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FDB86102LZ

FDB86102LZ
Mfr. #:
FDB86102LZ
Fabricante:
ON Semiconductor
Descripción:
Darlington Transistors MOSFET 100V NCHAN PwrTrench
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDB86102LZ Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
FDB86102LZ más información
Atributo del producto
Valor de atributo
Fabricante
FAIRCHILD
categoria de producto
FET - Single
embalaje
Carrete
Unidad de peso
0.046296 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
TO-252-3
Tecnología
Si
Número de canales
1 Channel
Tipo transistor
1 N-Channel
Disipación de potencia Pd
3.1 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Id-corriente-de-drenaje-continua
8.3 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Resistencia a la fuente de desagüe de Rds
24 mOhms
Polaridad del transistor
Canal N
Tags
FDB86, FDB8, FDB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 100V 8.3A 3-Pin(2+Tab) D2PAK T/R
***Semiconductor
N-Channel PowerTrench® MOSFET, 100V, 30A, 24mΩ
***Components
MOSFET N-CHANNEL 100V 8.3A D2PAK
***i-Key
MOSFET N-CH 100V 30A D2PAK
***ark
MOSFET, N CH, 100V, 30A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; No. of Pins:3 ;RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.
***ment14 APAC
MOSFET, N CH, 100V, 30A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Parte # Mfg. Descripción Valores Precio
FDB86102LZ
DISTI # V72:2272_06337738		ON SemiconductorPT5 100V/20V N-CHANNEL POWERTR1600
  • 1000:$0.6390
  • 500:$0.8078
  • 250:$0.9162
  • 100:$0.9259
  • 25:$1.1943
  • 10:$1.2074
  • 1:$1.4081
FDB86102LZ
DISTI # FDB86102LZCT-ND		ON SemiconductorMOSFET N-CH 100V 30A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		692In Stock
  • 100:$1.2769
  • 10:$1.6160
  • 1:$1.8200
FDB86102LZ
DISTI # FDB86102LZDKR-ND		ON SemiconductorMOSFET N-CH 100V 30A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		692In Stock
  • 100:$1.2769
  • 10:$1.6160
  • 1:$1.8200
FDB86102LZ
DISTI # FDB86102LZTR-ND		ON SemiconductorMOSFET N-CH 100V 30A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 800:$0.8400
FDB86102LZ
DISTI # 30316637		ON SemiconductorPT5 100V/20V N-CHANNEL POWERTR1600
  • 1000:$0.6390
  • 500:$0.8078
  • 250:$0.9162
  • 100:$0.9259
  • 25:$1.1943
  • 11:$1.2074
FDB86102LZ
DISTI # 24565805		ON SemiconductorPT5 100V/20V N-CHANNEL POWERTR800
  • 800:$0.6624
FDB86102LZ
DISTI # FDB86102LZ		ON SemiconductorTrans MOSFET N-CH 100V 8.3A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FDB86102LZ)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 800:$0.6009
  • 1600:$0.5969
  • 3200:$0.5889
  • 4800:$0.5819
  • 8000:$0.5669
FDB86102LZ
DISTI # 54T8315		ON SemiconductorFET 100V 24.0 MOHM D2PAK / REEL0
  • 1:$0.6980
  • 800:$0.6940
  • 2400:$0.6340
  • 9600:$0.6150
FDB86102LZ
DISTI # 512-FDB86102LZ		ON SemiconductorMOSFET 100V NCHAN PwrTrench
RoHS: Compliant		1260
  • 1:$1.5100
  • 10:$1.2900
  • 100:$0.9900
  • 500:$0.8750
  • 800:$0.6900
FDB86102LZ
DISTI # 7599469P		ON SemiconductorMOSFET N-CHANNEL 100V 8.3A D2PAK, RL38
  • 20:£0.8200
  • 40:£0.7250
  • 100:£0.6300
  • 500:£0.5700
FDB86102LZFairchild Semiconductor Corporation 800
    FDB86102LZ
    DISTI # 2083230    		ON SemiconductorMOSFET, N CH, 100V, 30A, TO-263
    RoHS: Compliant    		0
    • 5:£0.7200
    • 25:£0.6540
    • 100:£0.4990
    • 250:£0.4260
    • 500:£0.4250
    FDB86102LZ
    DISTI # C1S541901590541    		ON SemiconductorTrans MOSFET N-CH Si 100V 8.3A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		1600
    • 250:$0.9162
    • 100:$0.9259
    • 25:$1.1943
    • 10:$1.2074
    FDB86102LZ
    DISTI # C1S541901539674    		ON SemiconductorTrans MOSFET N-CH Si 100V 8.3A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		800
    • 800:$1.0500
    Imagen Parte # Descripción
    FDB86360-F085

    Mfr.#: FDB86360-F085

    OMO.#: OMO-FDB86360-F085

    		 MOSFET N-Channel Power Trench MOSFET
    FDB86102LZ

    Mfr.#: FDB86102LZ

    OMO.#: OMO-FDB86102LZ

    		 MOSFET 100V NCHAN PwrTrench
    FDB86363-F085

    Mfr.#: FDB86363-F085

    OMO.#: OMO-FDB86363-F085

    		 MOSFET N-Channel Power Trench MOSFET
    FDB86566-F085

    Mfr.#: FDB86566-F085

    OMO.#: OMO-FDB86566-F085

    		 MOSFET 60V N-channel LL PowerTrench MOSFET
    FDB86360

    Mfr.#: FDB86360

    OMO.#: OMO-FDB86360-1190

    		 Nuevo y original
    FDB86566-F085

    Mfr.#: FDB86566-F085

    OMO.#: OMO-FDB86566-F085-ON-SEMICONDUCTOR

    		 MOSFET N-CH 60V 110A D2PAK
    FDB86566_F085

    Mfr.#: FDB86566_F085

    OMO.#: OMO-FDB86566-F085-1190

    		 MV7 60V N-channel Logic Level PowerTrench MOSFET (Alt: FDB86566-F085)
    FDB86360-F085-CUT TAPE

    Mfr.#: FDB86360-F085-CUT TAPE

    OMO.#: OMO-FDB86360-F085-CUT-TAPE-1190

    		 Nuevo y original
    FDB86363-F085

    Mfr.#: FDB86363-F085

    OMO.#: OMO-FDB86363-F085-ON-SEMICONDUCTOR

    		 MOSFET N-CH 80V 110A TO263
    FDB86360-F085

    Mfr.#: FDB86360-F085

    OMO.#: OMO-FDB86360-F085-ON-SEMICONDUCTOR

    		 MOSFET N-CH 80V 110A TO263
    Disponibilidad
    Valores:
    Available
    En orden:
    4500
    Ingrese la cantidad:
    El precio actual de FDB86102LZ es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,85 US$
    0,85 US$
    10
    0,81 US$
    8,08 US$
    100
    0,77 US$
    76,53 US$
    500
    0,72 US$
    361,40 US$
    1000
    0,68 US$
    680,30 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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