SISS92DN-T1-GE3

Mfr. #:: SISS92DN-T1-GE3
Fabricante:: Vishay / Siliconix
Descripción:: MOSFET 250V Vds; +/-20V Vgs PowerPAK 1212-8S
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: SISS92DN-T1-GE3 Ficha de datos
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Más información:: SISS92DN-T1-GE3 más información

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Valor de atributo

Fabricante:: Vishay

Categoria de producto:: MOSFET

RoHS:: Y

Tecnología:: Si

Estilo de montaje:: SMD / SMT

Paquete / Caja:: PowerPAK-1212-8SH-8

Número de canales:: 1 Channel

Polaridad del transistor:: Canal N

Vds - Voltaje de ruptura de drenaje-fuente:: 250 V

Id - Corriente de drenaje continua:: 12.3 A

Rds On - Resistencia de la fuente de drenaje:: 173 mOhms

Vgs th - Voltaje umbral puerta-fuente:: 2 V

Vgs - Voltaje puerta-fuente:: 20 V

Qg - Carga de puerta:: 16 nC

Temperatura mínima de funcionamiento:: - 55 C

Temperatura máxima de funcionamiento:: + 150 C

Pd - Disipación de energía:: 65.8 W

Configuración:: Único

Modo de canal:: Mejora

Nombre comercial:: TrenchFET; PowerPAK

Embalaje:: Carrete

Tipo de transistor:: 1 N-Channel

Marca:: Vishay / Siliconix

Transconductancia directa - Mín .:: 12 S

Otoño:: 6 ns

Tipo de producto:: MOSFET

Hora de levantarse:: 4 ns

Cantidad de paquete de fábrica:: 3000

Subcategoría:: MOSFET

Tiempo de retardo de apagado típico:: 17 ns

Tiempo típico de retardo de encendido:: 10 ns

Tags: SISS9, SISS, SIS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SISS92DN-T1-GE3 Más información

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET Gen IV MOSFETs: Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
SISS92DN-T1-GE3 DISTI # V72:2272_22989550	Vishay Intertechnologies	SISS92DN-T1-GE3	5520	75000:$0.4588 30000:$0.4611 15000:$0.4633 6000:$0.4655 3000:$0.4677 1000:$0.4699 500:$0.5699 250:$0.6778 100:$0.7067 50:$0.8402 25:$0.9335 10:$1.0541 1:$1.3044
SISS92DN-T1-GE3 DISTI # SISS92DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 250V POWERPAK 1212 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5980In Stock	1000:$0.5597 500:$0.7089 100:$0.8582 10:$1.1010 1:$1.2300
SISS92DN-T1-GE3 DISTI # SISS92DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 250V POWERPAK 1212 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5980In Stock	1000:$0.5597 500:$0.7089 100:$0.8582 10:$1.1010 1:$1.2300
SISS92DN-T1-GE3 DISTI # SISS92DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 250V POWERPAK 1212 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	15000:$0.4637 6000:$0.4818 3000:$0.5071
SISS92DN-T1-GE3 DISTI # 32725040	Vishay Intertechnologies	SISS92DN-T1-GE3	5520	15000:$0.4633 6000:$0.4655 3000:$0.4677 1000:$0.4699 500:$0.5699 250:$0.6778 100:$0.7067 50:$0.8402 25:$0.9335 15:$1.0541
SISS92DN-T1-GE3 DISTI # SISS92DN-T1-GE3	Vishay Intertechnologies	Transistor MOSFET N-CH 250V 12.3A 8-Pin PowerPAK 1212-S T/R (Alt: SISS92DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.4609 18000:€0.4819 12000:€0.5449 6000:€0.6719 3000:€0.9369
SISS92DN-T1-GE3 DISTI # 99AC2832	Vishay Intertechnologies	MOSFET, N-CH, 250V, 12.3A, 150DEG C,Transistor Polarity:N Channel,Continuous Drain Current Id:12.3A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.14ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes	30	500:$0.6490 250:$0.7340 100:$0.8750 50:$0.9640 25:$1.0700 10:$1.1800 1:$1.2500
SISS92DN-T1-GE3 DISTI # 78-SISS92DN-T1-GE3	Vishay Intertechnologies	MOSFET 250V Vds,+/-20V Vgs PowerPAK 1212-8S RoHS: Compliant	5474	1:$1.2000 10:$0.9940 100:$0.7630 500:$0.6560 1000:$0.5180 3000:$0.4830 6000:$0.4590 9000:$0.4420
SISS92DN-T1-GE3 DISTI # 3019146	Vishay Intertechnologies	MOSFET, N-CH, 250V, 12.3A, 150DEG C	34	500:£0.5760 250:£0.6550 100:£0.7340 10:£0.9690 1:£1.1900
SISS92DN-T1-GE3 DISTI # 3019146	Vishay Intertechnologies	MOSFET, N-CH, 250V, 12.3A, 150DEG C RoHS: Compliant	30	1000:$0.6380 500:$0.7860 250:$0.8610 100:$0.9360 25:$1.2100 5:$1.3200

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Disponibilidad

Valores:: Available
En orden:: 1988
Ingrese la cantidad:

El precio actual de SISS92DN-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~1,20 US$~~; ~~1,20 US$~~

10: ~~0,99 US$~~; ~~9,94 US$~~

100: ~~0,76 US$~~; ~~76,30 US$~~

500: ~~0,66 US$~~; ~~328,00 US$~~

1000: ~~0,52 US$~~; ~~518,00 US$~~

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SISS92DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes