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DMG4407SSS-13

DMG4407SSS-13
Mfr. #:
DMG4407SSS-13
Fabricante:
Diodes Incorporated
Descripción:
MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
DMG4407SSS-13 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
DMG4407SSS-13 DatasheetDMG4407SSS-13 Datasheet (P4-P6)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
D
categoria de producto
FET - Single
Serie
DMG4407
embalaje
Carrete
Unidad de peso
0.002610 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
SO-8
Tecnología
Si
Id-corriente-de-drenaje-continua
9.9 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Resistencia a la fuente de desagüe de Rds
17 mOhms
Polaridad del transistor
P-Channel
Tags
DMG4407, DMG440, DMG44, DMG4, DMG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single P-Channel 30 V 1.45 W 20.5 nC Silicon Surface Mount Mosfet - SOIC-8
***ical
Trans MOSFET P-CH 30V 9.9A Automotive 8-Pin SO T/R
***ark
Mosfet, P-Ch, 30V, 9.9A, Soic Rohs Compliant: Yes
***ment14 APAC
MOSFET, P-CH, 30V, 9.9A, SOIC;
***ure Electronics
Single N-Channel 30 V 2 W 12.5 nC Silicon Surface Mount Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 30V 10.3A Automotive 8-Pin SO T/R
***(Formerly Allied Electronics)
MOSFET; N Channel; MOS; Trans; 30V; 10.3A; SO8
***S
French Electronic Distributor since 1988
***ure Electronics
Mosfet Transistor, N Channel, 10 A, 30 V, 0.0092 Ohm, 10 V, 2 V
***ment14 APAC
MOSFET, N-CH, 30V, 10A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Source Voltage Vds:30V; On Resistance
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-DSO-8, RoHS
***nell
MOSFET, N-CH, 30V, 10A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0092ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 1.56W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***(Formerly Allied Electronics)
IRF8707TRPBF N-channel MOSFET Transistor, 11 A, 30 V, 8-Pin SOIC
***ure Electronics
Single N-Channel 30 V 17.5 mOhm 9.3 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH Si 30V 11A 8-Pin SOIC T/R / MOSFET N-CH 30V 11A 8-SOIC
***ark
N Channel Mosfet, 30V, 11A, Soic; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; On Resistance Rds(On):0.0119Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ure Electronics
Single P-Channel 30 V 13.3 mOhm 38 nC HEXFET® Power Mosfet - SOIC-8
***ark
MOSFET, P CH, -30V, 0.0133OHM, -9.2A, SOIC-8
***(Formerly Allied Electronics)
MOSFET, P-CHANNEL, -30V, -9.2A, 19.4 MOHM, 25VGS, SO-8
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ment14 APAC
MOSFET, P-CH, -30V, -9.2A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-9.2A; Source Voltage Vds:-30V; On Resistance
***ineon
Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
***roFlash
Power Field-Effect Transistor, 9.2A I(D), 30V, 0.0194ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, P-CH, -30V, -9.2A, SOIC; Transistor Polarity: P Channel; Continuous Drain Current Id: -9.2A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.0133ohm; Rds(on) Test Voltage Vgs: -20V; Threshold Voltage Vgs: -1.8V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ure Electronics
N-Channel 30 V 11.9 mOhm Surface Mount Schottky Diode Mosfet - SOIC-8
***ark
Mosfet,+Sch,n Channel,30V,11A,so8; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; On Resistance Rds(On):0.0085Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***nell
MOSFET,+SCH,N CH,30V,11A,SO8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 1.55W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 11A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Voltage Vgs Max: 20V
***et Europe
Trans MOSFET N-CH 30V 10.4A 8-Pin SO T/R
***i-Key
MOSFET N-CH 30V 10.4A 8SO
***ment14 APAC
MOSFET,+SCH,N CH,30V,11A,SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:10.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.55W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:10.4A; Power Dissipation Pd:1.55W; Voltage Vgs Max:12V
Parte # Mfg. Descripción Valores Precio
DMG4407SSS-13
DISTI # V72:2272_06697730		Zetex / Diodes IncTrans MOSFET P-CH 30V 9.9A Automotive 8-Pin SO T/R
RoHS: Compliant		1100
  • 75000:$0.1581
  • 30000:$0.1623
  • 15000:$0.1664
  • 6000:$0.1805
  • 3000:$0.1824
  • 1000:$0.2145
  • 500:$0.2776
  • 250:$0.2806
  • 100:$0.2836
  • 50:$0.4564
  • 25:$0.4615
  • 10:$0.4665
  • 1:$0.5611
DMG4407SSS-13
DISTI # DMG4407SSS-13DICT-ND		Diodes IncorporatedMOSFET P-CH 30V 9.9A 8-SO
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2485In Stock
  • 1000:$0.2648
  • 500:$0.3427
  • 100:$0.4674
  • 10:$0.6230
  • 1:$0.7400
DMG4407SSS-13
DISTI # DMG4407SSS-13DIDKR-ND		Diodes IncorporatedMOSFET P-CH 30V 9.9A 8-SO
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2485In Stock
  • 1000:$0.2648
  • 500:$0.3427
  • 100:$0.4674
  • 10:$0.6230
  • 1:$0.7400
DMG4407SSS-13
DISTI # DMG4407SSS-13DITR-ND		Diodes IncorporatedMOSFET P-CH 30V 9.9A 8-SO
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$0.2344
DMG4407SSS-13
DISTI # 25756449		Zetex / Diodes IncTrans MOSFET P-CH 30V 9.9A Automotive 8-Pin SO T/R
RoHS: Compliant		1100
  • 1000:$0.2145
  • 500:$0.2776
  • 250:$0.2806
  • 100:$0.2836
  • 50:$0.4564
  • 37:$0.4615
DMG4407SSS-13
DISTI # DMG4407SSS-13		Diodes IncorporatedTrans MOSFET P-CH 30V 9.9A 8-Pin SO T/R - Tape and Reel (Alt: DMG4407SSS-13)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.1699
  • 5000:$0.1619
  • 10000:$0.1539
  • 15000:$0.1469
  • 25000:$0.1439
DMG4407SSS-13
DISTI # 621-DMG4407SSS-13		Diodes IncorporatedMOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K
RoHS: Compliant		2620
  • 1:$0.6000
  • 10:$0.4970
  • 100:$0.3030
  • 1000:$0.2340
  • 2500:$0.2000
DMG4407SSS-13
DISTI # C1S205700543109		Diodes IncorporatedMOSFETs
RoHS: Compliant		1100
  • 100:$0.2836
  • 50:$0.4564
  • 25:$0.4615
  • 10:$0.4665
Imagen Parte # Descripción
DMG4406LSS

Mfr.#: DMG4406LSS

OMO.#: OMO-DMG4406LSS-1190

 Nuevo y original
DMG4406LSS-13-F

Mfr.#: DMG4406LSS-13-F

OMO.#: OMO-DMG4406LSS-13-F-1190

 Nuevo y original
DMG4406LSS-13F

Mfr.#: DMG4406LSS-13F

OMO.#: OMO-DMG4406LSS-13F-1190

 Nuevo y original
DMG4407SSS

Mfr.#: DMG4407SSS

OMO.#: OMO-DMG4407SSS-1190

 Nuevo y original
DMG4407SSS-13-F

Mfr.#: DMG4407SSS-13-F

OMO.#: OMO-DMG4407SSS-13-F-1190

 Nuevo y original
DMG4406LSS-13

Mfr.#: DMG4406LSS-13

OMO.#: OMO-DMG4406LSS-13-DIODES

 IGBT Transistors MOSFET N-Ch ENH 30V 11mOhm 10.3A 10V VGS
DMG4407SSS-13

Mfr.#: DMG4407SSS-13

OMO.#: OMO-DMG4407SSS-13-DIODES

 MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K
Disponibilidad
Valores:
Available
En orden:
5000
Ingrese la cantidad:
El precio actual de DMG4407SSS-13 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,22 US$
0,22 US$
10
0,21 US$
2,05 US$
100
0,19 US$
19,43 US$
500
0,18 US$
91,75 US$
1000
0,17 US$
172,70 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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