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FQA11N90C-F109

FQA11N90C-F109
Mfr. #:
FQA11N90C-F109
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 900V N-Ch Q-FET advance C-Series
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FQA11N90C-F109 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-3PN-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
900 V
Id - Corriente de drenaje continua:
11 A
Rds On - Resistencia de la fuente de drenaje:
1.4 Ohms
Vgs - Voltaje puerta-fuente:
30 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
300 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
QFET
Embalaje:
Tubo
Altura:
20.1 mm
Longitud:
16.2 mm
Serie:
FQA11N90C_F109
Tipo de transistor:
1 N-Channel
Ancho:
5 mm
Marca:
ON Semiconductor / Fairchild
Otoño:
85 ns
Tipo de producto:
MOSFET
Hora de levantarse:
130 ns
Cantidad de paquete de fábrica:
450
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
130 ns
Tiempo típico de retardo de encendido:
60 ns
Parte # Alias:
FQA11N90C_F109
Unidad de peso:
0.225789 oz
Tags
FQA11N90C-F, FQA11N90C, FQA11N, FQA11, FQA1, FQA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET Transistor, N Channel, 11 A, 900 V, 0.91 ohm, 10 V, 5 V
***Components
N-Channel MOSFET, 11 A, 900 V, 3-Pin TO-3PN ON Semiconductor FQA11N90C-F109
***Semiconductor
N-Channel Power MOSFET, QFET®, 900 V, 11.0 A, 1.1 Ω, TO-3P
***et Europe
Trans MOSFET N-CH 900V 11A 3-Pin(3+Tab) TO-3P(N) Rail
***p One Stop Global
Trans MOSFET N-CH 900V 11A 3-Pin(3+Tab) TO-3PN Tube
***ure Electronics
N-Channel 900 V 1.1 Ohm Through Hole Mosfet - TO-3P
***an P&S
900V,1.1Ω,11.0A,N-Ch QFET MOSFET
***inecomponents.com
900V N-Channel MOSFET
***i-Key
MOSFET N-CH 900V 11A TO-3P
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 900V, 11A, TO-3PN-3; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:900V; On Resistance Rds(on):0.91ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:300W; Transistor Case Style:TO-3PN; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2018)
***nell
MOSFET, CANALE N, 900V, 11A, TO-3PN-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:11A; Tensione Drain Source Vds:900V; Resistenza di Attivazione Rds(on):0.91ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:5V; Dissipazione di Potenza Pd:300W; Modello Case Transistor:TO-3PN; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)
Parte # Mfg. Descripción Valores Precio
FQA11N90C_F109
DISTI # 33111446		ON Semiconductor900V N-CHANNEL MOSFET QFET&#17805
  • 500:$1.5485
  • 250:$1.5910
  • 100:$1.6358
  • 50:$1.6832
  • 25:$1.7334
  • 7:$1.7868
FQA11N90C_F109
DISTI # V36:1790_06359081		ON Semiconductor900V N-CHANNEL MOSFET QFET&#170
  • 450000:$1.5820
  • 225000:$1.5870
  • 45000:$2.1510
  • 4500:$3.2820
  • 450:$3.4790
FQA11N90C_F109
DISTI # FQA11N90C-F109		ON SemiconductorTrans MOSFET N-CH 900V 11A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FQA11N90C-F109)
RoHS: Compliant
Min Qty: 450		Asia - 450
  • 22500:$1.7577
  • 11250:$1.7875
  • 4500:$1.8183
  • 2250:$1.8832
  • 1350:$1.9530
  • 900:$2.0281
  • 450:$2.1092
FQA11N90C_F109
DISTI # FQA11N90C-F109		ON SemiconductorTrans MOSFET N-CH 900V 11A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FQA11N90C-F109)
RoHS: Compliant
Min Qty: 1		Europe - 300
  • 1000:€1.2900
  • 500:€1.3900
  • 100:€1.4900
  • 25:€1.5900
  • 50:€1.5900
  • 10:€1.6900
  • 1:€1.8900
FQA11N90C_F109
DISTI # FQA11N90C-F109		ON SemiconductorTrans MOSFET N-CH 900V 11A 3-Pin(3+Tab) TO-3P(N) Rail - Bulk (Alt: FQA11N90C-F109)
Min Qty: 149
Container: Bulk		Americas - 0
  • 1490:$1.9900
  • 149:$2.0900
  • 298:$2.0900
  • 447:$2.0900
  • 745:$2.0900
FQA11N90C_F109
DISTI # FQA11N90C-F109		ON SemiconductorTrans MOSFET N-CH 900V 11A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FQA11N90C-F109)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 900:$1.5900
  • 1800:$1.5900
  • 2700:$1.5900
  • 4500:$1.5900
  • 450:$1.6900
FQA11N90C-F109
DISTI # 48AC1154		ON SemiconductorQFC 900V 1.1OHM TO3PN / TUBE0
  • 1000:$2.7000
  • 500:$2.8700
  • 250:$3.0800
  • 100:$3.3400
  • 1:$4.0600
FQA11N90C-F109
DISTI # 512-FQA11N90C_F109		ON SemiconductorMOSFET 900V N-Ch Q-FET advance C-Series
RoHS: Compliant		569
  • 1:$3.9300
  • 10:$3.3400
  • 100:$2.9000
  • 250:$2.7500
  • 500:$2.4700
FQA11N90C-F109ON SemiconductorPower Field-Effect Transistor, 11A I(D), 900V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Not Compliant		900
  • 1000:$1.9100
  • 500:$2.0100
  • 100:$2.0900
  • 25:$2.1800
  • 1:$2.3500
FQA11N90C-F109Fairchild Semiconductor CorporationPower Field-Effect Transistor, 11A I(D), 900V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Not Compliant		300
  • 1000:$1.9100
  • 500:$2.0100
  • 100:$2.0900
  • 25:$2.1800
  • 1:$2.3500
FQA11N90C-F109
DISTI # 6714890		ON SemiconductorMOSFET N-CHANNEL 900V 11A TO-3P(N), EA66
  • 15:£2.4600
  • 6:£2.5100
  • 1:£3.8500
FQA11N90C_F109
DISTI # FQA11N90C-F109		ON SemiconductorTransistor: N-MOSFET,unipolar,900V,6.9A,300W,TO3PN120
  • 30:$2.3700
  • 10:$2.6400
  • 3:$3.2900
  • 1:$3.8100
FQA11N90C-F109ON Semiconductor900V,1.1,11.0A,N-Ch QFET MOSFET450
  • 1:$5.0300
  • 100:$3.2100
  • 500:$2.6500
  • 1000:$2.4400
FQA11N90C-F109
DISTI # 2453882		ON SemiconductorMOSFET, N-CH, 900V, 11A, TO-3PN-3
RoHS: Compliant		0
  • 500:$3.8000
  • 250:$4.2300
  • 100:$4.4600
  • 10:$5.1400
  • 1:$6.0400
FQA11N90C-F109
DISTI # XSKDRABV0037738		ON SEMICONDUCTOR 
RoHS: Compliant		360 in Stock0 on Order
  • 360:$2.2400
  • 208:$2.4000
FQA11N90C-F109
DISTI # XSFP00000101402		Fairchild Semiconductor CorporationLowSkewClockDriver,2DLSeries,4TrueOutput(s),0InvertedOutput(s),PDSO20
RoHS: Compliant		120 in Stock0 on Order
  • 120:$2.4000
  • 60:$2.5700
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Disponibilidad
Valores:
235
En orden:
2218
Ingrese la cantidad:
El precio actual de FQA11N90C-F109 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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