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NTP8G206NG

NTP8G206NG
Mfr. #:
NTP8G206NG
Fabricante:
ON Semiconductor
Descripción:
MOSFET GAN 600V 17A 150MO
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NTP8G206NG Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NTP8G206NG DatasheetNTP8G206NG Datasheet (P4-P6)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
GaN
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
17 A
Rds On - Resistencia de la fuente de drenaje:
340 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1.6 V
Vgs - Voltaje puerta-fuente:
18 V
Qg - Carga de puerta:
6.2 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
96 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Marca:
EN Semiconductor
Otoño:
4 ns
Tipo de producto:
MOSFET
Hora de levantarse:
4.5 ns
Cantidad de paquete de fábrica:
50
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
9.7 ns
Tiempo típico de retardo de encendido:
6.2 ns
Unidad de peso:
0.211644 oz
Tags
NTP8, NTP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH GaN 600V 17A 3-Pin(3+Tab) TO-220 Tube
***emi
Power GaN Cascode 600V 150 mOhm Single N-Channel TO-220
***nell
MOSFET, N-CH, 600V, 17A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.15ohm; Rds(on) Test Voltage Vgs: 8V; Threshold Voltage Vgs: 2.1V; Power Dissipation Pd: 96W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018)
***p One Stop Global
Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-220 Full-Pak
***ure Electronics
E Series N Channel 650 V 0.18 O 86 nC Flange Mount Power Mosfet - TO-220FP
***nell
MOSFET, N-CH, 600V, 12A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:35W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; MSL:MSL 1 - Unlimited
***ical
Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-220 Full-Pak
***ure Electronics
E-Series N-Channel 600 V 0.18 O 86 nC Flange Mount Power Mosfet - TO-220FP
***nell
MOSFET, N CH, 600V, 21A, TO-220 FULLPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:227W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
***emi
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 20.6 A, 190 mΩ, TO-220F
***et Europe
Trans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220F Rail
*** Stop Electro
Power Field-Effect Transistor, 20.6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET, N-CH, 600V, 20.6A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:20.6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:39W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***emi
N-Channel Power MOSFET, SUPERFET® II, FAST, 600V, 20.2A, 199mΩ, TO-220F
***ical
Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-220FP Rail
***r Electronics
Power Field-Effect Transistor, 20.2A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N-CH, 600V, 20.2A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:20.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:39W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
***rchild Semiconductor
SuperFET®II MOSFET is Fairchild’s brand-new high voltage super-junction MOSFET family, utilizes advanced charge-balance technology for outstandingly low on-state resistance and lower gate charge. This advanced MOSFET is tailored not only to minimize conduction loss but also to achieve superior switching performance. Besides these advantages, it also provides extremely higher dv/dt rate and bigger avalanche energy than conventional super-junction MOSFETs. SuperFET II MOSFET is suitable for various switching power applications aiming for system miniaturization and higher efficiency.
***C
MOSFET N CHANNEL 600V 22A TO220 MOSFET N CHANNEL 600V 22A TO220
***et
Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220 Full-Pak
***ure Electronics
S-Series N-Channel 600 V 0.19 O 98 nC Flange Mount Power Mosfet - TO-220FP
***ment14 APAC
MOSFET, N CH, 600V, 22A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:600V; On Resistance Rds(on):160mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:22A; Power Dissipation Pd:250W; Voltage Vgs Max:20V
***emi
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 15 A, 260 mΩ, TO-220F
*** Stop Electro
Power Field-Effect Transistor, 15A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***el Electronic
FAIRCHILD SEMICONDUCTOR FCPF260N60E Power MOSFET, N Channel, 15 A, 600 V, 0.22 ohm, 10 V, 2.5 V
***ment14 APAC
MOSFET, N-CH, 600V, 15A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.22ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:36W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Parte # Mfg. Descripción Valores Precio
NTP8G206NG
DISTI # NTP8G206NGOS-ND		ON SemiconductorMOSFET N-CH 600V 17A TO220
RoHS: Compliant
Min Qty: 50
Container: Tube		Limited Supply - Call
    NTP8G206NG
    DISTI # 81Y7053    		ON SemiconductorMOSFET, N-CH, 600V, 17A, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:17A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.15ohm,Rds(on) Test Voltage Vgs:8V,Threshold Voltage Vgs:2.1V,Power RoHS Compliant: Yes0
      NTP8G206NG
      DISTI # 863-NTP8G206NG      		ON SemiconductorMOSFET GAN 600V 17A 150MO
      RoHS: Compliant      		0
      • 1:$28.4700
      • 5:$28.1800
      • 10:$26.2600
      • 25:$25.0800
      • 100:$22.4300
      • 250:$21.3900
      NTP8G206NG
      DISTI # 2493487      		ON SemiconductorMOSFET, N-CH, 600V, 17A, TO-220-3
      RoHS: Compliant      		30
      • 1:$45.0500
      • 5:$44.6000
      • 10:$41.5500
      • 25:$39.6900
      • 100:$35.4900
      • 250:$33.8500
      • 500:$32.2200
      NTP8G206NG
      DISTI # 2493487      		ON SemiconductorMOSFET, N-CH, 600V, 17A, TO-220-3
      RoHS: Compliant      		33
      • 1:£13.7900
      • 5:£13.7800
      • 10:£13.7700
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      Disponibilidad
      Valores:
      Available
      En orden:
      4000
      Ingrese la cantidad:
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