CSD19534Q5A

Mfr. #:: CSD19534Q5A
Descripción:: MOSFET N-Channel MOSFET
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: CSD19534Q5A Ficha de datos
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Más información:: CSD19534Q5A más información CSD19534Q5A Product Details

Atributo del producto
Valor de atributo

Fabricante:: Instrumentos Texas

Categoria de producto:: MOSFET

RoHS:: E

Tecnología:: Si

Estilo de montaje:: SMD / SMT

Paquete / Caja:: VSONP-8

Número de canales:: 1 Channel

Polaridad del transistor:: Canal N

Vds - Voltaje de ruptura de drenaje-fuente:: 100 V

Id - Corriente de drenaje continua:: 50 A

Rds On - Resistencia de la fuente de drenaje:: 15.1 mOhms

Vgs th - Voltaje umbral puerta-fuente:: 2.4 V

Vgs - Voltaje puerta-fuente:: 10 V

Qg - Carga de puerta:: 17 nC

Temperatura mínima de funcionamiento:: - 55 C

Temperatura máxima de funcionamiento:: + 150 C

Pd - Disipación de energía:: 63 W

Configuración:: Único

Modo de canal:: Mejora

Nombre comercial:: NexFET

Embalaje:: Carrete

Altura:: 1 mm

Longitud:: 6 mm

Serie:: CSD19534Q5A

Tipo de transistor:: 1 N-Channel

Ancho:: 4.9 mm

Marca:: Instrumentos Texas

Transconductancia directa - Mín .:: 47 S

Otoño:: 6 ns

Tipo de producto:: MOSFET

Hora de levantarse:: 14 ns

Cantidad de paquete de fábrica:: 2500

Subcategoría:: MOSFET

Tiempo de retardo de apagado típico:: 20 ns

Tiempo típico de retardo de encendido:: 9 ns

Unidad de peso:: 0.008818 oz

Tags: CSD19534, CSD1953, CSD19, CSD1, CSD

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

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CSD19534Q5A Descripción

***as Instruments: 100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 15.1 mOhm 8-VSONP -55 to 150

*** Electronics: CSD19534Q5A Texas Instruments MOSFET N-Channel 100V 50A 8-VSONP RoHS

***p One Stop: Trans MOSFET N-CH Si 100V 50A 8-Pin VSONP EP T/R

*** Stop Electro: Power Field-Effect Transistor, 10A I(D), 100V, 0.0176ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

*** Source Electronics: 100V N-Channel NexFET Power MOSFETs

***DA Technology Co., Ltd.: Product Description Demo for Development.

***S: French Electronic Distributor since 1988

***ure Electronics: Single N-Channel 100 V 13.9 mOhm 54 nC HEXFET® Power Mosfet - TO-252-3

***ineon: Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive; Lighting LED

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***trelec: MOSFET Operating temperature: -55...+175 °C Housing type: TO-263 Polarity: N Variants: Enhancement mode Power dissipation: 143 W

***roFlash: Power Field-Effect Transistor, 56A I(D), 100V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***nell: MOSFET, N-CH, 100V, 63A, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 56A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0111ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 143W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C

*** Electronics: INFINEON IRFH5210TRPBF MOSFET Transistor, N Channel, 55 A, 100 V, 0.0126 ohm, 10 V, 4 VNew

***ure Electronics: Single N-Channel 100 V 14.9 mOhm 39 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a PQFN package, PG-TDSON-8, RoHS

*** Source Electronics: MOSFET N-CH 100V 10A 8-PQFN / Trans MOSFET N-CH 100V 10A 8-Pin PQFN EP T/R

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: PQFN-6 (2x2) Polarity: N Variants: Enhancement mode Power dissipation: 3.6 W

***ineon: Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:55A; On Resistance Rds(On):0.0126Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes

***nell: MOSFET, N-CH, 100V, 55A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 55A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0126ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 104W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ure Electronics: Single N-Channel 100 V 10.9 mOhm 26 nC OptiMOS Power Mosfet - TDSON-8

***nell: MOSFET, N CH, 100V, 63A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 63A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0098ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.7V;

***ineon SCT: Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS

***ineon: The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***ical: Trans MOSFET N-CH 100V 52.5A Automotive 3-Pin(2+Tab) DPAK T/R

***des Inc SCT: 100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET, 100 V, RoHS

***et: MOSFET BVDSS: 61V~100V TO252 T&R 2.5K

***icroelectronics: N-channel 100 V, 0.015 Ohm, 60 A, STripFET(TM) DeepGATE(TM) Power MOSFET in DPAK

***ure Electronics: N-Channel 100 V 0.0195 Ohm Surface Mount STripFET Power MosFet - TO-252-3

***nell: MOSFET, N-CH, 100V, 60A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.015ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 125W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: STripFET DeepGATE Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (12-Jan-2017)

***r Electronics: Power Field-Effect Transistor, 60A I(D), 100V, 0.0195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***des Inc SCT: 100V N-CHANNEL ENHANCEMENT MODE MOSFET, 100 V, RoHS

***ical: Trans MOSFET N-CH 100V 10A 8-Pin PowerDI EP T/R

***ark: Mosfet Bvdss: 61V~100V Powerdi3333-8 T&r 2K

***ure Electronics: MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W

***nell: MOSFET, AEC-Q101, N-CH, 42A, 100V; Transistor Polarity: N Channel; Drain Source Voltage Vds: 100V; Continuous Drain Current Id: 42A; On Resistance Rds(on): 0.0108ohm; Transistor Mounting: Surface Mount; Rds(on) Test Voltage Vgs: 10V

***AS INST: This 100 V, 12.6 mΩ, SON 5 mm × 6mm NexFET power MOSFET is designed to minimize losses in power conversion applications.

CSD19534Q5A Más información

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

Parte #	Descripción	Valores	Precio
CSD19534Q5A DISTI # V98:2334_07248860	Trans MOSFET N-CH Si 100V 50A 8-Pin VSONP EP T/R RoHS: Compliant	2295	1000:$0.4381 500:$0.5475 250:$0.6140 100:$0.6145 25:$0.7825 10:$0.7835 1:$0.9123
CSD19534Q5AT DISTI # V39:1801_07248861	Trans MOSFET N-CH Si 100V 50A 8-Pin VSONP EP T/R RoHS: Compliant	750	1250:$0.4560 750:$0.5460 500:$0.5554 250:$0.6153
CSD19534Q5A DISTI # 296-43636-1-ND	MOSFET N-CH 100V 50 8SON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	12648In Stock	1000:$0.5048 500:$0.6394 100:$0.8244 10:$1.0430 1:$1.1800
CSD19534Q5A DISTI # 296-43636-6-ND	MOSFET N-CH 100V 50 8SON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	12648In Stock	1000:$0.5048 500:$0.6394 100:$0.8244 10:$1.0430 1:$1.1800
CSD19534Q5AT DISTI # 296-37838-1-ND	MOSFET N-CH 100V 50 8SON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	10557In Stock	100:$0.8910 10:$1.1270 1:$1.2700
CSD19534Q5AT DISTI # 296-37838-6-ND	MOSFET N-CH 100V 50 8SON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	10557In Stock	100:$0.8910 10:$1.1270 1:$1.2700
CSD19534Q5AT DISTI # 296-37838-2-ND	MOSFET N-CH 100V 50 8SON RoHS: Compliant Min Qty: 250 Container: Tape & Reel (TR)	10250In Stock	1250:$0.5296 750:$0.5861 500:$0.6709 250:$0.7592
CSD19534Q5A DISTI # 296-43636-2-ND	MOSFET N-CH 100V 50 8SON RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	10000In Stock	5000:$0.4345 2500:$0.4574
CSD19534Q5A DISTI # 31003752	Trans MOSFET N-CH Si 100V 50A 8-Pin VSONP EP T/R RoHS: Compliant	2295	1000:$0.4381 500:$0.5475 250:$0.6140 100:$0.6145 25:$0.7825 17:$0.7835
CSD19534Q5AT DISTI # 31016164	Trans MOSFET N-CH Si 100V 50A 8-Pin VSONP EP T/R RoHS: Compliant	750	750:$0.5460 500:$0.5554 250:$0.6153
CSD19534Q5AT DISTI # 30605789	Trans MOSFET N-CH Si 100V 50A 8-Pin VSONP EP T/R RoHS: Compliant	304	200:$0.9320 100:$0.9626 50:$1.0251 19:$1.2342
CSD19534Q5AT DISTI # CSD19534Q5AT	Trans MOSFET N-CH 100V 50A 8-Pin SON T/R (Alt: CSD19534Q5AT) RoHS: Compliant Min Qty: 250 Container: Tape and Reel	Europe - 750	250:€0.6379 500:€0.5219 1000:€0.4789 1500:€0.4099 2500:€0.3829
CSD19534Q5A DISTI # CSD19534Q5A	Trans MOSFET N-CH 100V 50A 8-Pin VSON T/R - Tape and Reel (Alt: CSD19534Q5A) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.4309 5000:$0.4099 10000:$0.3959 15000:$0.3829 25000:$0.3719
CSD19534Q5A DISTI # CSD19534Q5A	Trans MOSFET N-CH 100V 50A 8-Pin VSON T/R (Alt: CSD19534Q5A) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
CSD19534Q5A DISTI # CSD19534Q5A	Trans MOSFET N-CH 100V 50A 8-Pin VSON T/R (Alt: CSD19534Q5A) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.5909 5000:€0.4829 10000:€0.4429 15000:€0.3799 25000:€0.3539
CSD19534Q5AT DISTI # CSD19534Q5AT	Trans MOSFET N-CH 100V 50A 8-Pin SON T/R (Alt: CSD19534Q5AT) RoHS: Compliant Min Qty: 250 Container: Tape and Reel	Asia - 0
CSD19534Q5AT DISTI # CSD19534Q5AT	Trans MOSFET N-CH 100V 50A 8-Pin SON T/R - Tape and Reel (Alt: CSD19534Q5AT) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$0.4649 1500:$0.4429 2500:$0.4279 5000:$0.4139 10000:$0.4019
CSD19534Q5AT DISTI # 68X2367	MOSFET Transistor, N Channel, 50 A, 100 V, 0.0126 ohm, 10 V, 2.8 V , RoHS Compliant: Yes	0	1:$1.0500 10:$0.9000 25:$0.8300 50:$0.7610 100:$0.6910
CSD19534Q5A	100V, N-Channel NexFET Power MOSFET	4731	1000:$0.3400 750:$0.3700 500:$0.4500 250:$0.5400 100:$0.5800 25:$0.6700 10:$0.7200 1:$0.8000
CSD19534Q5AT	100V, N-Channel NexFET Power MOSFET	3720	1000:$0.3700 750:$0.4000 500:$0.4900 250:$0.5800 100:$0.6300 25:$0.7200 10:$0.7700 1:$0.8600
CSD19534Q5AT DISTI # 595-CSD19534Q5AT	MOSFET 100V, NCh NexFET RoHS: Compliant	2907	1:$1.0500 10:$0.9000 100:$0.6910
CSD19534Q5A DISTI # 595-CSD19534Q5A	MOSFET N-Channel MOSFET RoHS: Compliant	337	1:$0.9800 10:$0.8300 100:$0.6390 500:$0.5650 1000:$0.4460 2500:$0.3950 10000:$0.3810
CSD19534Q5AT DISTI # CSD19534Q5AT	Transistor: N-MOSFET,unipolar,100V,50A,63W,VSONP8 5x6mm	79	1:$0.9900 3:$0.8900 10:$0.7800 50:$0.7100 250:$0.6600
CSD19534Q5A DISTI # C1S746204073988	Trans MOSFET N-CH Si 100V 50A 8-Pin VSONP EP T/R RoHS: Compliant	2295	250:$0.6140 100:$0.6145 25:$0.7825 10:$0.7835
CSD19534Q5AT DISTI # C1S746203412269	Trans MOSFET N-CH Si 100V 50A 8-Pin VSONP EP T/R RoHS: Compliant	304	250:$0.7050 200:$0.7310 100:$0.7550 50:$0.8040 10:$0.9680 5:$1.0700
CSD19534Q5AT DISTI # C1S746203705497	Trans MOSFET N-CH Si 100V 50A 8-Pin VSONP EP T/R RoHS: Compliant	750	750:$0.5460 500:$0.5554 250:$0.6153
CSD19534Q5AT DISTI # 2430181	MOSFET, N-CHANNEL, 100V, 50A, VSON-8 RoHS: Compliant	4932	5:£0.7600 25:£0.6810 100:£0.5220 250:£0.4960 500:£0.4700

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Disponibilidad

Valores:: 18
En orden:: 2001
Ingrese la cantidad:

El precio actual de CSD19534Q5A es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~1,05 US$~~; ~~1,05 US$~~

10: ~~0,89 US$~~; ~~8,90 US$~~

100: ~~0,68 US$~~; ~~68,50 US$~~

500: ~~0,61 US$~~; ~~303,00 US$~~

1000: ~~0,48 US$~~; ~~478,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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CSD19534Q5A

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes