PSMN1R1-40BS,118

Mfr. #:: PSMN1R1-40BS,118
Fabricante:: Nexperia
Descripción:: MOSFET N-CH 40V 120A D2PAK
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: PSMN1R1-40BS,118 Ficha de datos
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Más información:: PSMN1R1-40BS,118 más información

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Tags: PSMN1R1-4, PSMN1R1, PSMN1R, PSMN1, PSMN, PSM

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PSMN1R1-40BS,118 Descripción

***peria: PSMN1R1-40BS - N-channel 40 V 1.3 mΩ standard level MOSFET in D2PAK

***ical: Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) D2PAK T/R

***et: Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) D2PAK

***i-Key: MOSFET N CH 40V 120A D2PAK

***ark: Transistor Polarity:n Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(On):1.3Mohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:306W; No. Of Pins:3Pins

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 40V, 120A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00116ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:306W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C

***nell: MOSFET, CANALE N, 40V, 120A, D2PAK; Polarità Transistor:Canale N; Corrente Continua di Drain Id:120A; Tensione Drain Source Vds:40V; Resistenza di Attivazione Rds(on):0.00116ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:306W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Intervallo Temperatura di Esercizio:Da -55°C a +175°C; Temperatura di Esercizio Min:-55°C

PSMN1R1-40BS,118 Más información

PSMN N-Channel MOSFETs: Nexperia PSMN N-Channel MOSFETs include standard and logic level, regular and enhancement mode, N-Channel MOSFETs in LFPAK, I2PAK, TO-220, and DFN3333-8 packages qualified to 150°C or 175°C. These Nexperia PSMN N-Channel MOSFETs are designed and qualified for use in a wide range of industrial, communications, and domestic equipment. The Nexperia logic level enhancement mode N-Channel MOSFETs in LFPAK packages feature ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads, and ultra low RDS(on) and low parasitic inductance. They are also optimized for 4.5V gate drive utilizing NextPower Superjunction technology. The Nexperia standard and logic level N-Channel MOSFETs in I2PAK and TO-220 packages feature high efficiency due to low switching and conduction losses and are suitable for standard or logic level gate drive sources.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
PSMN1R1-40BS,118 DISTI # V72:2272_06540844	Nexperia	PSMN1R1-40BS/D2PAK/REEL13//	0
PSMN1R1-40BS,118 DISTI # V36:1790_06540844	Nexperia	PSMN1R1-40BS/D2PAK/REEL13//	0	4800000:$1.2050 2400000:$1.2070 480000:$1.3800 48000:$1.6690 4800:$1.7170
PSMN1R1-40BS,118 DISTI # 1727-7105-1-ND	Nexperia	MOSFET N-CH 40V 120A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2225In Stock	100:$2.0776 10:$2.5360 1:$2.8200
PSMN1R1-40BS,118 DISTI # 1727-7105-6-ND	Nexperia	MOSFET N-CH 40V 120A D2PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2225In Stock	100:$2.0776 10:$2.5360 1:$2.8200
PSMN1R1-40BS,118 DISTI # 1727-7105-2-ND	Nexperia	MOSFET N-CH 40V 120A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR)	1600In Stock	2400:$1.3758 1600:$1.4482 800:$1.7171
PSMN1R1-40BS118 DISTI # PSMN1R1-40BS118	Avnet, Inc.	- Bulk (Alt: PSMN1R1-40BS118) Min Qty: 243 Container: Bulk	Americas - 0	1215:$1.1900 2430:$1.1900 243:$1.2900 486:$1.2900 729:$1.2900
PSMN1R1-40BS,118 DISTI # PSMN1R1-40BS,118	Nexperia	Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) D2PAK (Alt: PSMN1R1-40BS,118) RoHS: Compliant Min Qty: 800	Europe - 0	8000:€1.0209 4800:€1.0939 3200:€1.1779 1600:€1.2769 800:€1.5319
PSMN1R1-40BS,118 DISTI # PSMN1R1-40BS,118	Nexperia	Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) D2PAK - Tape and Reel (Alt: PSMN1R1-40BS,118) RoHS: Compliant Min Qty: 4800 Container: Reel	Americas - 0	24000:$1.1900 48000:$1.1900 4800:$1.2900 9600:$1.2900 14400:$1.2900
PSMN1R1-40BS,118. DISTI # 28AC1197	Nexperia	Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:40V,On Resistance Rds(on):1.3mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:306W,No. of Pins:3Pins	0	24000:$1.1900 1:$1.2900
PSMN1R1-40BS,118 DISTI # 05W5712	Nexperia	MOSFET, N CHANNEL, 40V, 120A, D2PAK,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.00116ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	0	500:$1.7400 250:$1.9400 100:$2.0400 50:$2.1400 25:$2.2500 10:$2.3500 1:$2.7700
PSMN1R1-40BS,118 DISTI # 771-PSMN1R1-40BS,118	Nexperia	MOSFET Std N-chanMOSFET RoHS: Compliant	0	1:$2.7400 10:$2.3300 100:$2.0200 250:$1.9200 500:$1.7200 800:$1.4500 2400:$1.3800 4800:$1.3300
PSMN1R1-40BS118	NXP Semiconductors	Now Nexperia PSMN1R1-40BS - Power Field-Effect Transistor, 120A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK RoHS: Not Compliant	120	1000:$1.3600 500:$1.4300 100:$1.4900 25:$1.5500 1:$1.6700
PSMN1R1-40BS,118 DISTI # 2114711	Nexperia	MOSFET, N-CH, 40V, 120A, D2PAK RoHS: Compliant	0	500:£1.1500 250:£1.5300 100:£1.6000 10:£1.8500 1:£2.4500
PSMN1R1-40BS,118 DISTI # 2114711	Nexperia	MOSFET, N-CH, 40V, 120A, D2PAK RoHS: Compliant	879	2500:$1.7700 1000:$1.8500 500:$1.9500 250:$2.0600 100:$2.1800 25:$2.3700 10:$2.6500 1:$2.9300

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	Mfr.#: PSMN1R1-40BS118 OMO.#: OMO-PSMN1R1-40BS118-1190	- Bulk (Alt: PSMN1R1-40BS118)
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PSMN1R1-40BS,118

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes