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SI4446DY-T1-E3

SI4446DY-T1-E3
Mfr. #:
SI4446DY-T1-E3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET RECOMMENDED ALT 781-SI4840BDY-GE3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4446DY-T1-E3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4446DY-T1-E3 DatasheetSI4446DY-T1-E3 Datasheet (P4-P6)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
E
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SO-8
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Altura:
1.75 mm
Longitud:
4.9 mm
Serie:
SI4
Ancho:
3.9 mm
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Parte # Alias:
SI4446DY-E3
Unidad de peso:
0.006596 oz
Tags
SI444, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
MOSFET N-CH 40V 3.9A 8-SOIC / Trans MOSFET N-CH 40V 3.9A 8-Pin SOIC N T/R
*** Electronics
VISHAY SILICONIX SI4446DY-T1-E3 MOSFET Transistor, N Channel, 3.9 A, 40 V, 0.033 ohm, 10 V, 1.6 V
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:5200mA; Drain Source Voltage, Vds:40V; On Resistance, Rds(on):0.045ohm; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:1.6V; Power Dissipation, Pd:1.1W ;RoHS Compliant: Yes
***nell
MOSFET, N CH, 40V, 3.9A, POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.033ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.1W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-55°C to +150°C
Parte # Mfg. Descripción Valores Precio
SI4446DY-T1-E3
DISTI # V36:1790_14141982		Vishay IntertechnologiesTrans MOSFET N-CH 40V 3.9A 8-Pin SOIC N T/R
RoHS: Compliant		0
    SI4446DY-T1-E3
    DISTI # SI4446DY-T1-E3TR-ND    		Vishay SiliconixMOSFET N-CH 40V 3.9A 8-SOIC
    Min Qty: 2500
    Container: Tape & Reel (TR)    		Limited Supply - Call
      SI4446DY-T1-E3
      DISTI # SI4446DY-T1-E3CT-ND      		Vishay SiliconixMOSFET N-CH 40V 3.9A 8-SOIC
      Min Qty: 1
      Container: Cut Tape (CT)      		Limited Supply - Call
        SI4446DY-T1-E3
        DISTI # SI4446DY-T1-E3DKR-ND        		Vishay SiliconixMOSFET N-CH 40V 3.9A 8-SOIC
        Min Qty: 1
        Container: Digi-Reel®        		Limited Supply - Call
          Imagen Parte # Descripción
          SI4446DY-T1-E3

          Mfr.#: SI4446DY-T1-E3

          OMO.#: OMO-SI4446DY-T1-E3

          		 MOSFET RECOMMENDED ALT 781-SI4840BDY-GE3
          SI4446DY-T1-E3

          Mfr.#: SI4446DY-T1-E3

          OMO.#: OMO-SI4446DY-T1-E3-VISHAY

          		 MOSFET N-CH 40V 3.9A 8-SOIC
          SI4446DY-T1-GE3

          Mfr.#: SI4446DY-T1-GE3

          OMO.#: OMO-SI4446DY-T1-GE3-VISHAY

          		 MOSFET N-CH 40V 3.9A 8-SOIC
          Disponibilidad
          Valores:
          Available
          En orden:
          5500
          Ingrese la cantidad:
          El precio actual de SI4446DY-T1-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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