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FS215R04A1E3DBOMA1

FS215R04A1E3DBOMA1
Mfr. #:
FS215R04A1E3DBOMA1
Fabricante:
Infineon Technologies
Descripción:
IGBT Modules
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FS215R04A1E3DBOMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Módulos IGBT
RoHS:
Y
Embalaje:
Bandeja
Marca:
Infineon Technologies
Sensible a la humedad:
Yes
Tipo de producto:
Módulos IGBT
Cantidad de paquete de fábrica:
16
Subcategoría:
IGBT
Parte # Alias:
FS215R04A1E3D SP001002716
Tags
FS21, FS2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***or
FS215R04 - IGBT MODULE
***et
HYBRID PACK 1
***ineon
HybridPACK 1 with the ultra thin wafer 400Vces chipset is an automotive qualified power module designed for Hybrid Electric Vehicle (HEV) applications. The chipset is optimized for working voltages of 100V to about 250V and has lowest conduction and switching losses. It reduces the chip power losses up to 25% compared to the same chip size with latest 650Vces IGBT technology. | Summary of Features: Complete 3-phase Six-Pack with NTC in one compact module; High efficient 400Vces Ultra Thin Wafer Trench-Field-Stop IGBT3 with matching 400V Emitter Controlled 3 diode.; Increased diode current capability optimized for generator mode in hybrid electric vehicles; 25% reduced gate charge compared to IGBT3 650V reduces gate driver power losses; Enhanced wire bonding; Rugged Al 2O 3 ceramic for automotive applications with high thermal cycle requirements; Copper base plate for optimized cooling | Benefits: High efficient system approach for DCL voltages up to 200V; High reliability; Same mounting as HybridPACK1 modules with 650V chipset (modular approach) | Target Applications: hybrid; cav; drives
Parte # Mfg. Descripción Valores Precio
FS215R04A1E3DBOMA1
DISTI # FS215R04A1E3DBOMA1-ND		Infineon Technologies AGIGBT MODULES
RoHS: Compliant
Min Qty: 16
Container: Tray		Temporarily Out of Stock
  • 16:$263.4050
FS215R04A1E3DBOMA1
DISTI # FS215R04A1E3DBOMA1		Infineon Technologies AGHYBRID PACK 1 - Trays (Alt: FS215R04A1E3DBOMA1)
RoHS: Compliant
Min Qty: 16
Container: Tray		Americas - 0
    FS215R04A1E3DBOMA1
    DISTI # FS215R04A1E3DBOMA1    		Infineon Technologies AGHYBRID PACK 1 - Bulk (Alt: FS215R04A1E3DBOMA1)
    RoHS: Compliant
    Min Qty: 2
    Container: Bulk    		Americas - 0
    • 20:$222.8900
    • 10:$226.9900
    • 6:$234.8900
    • 4:$243.6900
    • 2:$252.7900
    FS215R04A1E3DBOMA1
    DISTI # 726-FS215R04A1E3DBOM    		Infineon Technologies AGIGBT Modules
    RoHS: Compliant    		0
    • 1:$280.8100
    • 5:$274.0600
    • 10:$267.2500
    • 25:$263.5100
    FS215R04A1E3DBOMA1Infineon Technologies AGInsulated Gate Bipolar Transistor
    RoHS: Not Compliant    		16
    • 1000:$230.9100
    • 500:$243.0600
    • 100:$253.0500
    • 25:$263.9000
    • 1:$284.1900
    Imagen Parte # Descripción
    FS215R04A1E3DBOMA1

    Mfr.#: FS215R04A1E3DBOMA1

    OMO.#: OMO-FS215R04A1E3DBOMA1

    		 IGBT Modules
    FS215R04A1E3D

    Mfr.#: FS215R04A1E3D

    OMO.#: OMO-FS215R04A1E3D-1190

    		 Nuevo y original
    FS215R04A1E3DBOMA1

    Mfr.#: FS215R04A1E3DBOMA1

    OMO.#: OMO-FS215R04A1E3DBOMA1-INFINEON-TECHNOLOGIES

    		 IGBT MODULES
    Disponibilidad
    Valores:
    Available
    En orden:
    3000
    Ingrese la cantidad:
    El precio actual de FS215R04A1E3DBOMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    280,81 US$
    280,81 US$
    5
    274,06 US$
    1 370,30 US$
    10
    267,25 US$
    2 672,50 US$
    25
    263,51 US$
    6 587,75 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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