF

      Mfr.#: BSC886N03LSGATMA1 , TDZF

      OMO.#: OMO-BSC886N03LSGATMA1-TDZF-1190

      		 Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      2000
      Ingrese la cantidad:
      El precio actual de BSC886N03LS G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,63 US$
      0,63 US$
      10
      0,53 US$
      5,29 US$
      100
      0,34 US$
      34,20 US$
      1000
      0,27 US$
      273,00 US$
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