STP16N65M5

STP16N65M5
Mfr. #:
STP16N65M5
Fabricante:
STMicroelectronics
Descripción:
MOSFET N-Ch 650 Volt 12 Amp
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STP16N65M5 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
STP16N65M5 más información STP16N65M5 Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
12 A
Rds On - Resistencia de la fuente de drenaje:
299 mOhms
Vgs - Voltaje puerta-fuente:
25 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
90 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
MDmesh
Embalaje:
Tubo
Altura:
9.15 mm
Longitud:
10.4 mm
Serie:
STP16N65M5
Tipo de transistor:
1 N-Channel
Ancho:
4.6 mm
Marca:
STMicroelectronics
Otoño:
7 ns
Tipo de producto:
MOSFET
Hora de levantarse:
9 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
30 ns
Tiempo típico de retardo de encendido:
25 ns
Unidad de peso:
0.011640 oz
Tags
STP16N65, STP16N6, STP16N, STP16, STP1, STP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 650 V, 0.230 Ohm, 12 A MDmesh(TM) V Power MOSFET in TO-220
***roFlash
Mosfet Transistor, N Channel, 12 A, 650 V, 0.23 Ohm, 10 V, 4 V Rohs Compliant: Yes
***ical
Trans MOSFET N-CH Si 650V 12A 3-Pin(3+Tab) TO-220AB Tube
***ark
MOSFET, N CH, 650V, 12A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 12A I(D), 650V, 0.279ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-channel 550 V, 0.150 Ohm typ., 16 A, MDmesh(TM) V Power MOSFET in TO-220 package
***ical
Trans MOSFET N-CH Si 550V 16A 3-Pin(3+Tab) TO-220AB Tube
***r Electronics
Power Field-Effect Transistor, 13A I(D), 550V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N CH, 550V, 13A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.18ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
***icroelectronics
N-channel 600 V, 0.27 Ohm typ., 14 A FDmesh II Power MOSFET in TO-220 package
***ure Electronics
N-Channel 600 V 0.299 Ohm Falnge Mount FDmesh™ II MosFet - TO-220
***ical
Trans MOSFET N-CH 600V 14A 3-Pin(3+Tab) TO-220AB Tube
***ponent Stockers USA
14 A 600 V 0.299 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***r Electronics
Power Field-Effect Transistor, 14A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N CH, 600V, 14A, TO 220; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.27ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 125W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
***icroelectronics
N-channel 500 V, 0.2 Ohm, 14 A MDmesh(TM) II Power MOSFET in TO-220
***ical
Trans MOSFET N-CH 500V 14A 3-Pin(3+Tab) TO-220AB Tube
***ark
MOSFET, N CH, 500V, 14A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; No. of Pins:3Pins RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 14A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***emi
N-Channel Power MOSFET, UniFETTM II, 600V, 10A, 750mΩ, TO-220
***Yang
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET,N CH,600V,10A,TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.64ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:185W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, QFET®, 500 V, 12.5 A, 430 mΩ, TO-220
***et
Trans MOSFET N-CH 500V 12.5A 3-Pin(3+Tab) TO-220AB Rail
***enic
500V 12.5A 430m´Î@10V6.25A 170W 5V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***ure Electronics
N-Channel 500 V 0.43 O Flange Muont Mosfet - TO-220
***r Electronics
Power Field-Effect Transistor, 12.5A I(D), 500V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):430mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:170W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Current Id Max:12.5A; On State Resistance Max:430mohm; Package / Case:TO-220; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:50A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
***emi
N-Channel Power MOSFET, UniFETTM II, 600 V, 12 A, 650 mΩ, TO-220
***ure Electronics
Single N-Channel 600 V 0.65 Ohm 34 nC 240 W DMOS Flange Mount Mosfet - TO-220-3
***Yang
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube
*** Stop Electro
Power Field-Effect Transistor, 12A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET,N CH,600V,12A,TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:240W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
STM MDmeshV Power MOSFETs - Thru-Hole
Parte # Mfg. Descripción Valores Precio
STP16N65M5
DISTI # 32903893
STMicroelectronicsTrans MOSFET N-CH Si 650V 12A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
1100
  • 9:$1.1993
STP16N65M5
DISTI # 497-8788-5-ND
STMicroelectronicsMOSFET N-CH 650V 12A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube
573In Stock
  • 2500:$2.2735
  • 500:$2.8376
  • 100:$3.3333
  • 50:$3.8462
  • 10:$4.0680
  • 1:$4.5300
STP16N65M5
DISTI # V36:1790_06564582
STMicroelectronicsTrans MOSFET N-CH Si 650V 12A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
0
  • 1000000:$1.8960
  • 500000:$1.9000
  • 100000:$2.3410
  • 10000:$3.1930
  • 1000:$3.3400
STP16N65M5
DISTI # STP16N65M5
STMicroelectronicsTrans MOSFET N-CH 650V 12A 3-Pin(3+Tab) TO-220 Tube (Alt: STP16N65M5)
RoHS: Compliant
Min Qty: 50
Container: Tube
Europe - 900
  • 1000:€1.7600
  • 500:€1.8900
  • 250:€2.0000
  • 100:€2.1300
  • 10:€2.2700
  • 1:€2.3900
STP16N65M5
DISTI # STP16N65M5
STMicroelectronicsTrans MOSFET N-CH 650V 12A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STP16N65M5)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 10000:$1.9900
  • 6000:$2.0900
  • 4000:$2.1900
  • 2000:$2.2900
  • 1000:$2.3900
STP16N65M5
DISTI # 94T3456
STMicroelectronicsMOSFET Transistor, N Channel, 12 A, 650 V, 0.23 ohm, 10 V, 4 V RoHS Compliant: Yes113
  • 1000:$2.5000
  • 500:$2.9200
  • 100:$3.3900
  • 10:$3.8800
  • 1:$4.5200
STP16N65M5
DISTI # 511-STP16N65M5
STMicroelectronicsMOSFET N-Ch 650 Volt 12 Amp
RoHS: Compliant
348
  • 1:$4.3100
  • 10:$3.6600
  • 100:$3.1700
  • 250:$3.0100
  • 500:$2.7000
  • 1000:$2.2800
  • 2000:$2.1600
STP16N65M5
DISTI # 6875298P
STMicroelectronicsMOSFET N-CHANNEL 650V 12A MDMESH TO220, TU28
  • 100:£2.3050
  • 50:£2.5400
  • 20:£2.5950
  • 10:£2.6550
STP16N65M5STMicroelectronics 217
  • 65:$3.6075
  • 18:$3.9000
  • 1:$5.8500
STP16N65M5
DISTI # STP16N65M5
STMicroelectronicsTransistor: N-MOSFET,unipolar,650V,7.3A,25W,TO220-389
  • 50:$1.7800
  • 10:$1.9700
  • 3:$2.4600
  • 1:$2.8600
STP16N65M5STMicroelectronics 
RoHS: Compliant
550
    STP16N65M5
    DISTI # STP16N65M5
    STMicroelectronicsN-Ch 650V 12A 90W 0,299R TO220
    RoHS: Compliant
    300
    • 10:€1.6500
    • 50:€1.3500
    • 200:€1.2000
    • 500:€1.1500
    STP16N65M5
    DISTI # TMOS1348
    STMicroelectronicsN-CH 650V 12A 279mOhm TO220
    RoHS: Compliant
    Stock DE - 0Stock HK - 0Stock US - 0
    • 50:$1.7300
    • 100:$1.6400
    • 150:$1.5400
    • 300:$1.4000
    • 450:$1.3400
    STP16N65M5
    DISTI # 2098296
    STMicroelectronicsMOSFET, N CH, 650V, 12A, TO 220
    RoHS: Compliant
    113
    • 5000:$3.1300
    • 2000:$3.2600
    • 1000:$3.4400
    • 500:$4.0700
    • 250:$4.5400
    • 100:$4.7800
    • 10:$5.5200
    • 1:$6.5000
    STP16N65M5
    DISTI # 2098296
    STMicroelectronicsMOSFET, N CH, 650V, 12A, TO 220111
    • 500:£1.8500
    • 250:£2.0700
    • 100:£2.1800
    • 10:£2.5200
    • 1:£3.3000
    STP16N65M5
    DISTI # XSKDRABS0035288
    STMicroelectronics 
    RoHS: Compliant
    700 in Stock0 on Order
    • 700:$1.6200
    • 400:$1.7300
    STP16N65M5
    DISTI # XSKDRABV0040334
    STMicroelectronicsLED Driver, 16-Segment, PDSO24
    RoHS: Compliant
    450 in Stock0 on Order
    • 450:$1.6800
    • 400:$1.8000
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    ADA4841-1YRJZ-R7

    Mfr.#: ADA4841-1YRJZ-R7

    OMO.#: OMO-ADA4841-1YRJZ-R7

    Operational Amplifiers - Op Amps Low Power Low Noise and Distort RRO
    L6566B

    Mfr.#: L6566B

    OMO.#: OMO-L6566B

    Power Factor Correction - PFC Multi Mode PWM Controller
    NSR1020MW2T1G

    Mfr.#: NSR1020MW2T1G

    OMO.#: OMO-NSR1020MW2T1G

    Schottky Diodes & Rectifiers SMALL SIG SCHOTTKY
    LM7805CT/NOPB

    Mfr.#: LM7805CT/NOPB

    OMO.#: OMO-LM7805CT-NOPB

    Linear Voltage Regulators 5 Volt Reg
    UCC25600DR

    Mfr.#: UCC25600DR

    OMO.#: OMO-UCC25600DR

    Switching Controllers LLC Half Bridge Resonant Cntrlr
    TPIC6595DWR

    Mfr.#: TPIC6595DWR

    OMO.#: OMO-TPIC6595DWR

    Counter Shift Registers 8bit Shift
    6224N

    Mfr.#: 6224N

    OMO.#: OMO-6224N

    DC Fans DC Tubeaxial Fan, 172x51mm Round, 24VDC, 241.3CFM, 55dBA, 18W, Ball Bearing, Terminals
    ADA4841-1YRJZ-R7

    Mfr.#: ADA4841-1YRJZ-R7

    OMO.#: OMO-ADA4841-1YRJZ-R7-ANALOG-DEVICES

    Nuevo y original
    1025HC50-RTR

    Mfr.#: 1025HC50-RTR

    OMO.#: OMO-1025HC50-RTR-EATON

    Fast-acting, high current, surface mount ceramic tube fuses
    49100SC

    Mfr.#: 49100SC

    OMO.#: OMO-49100SC-MURATA-POWER-SOLUTIONS

    Fixed Inductors 10uH 5.1A SMT
    Disponibilidad
    Valores:
    308
    En orden:
    2291
    Ingrese la cantidad:
    El precio actual de STP16N65M5 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    4,31 US$
    4,31 US$
    10
    3,66 US$
    36,60 US$
    100
    3,17 US$
    317,00 US$
    250
    3,01 US$
    752,50 US$
    500
    2,70 US$
    1 350,00 US$
    1000
    2,28 US$
    2 280,00 US$
    2000
    2,16 US$
    4 320,00 US$
    5000
    2,08 US$
    10 400,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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