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IPW60R031CFD7XKSA1

IPW60R031CFD7XKSA1
Mfr. #:
IPW60R031CFD7XKSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET HIGH POWER_NEW
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPW60R031CFD7XKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPW60R031CFD7XKSA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
63 A
Rds On - Resistencia de la fuente de drenaje:
26 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3.5 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
141 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
278 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
CoolMOS
Embalaje:
Tubo
Serie:
CoolMOS CFD7
Tipo de transistor:
1 N-Channel
Marca:
Infineon Technologies
Otoño:
6 ns
Tipo de producto:
MOSFET
Hora de levantarse:
27 ns
Cantidad de paquete de fábrica:
240
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
175 ns
Tiempo típico de retardo de encendido:
48 ns
Parte # Alias:
IPW60R031CFD7 SP001617992
Tags
IPW60R03, IPW60R0, IPW60, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
CoolMOS CFD7 Power Transistor High Power 31mΩ 278W 600V PG-TO 247-3
***ark
Mosfet, N-Ch, 600V, 63A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:63A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.026Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes
***ineon
Summary of Features: Ultra-fast body diode; Best-in-class reverse recovery charge (Qrr); Improved reverse diode dv/dt and dif/dt ruggedness; Lowest FOM RDS(on) x Qg and Eoss; Best-in-class RDS(on)/package combinations | Benefits: Best-in-class hard commutation ruggedness; Highest reliability for resonant topologies; Highest efficiency with outstanding ease-of-use/performance trade-off; Enabling increased power density solutions | Target Applications: Target Applications:
CFD7 CoolMOS™ MOSFETs
Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power SMPS applications include server, telecom and EV charging stations.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Parte # Mfg. Descripción Valores Precio
IPW60R031CFD7XKSA1
DISTI # 33792058		Infineon Technologies AGHIGH POWER_NEW240
  • 2:$7.6931
IPW60R031CFD7XKSA1
DISTI # IPW60R031CFD7XKSA1-ND		Infineon Technologies AGMOSFET N-CH 600V TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		230In Stock
  • 720:$9.3515
  • 240:$10.5124
  • 25:$11.9312
  • 10:$12.4470
  • 1:$13.5400
IPW60R031CFD7XKSA1
DISTI # V99:2348_18786388		Infineon Technologies AGHIGH POWER_NEW0
  • 240000:$7.6910
  • 120000:$7.6960
  • 24000:$8.4100
  • 2400:$9.8900
  • 240:$10.1500
IPW60R031CFD7XKSA1
DISTI # V36:1790_18786388		Infineon Technologies AGHIGH POWER_NEW0
  • 240000:$7.1550
  • 120000:$7.1600
  • 24000:$8.0130
  • 2400:$9.8280
  • 240:$10.1500
IPW60R031CFD7XKSA1
DISTI # IPW60R031CFD7XKSA1		Infineon Technologies AGCoolMOS CFD7 Power Transistor High Power 31mΩ 278W 600V PG-TO 247-3 - Bulk (Alt: IPW60R031CFD7XKSA1)
Min Qty: 45
Container: Bulk		Americas - 0
  • 450:$7.0900
  • 225:$7.1900
  • 135:$7.4900
  • 90:$7.7900
  • 45:$7.9900
IPW60R031CFD7XKSA1
DISTI # IPW60R031CFD7XKSA1		Infineon Technologies AGCoolMOS CFD7 Power Transistor High Power 31mΩ 278W 600V PG-TO 247-3 - Rail/Tube (Alt: IPW60R031CFD7XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$7.7900
  • 1440:$7.8900
  • 960:$8.1900
  • 480:$8.4900
  • 240:$8.7900
IPW60R031CFD7XKSA1
DISTI # SP001617992		Infineon Technologies AGCoolMOS CFD7 Power Transistor High Power 31mΩ 278W 600V PG-TO 247-3 (Alt: SP001617992)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€6.7900
  • 500:€7.2900
  • 100:€7.4900
  • 50:€7.7900
  • 25:€8.0900
  • 10:€8.4900
  • 1:€9.1900
IPW60R031CFD7XKSA1
DISTI # 43AC9329		Infineon Technologies AGCoolMOS CFD7 Power Transistor High Power 31mΩ 278W 600V PG-TO 247-3 - Bulk (Alt: 43AC9329)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
    IPW60R031CFD7XKSA1
    DISTI # 43AC9329    		Infineon Technologies AGMOSFET, N-CH, 600V, 63A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:63A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.026ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes20
    • 500:$9.8900
    • 250:$10.5800
    • 100:$11.1200
    • 50:$11.8700
    • 25:$12.6200
    • 10:$13.1700
    • 1:$14.3200
    IPW60R031CFD7XKSA1
    DISTI # 726-IPW60R031CFD7XKS    		Infineon Technologies AGMOSFET HIGH POWER_NEW
    RoHS: Compliant    		1995
    • 1:$12.8900
    • 10:$11.8500
    • 25:$11.3600
    • 100:$10.0100
    • 250:$9.5200
    • 500:$8.9000
    IPW60R031CFD7XKSA1Infineon Technologies AGPower Field-Effect Transistor, 63A I(D), 600V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
    RoHS: Compliant    		1
    • 1000:$7.4000
    • 500:$7.7800
    • 100:$8.1000
    • 25:$8.4500
    • 1:$9.1000
    IPW60R031CFD7XKSA1
    DISTI # 2807984    		Infineon Technologies AGMOSFET, N-CH, 600V, 63A, TO-2471596
    • 100:£7.7200
    • 50:£8.2400
    • 10:£8.7600
    • 5:£9.9400
    • 1:£10.4500
    IPW60R031CFD7XKSA1
    DISTI # 2807984    		Infineon Technologies AGMOSFET, N-CH, 600V, 63A, TO-247
    RoHS: Compliant    		1338
    • 720:$14.1000
    • 240:$15.8500
    • 25:$17.9900
    • 10:$18.7600
    • 1:$20.4000
    Imagen Parte # Descripción
    INA194AIDBVT

    Mfr.#: INA194AIDBVT

    OMO.#: OMO-INA194AIDBVT

    		 Current & Power Monitors & Regulators Vltg Out Hi-Sd Msmnt Current Shunt Mntr
    IRS2110PBF

    Mfr.#: IRS2110PBF

    OMO.#: OMO-IRS2110PBF

    		 Gate Drivers Hi&Lw Sd Drvr All HiVolt Pins 1 Sd
    STW24N60M6

    Mfr.#: STW24N60M6

    OMO.#: OMO-STW24N60M6

    		 MOSFET N-channel 600 V, 105 mOhm typ., 22 A MDmesh M6 Power MOSFET in a TO-247 package
    STF26N60DM6

    Mfr.#: STF26N60DM6

    OMO.#: OMO-STF26N60DM6

    		 MOSFET N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM6 Power MOSFET in TO-220FP package
    TSM60NB041PW C1G

    Mfr.#: TSM60NB041PW C1G

    OMO.#: OMO-TSM60NB041PW-C1G

    		 MOSFET MOSFET, Single, N-Ch SJ G2, 600V, 78A
    INA194AIDBVT

    Mfr.#: INA194AIDBVT

    OMO.#: OMO-INA194AIDBVT-TEXAS-INSTRUMENTS

    		 Current & Power Monitors & Regulators Vltg Out Hi-Sd Msmnt Current Shunt Mnt
    IRS2110PBF

    Mfr.#: IRS2110PBF

    OMO.#: OMO-IRS2110PBF-INFINEON-TECHNOLOGIES

    		 Gate Drivers Hi&Lw Sd Drvr All HiVolt Pins 1 Sd
    NUCLEO-L476RG

    Mfr.#: NUCLEO-L476RG

    OMO.#: OMO-NUCLEO-L476RG-STMICROELECTRONICS

    		 STM32L476RGT6 Microcontroller Development Board 512KB Flash Win 7/Win 8/Win Vista/Win XP OS
    5018

    Mfr.#: 5018

    OMO.#: OMO-5018-KEYSTONE-ELECTRONICS

    		 SM TEST POINT - COMPACT
    Disponibilidad
    Valores:
    Available
    En orden:
    1985
    Ingrese la cantidad:
    El precio actual de IPW60R031CFD7XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    12,89 US$
    12,89 US$
    10
    11,85 US$
    118,50 US$
    25
    11,36 US$
    284,00 US$
    100
    10,01 US$
    1 001,00 US$
    250
    9,52 US$
    2 380,00 US$
    500
    8,90 US$
    4 450,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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